A Study on the Micro-lapping process of Sapphire Wafers for optoelectronic devices

광반도체용 사파이어웨이퍼 기계연마특성 연구

  • 황성원 (전북대학교 대학원 기계공학과) ;
  • 신귀수 (전북대학교 기계항공시스템공학부) ;
  • 김근주 (전북대학교 기계항공시스템공학부) ;
  • 서남섭 (전북대학교 기계항공시스템공학부)
  • Published : 2004.02.01

Abstract

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

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