Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)
- 2003.05a
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- Pages.18-22
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- 2003
Dislocation densities of CMP processed sapphire wafers for GaN epitaxy
Abstract
The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by grinding, lapping and polishing. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. This mechanical stress and strain can be cured by thermal anneal ing process. The sapphire crystalline wafers were annealed at