• Journal of Ocean Engineering and Technology
• /
• v.23 no.2
• /
• pp.81-86
• /
• 2009

Infrared thermography was used to determine the location, size, and depth of defects under the surface of M.C nylon. Defects were created in a specimen by back-drilling circular holes. These defects were located at the maximum temperature difference that occurred. The sizes of the defects could be calculated by means of the full width at half of the maximum temperature difference. The depth of a defect could be calculated by the peak time and the maximum temperature difference. The maximum temperature difference between a defect and normal part was decreased with the depth of the defect. And the peak time also slowly appeared with the depth of the defect.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.2
• /
• pp.218-223
• /
• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.82-85
• /
• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• Bulletin of the Korean Chemical Society
• /
• v.22 no.8
• /
• pp.807-815
• /
• 2001

Two-dimensional (2D) correlation method, which generates the synchronous and the asynchronous 2D spectrum by complex cross correlation of the Fourier transformed spectra, is an analysis method for the changes of the sample spectrum induced by vari ous perturbations. In the present work, the 2D electronic correlation spectra have been simulated for the cases where the sample spectrum composed of two gaussian bands changes linearly. When only the band amplitudes of the sample spectrum change, the synchronous spectrum shows strong peaks at the band centers of the sample spectrum, but the asynchronous spectrum does not make peaks. When the sample spectrum shifts without changing intensity and width, the synchronous spectrum shows peaks around the initial and final positions of the band maximum and the asynchronous spectrum shows long peaks spanning the shifting range. The band width change produces the complex 2D correlation spectra. When the sample spectrum shifts with band broadening, the width change by 50% of full width at half maximum (FWHM) does not give so large an effect on the correlation spectrum as the spectral shift by one half of FWHM of the sample spectrum.

• Composites Research
• /
• v.34 no.3
• /
• pp.143-147
• /
• 2021

Full width half maximum (FWHM) analysis of superimposed terahertz (THz) signals in the glass fiber reinforced polymer (GFRP) was studied to detect fine delamination inside GFRP. The THz signals were measured for each fine delamination size inside the GFRP using the reflection mode of the terahertz time domain spectroscopy (THz-TDS) system. Then, the FWHM of the superimposed THz signal reflected at the fine delamination was extracted. Thereafter, the complex refractive index of the GFRP was measured using transmission mode of the THzTDS system. Based on this, the FWHM of the superimposed THz signal at the fine delamination were calculated and compared with respect to the fine delamination size. From the theoretically calculated superimposed signals, the relationship between the fine delamination size and the FWHM in the superimposed THz signal was derived. Consequently, the fine delamination size could be predicted through the analysis of the FWHM extracted from the THz signal at the fine delamination.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.3
• /
• pp.105-109
• /
• 2017

AlN single crystal was thermally treated at $1200^{\circ}C$ and $1500^{\circ}C$ in the ambient gas of nitrogen. AlN single crystal was obtained by sublimation growth process using by a facility having a growth part which was heated by RF (Radio Frequency) induction heating. In this report, the optical microscopic results taken from thermally treated AlN single crystal and FWHM (Full width of half maximum) measured by DCXRD (Double crystal X-ray Diffractometry) were reported.

• Current Optics and Photonics
• /
• v.7 no.2
• /
• pp.191-199
• /
• 2023

We propose a dual Fabry-Perot interferometer (DFPI) structure that combines two Fabry-Perot interferometers. The structure is designed to have spectral peaks in the red, green, and blue regions simultaneously, to be applicable to R, G, and B subpixels without any patterning process. The optimized structure has been fabricated on a glass substrate using a thermal evaporation technique. When the DFPI structure was attached to the quantum-dot color-conversion layer, the full width at half maximum values of the green and red spectra decreased by 47.29% and 51.07% respectively. According to CIE 1931 color space, the DFPI showed a 37.66% wider color gamut than the standard RGB color coordinate. Thus it was experimentally proven that the proposed DFPI structure improved color purity. This DFPI structure will be useful in realizing a display with high color purity.

• Journal of the Korean Vacuum Society
• /
• v.11 no.2
• /
• pp.97-102
• /
• 2002

Highly-oriented ZnO thin films has been successfully deposited on Si(100) by metal organic chemical vapor deposition(MOCVD) at $250^{\circ}C$~$400^{\circ}C$ We report on the structural properties of ZnO thin film at various temperatures and at various ratios of the he and $O_2$ gas flow rates. The crystallinity of the thin films was improved and the surface smoothness decreased with the increase of the growth temperature. In x-ray diffraction analysis with respect to ZnO(0002) peak, the full width at half maximum (FWHM) of $0.4^{\circ}$ was achieved at $400^{\circ}C$.

• Progress in Superconductivity and Cryogenics
• /
• v.5 no.3
• /
• pp.20-22
• /
• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• Korean Journal of Optics and Photonics
• /
• v.13 no.4
• /
• pp.319-323
• /
• 2002

1.55 ${\mu}m$multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factors ($\alpha{-factor}$) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width at half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes for which the value of the $\alpha{-factor}$ was small. As injection current increased, the FWHM of the far-field also increased regardless of the a-factor. This phenomenon was explained by reduction of filament spacing as injection current increased.