• 제목/요약/키워드: the Far East

Search Result 1,251, Processing Time 0.025 seconds

Electrical Characteristics of 500V LIGBT for Intelligent Power ICs (인텔리전트 파워 IC용 500V급 LIGBT의 전기적 특성에 관한 연구)

  • Kang, Ey-Goo;Sul, Won-Ji;Seo, Hyun-Ju;Kim, Hyun-Mi;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.07a
    • /
    • pp.183-184
    • /
    • 2005
  • In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

  • PDF

The Optimal Design and Electrical Characteritics of 1,700 V Class Double Trench Gate Power MOSFET Based on SiC (1,700 V급 SiC 기반의 단일 및 이중 트렌치 게이트 전력 MOSFET의 최적 설계 및 전기적 특성 분석)

  • Ji Yeon Ryou;Dong Hyeon Kim;Dong Hyeon Lee;Ey Goo Kang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.36 no.4
    • /
    • pp.385-390
    • /
    • 2023
  • In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

First Record of the Subfamily Methochinae (Hymenoptera: Tiphiidae) from Korea

  • Kim, Jeong-Kyu;Han, Seung-Pil
    • Animal Systematics, Evolution and Diversity
    • /
    • v.26 no.1
    • /
    • pp.71-73
    • /
    • 2010
  • First discovery of Methocha articulata (Latreille) in Korea is reported. This species is transpalaearctic in distribution, and in the Far East only known from the Russian Far East so far. Diagnostic characters and digital images of this species are provided.

A Study on the Field Ring of High Voltage Characteristics Improve for the Power Semiconductor (전력반도체 고내압 특성 향상을 위한 필드링 최적화 연구)

  • Nam, Tae-Jin;Jung, Eun-Sik;Jung, Hun-Suk;Kim, Sung-Jong;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.3
    • /
    • pp.165-169
    • /
    • 2012
  • Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

A Study on High-voltage Low-power Power MOSFET of Optimization for Industrial Motor Drive (산업용 모터 구동을 위한 고내압 저전력 Power MOSFET 최적화 설계에 관한 연구)

  • Kim, Bum-June;Chung, Hun-Suk;Kim, Seong-Jong;Jung, Eun-Sik;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.3
    • /
    • pp.170-175
    • /
    • 2012
  • Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

Study on Industrial Inverters for Driving High-efficiency High-voltage Field-stop IGBT Optimization Design (산업용 인버터 구동을 위한 고효율 고내압 Field-stop IGBT 최적화 설계에 관한 연구)

  • Lee, Myung Hwan;Kim, Bum June;Jung, Eun Sik;Jung, Hun Suk;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.4
    • /
    • pp.257-263
    • /
    • 2013
  • In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

The Return Migration of Koreans in Central Asia to the Russian Far East (중앙아시아 고려인의 러시아 극동 지역 귀환 이주)

  • Lee, Chai-Mun;Park, Kyu-Taeg
    • Journal of the Korean association of regional geographers
    • /
    • v.9 no.4
    • /
    • pp.559-575
    • /
    • 2003
  • The purpose of this study is to systematically explain and discuss the return migration of Koreans in Central Asia to the Russian Far East. The Koreans' return migration is explained by the combination of push and pull factors inherent in the host and home countries. The structural or institutional push factors in Central Asia include the linguistic policy of a country, civil war, ethnic conflicts, while the micro ones are the Koreans' high concern of their children's education and the improvement of a socio-economic status. The macro pull factors operated in the Russian Far East are the permission to use the housing facilities and land previously controlled by military authorities and the laws of recovering the koreans' basic right and honor, while the micro ones are the networks of relatives and friends living in Central Asia and the Russian Far East. The two aspects related to the Koreans' return migration are also discussed. Firstly, the return migration of Koreans in Central Asia is interpreted as a migration of ethnic affinity. Secondly, the establishment of an autonomous district of Koreans in the Russian Far East is discussed.

  • PDF

Epiphytic Communities on Marine Plants of Seychelles, Indian Ocean, East Africa

  • Ivin, V.V.;Zvyagintsev, A.Yu.;Titlyanova, T.V.
    • Ocean and Polar Research
    • /
    • v.22 no.1
    • /
    • pp.37-43
    • /
    • 2000
  • Epiphytic communities on marine plants of Seychelles (Indian Ocean Island group associated with East Africa) were investigated in January - March of 1989 during the $15^{th}$ biological voyage of the research vessel cademic Alexander Nesmeyanov. A seagrass species, Thalassodendron ciliatum, and macroalgae (Sargassum spp. and Halimeda spp.) were tested for host substrates and biomass of their dominant epiphytes were assessed. Also, in order to understand the effect of shading and nutrient filtering by epiphytes, two series of photosynthetic rates were compared for Th. ciliatum host leaves having 10% and no epiphytes. Total of 84 species of algae and main taxons of benthic animals were identified from three different host plants. An average biomass of the epiphytes on Th. cihiatum was $184.6g\;kg^{-1}$ and dominant species were green alga Halimeda opuntia, red algae Dictyurus occidentalis and Gelidiella myrioclada. These dominant species and their biomass were remarkably varied with depth increment. On Sargassum spp., an average biomass of the epiphytes was $0.18g\;kg^{-1}$ and the maximum biomass was never exceeded $0.16g\;kg^{-1}$. In the case of Halimeda spp. an average biomass of the epiphytes was $8.0g\;kg^{-1}$, and dominant species were Peyssonnelia dubyi, sponges and decapods. Photosynthetic rates of Th. ciliatum were significantly reduced in the leaves having 10% epiphytes (1.72 times lower, t=6.718, p<0.001).

  • PDF