• Title/Summary/Keyword: the YBCO thin films

Search Result 185, Processing Time 0.039 seconds

Design of the High-Temperature Superconducting Patch Array Antenna with Circular Polarization for DBS Receiver (위성방송 수신용 원형 편파 고온초전도 평판 배열 안테나)

  • 하재권;강광용;곽민환
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
    • /
    • 2001.02a
    • /
    • pp.142-144
    • /
    • 2001
  • We designed superconducting four-element patch array antenna which has single-feed circularly polarization and a resonance frequency of 11.85 GHz for DBS receiving system. Antennas have been fabricated from both gold conductor and $YBa_{2}$$Cu_{3}$$O_{7-x}$(YBCO) superconductor (thin films) for comparison. Simulated and measured results, and analysis on resonant frequency(fr), return loss, and bandwidth are presented.

  • PDF

Analysis of the Critical Characteristics in the Superconducting Strip Lines by ICP Etching System (ICP 식각 시스템에 의한 초전도 스트립 라인의 임계 특성 분석)

  • 고석철;강형곤;최효상;양성채;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.7
    • /
    • pp.782-787
    • /
    • 2004
  • Superconducting flux flow transistor (SFFT) is based on a control of the Abrikosov vortex flowing along a channel. The induced voltage by moving of the Abrikosov vortex in an SFFT is greatly affected by the thickness, the width, and the length of channel. In order to fabricate a reproducible channel in the SFFT, we studied the variation of the critical characteristics of ${YBa}_2{Cu}_3{O}_7-\delta(YBCO)$ thin films with the etching time using ICP (Inductively coupled plasma) system. From the simulation, it was certified that the vortex velocity was increased in a low pinning energy at channel width 0,5 mm. The surfaces of YBCO thin film were etched by ICP etching system. We observed the etched channel surfaces by AFM (Atomic Force Microscope) and measured the critical current density with etching time. As a measured results, the etching thickness of channel should be optimized to fabricated a flux flow transistor with specified characteristics.

Electrophoretic Deposition Technique by Vertical Lateral Assisted Field (측면수직보조전계에 의한 전기영동전착 기술)

  • Soh, Dae-Wha;Jeon, Yong-Woo;Park, Jeung-Cheul;Fan, Zhanguo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05b
    • /
    • pp.82-85
    • /
    • 2003
  • This dissertation describes an optimization method for fabricating thick films with superconducting YBCO powders by electrophoresis technique. The lateral alternating applied voltage caused to shake the superconducting powder vertically to the deposition field during the process of the oriented deposition so that it was deposited along the c-axis on the silver tape with shaky-aligned EPD. As the result, the optimized thin film fabrication method was obtained to get more dense and uniform surface morphology as well as the improved critical current density. For commercial utilization and efficiency, in this dissertation, alternating voltage of 25-120 V/cm in frequency of 60Hz was proposed to apply it as a subsidiary source for shaky-flow deposition so that the fabricated thin film showed uniform surface morphology with less voids and cracks and $T_{c.zero}$ of 90 K and the critical current density of $3419A/cm^2$.

  • PDF

Characterization of the Spiral Type Fault Current Limiters Using High-$T_c$ Superconducting Thin Films (나선형태로 제작된 고온초전도 한류기의 특성해석)

  • 정동철;박성진;강형곤;최효상;곽민환;임해용;황종선;최명호;추철원
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.6
    • /
    • pp.518-524
    • /
    • 2001
  • We report the current limiting properties of superconducting fault current limiters (SFCL). Our SFCL was patterned in a spiral type on a YB $a_2$C $u_3$$O_{7-x}$(YBCO) film deposited using rf sputtering techniques and was coated with a gold shunt layer in order to disperse the heat generated at hot spots in the YBCO film. Current increased up to 13.5 $A_{peak}$ at 60 Hz for the voltage of 13 $V_{peak}$, which is the minimum quench point, and increased up to 17.6 $A_{peak}$ at 60 Hz fo the voltage fo 141.4 $V_{peak}$. The quench completion time was 5 msec at 13 $V_{peak}$ and 4 msec at 141. $V_{peak}$ respectively. we think that this architecture using spiral-type SFCL can be useful for the protection of the power delivery systems from fault currents.s. currents.s.

  • PDF

Operating Characteristics of Superconducting Fault Current Limiters Connected in Series by Shunt Resistors (직렬연결된 초전도 한류기의 분로저항에 의한 동작특성)

  • Hyun, Ok-Bae;Choi, Hyo-Sang;Kim, Hye-Rim;Lim, Hae-Ryong;Kim, In-Seon
    • The Transactions of the Korean Institute of Electrical Engineers B
    • /
    • v.49 no.11
    • /
    • pp.737-741
    • /
    • 2000
  • We fabricated resistive superconducting fault current limiters (SFCL) based on YBCO thin films grown on 2-inch diameter $Al_2O_3$ substrates. Two SFCLs with nearly identical properties were connected in series to investigate simultaneous quench. There was a slight difference in the rate of voltage increase between two SFCL units when they were operated independently. This difference resulted in significantly imbalanced power dissipation between the units. This imbalance was removed by connecting a shunt resister to an SFCL in parallel. The appropriate values of shunt resistance were 80 ${\Omega}$ at 75 $V_rms$ and 110 ${\Omega}$ at 120 $V_rms$, respectively. Increased power input at high voltages also reduced the initial imbalance in power dissipation, but with increase in film temperature to higher than 200 K.

  • PDF

Fabrication and Characterization of Step-Edge Josephson Junctions on R-plane Al$_2O_3$ Substrates (R-면 사파이어 기판 위에 제작된 계단형 모서리 조셉슨 접합의 특성)

  • Lim, Hae-Ryong;Kim, In-Seon;Kim, Dong-Ho;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
    • /
    • v.9
    • /
    • pp.147-151
    • /
    • 1999
  • YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

  • PDF