• Title/Summary/Keyword: tersoff potential

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Molecular Dynamics Simulation of Adhesive Friction of Silicon Asperity (실리콘 돌기의 응착마찰 분자동력학 시뮬레이션)

  • Park, Seung-Ho;Cho, Sung-San
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.5
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    • pp.547-553
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    • 2004
  • A hemispherical asperity moving over a flat plane is simulated based on classical molecular dynamics. The asperity and the plane consist of silicon atoms whose interactions are governed by the Tersoff three-body potential. The gap between the asperity and the plane is maintained to produce attractive normal force in order to investigate the adhesive friction and wear. The simulation focuses on the influence of crystallographic orientation of the contacting surfaces and the moving direction. It is demonstrated that the adhesive friction and wear are lower when crystallographic orientations of the contacting surfaces are different, and also depend on the moving direction relative to the crystal1ographic orientation.

Investigation of Amorphous Carbon Film Deposition by Molecular Dynamic Simulation (분자 동역학 전산모사에 의한 비정질 탄소 필름의 합성거동 연구)

  • 이승협;이승철;이규환;이광렬
    • Journal of the Korean Vacuum Society
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    • v.12 no.1
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    • pp.25-34
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    • 2003
  • Deposition behavior of hard amorphous carbon film was investigated by molecular dynamic simulation using Tersoff potential which was suggested for the interaction potential between carbon atoms. When high energy carbon atoms were collided on diamond (100) surface, dense amorphous carbon film could be obtained. Physical properties of the simulated carbon film were compared with those of the film deposited by filtered cathodic arc process. As in the experimental result, the most diamond-like film was obtained at an optimum kinetic energy of the incident carbon atoms. The optimum kinetic energy was 50 eV, which is comparable to the experimental observation. The simulated film was amorphous with short range order of diamond lattice. At the optimum kinetic energy condition, we found that significant amount of carbon atom were placed at a metastable site of distance 2.1 $\AA$. By melting and quenching simulation of diamond lattice, it was shown that this metastatic peak is Proportional to the quenching rate. These results show that the hard and dense diamond-like film could be obtained when the localized thermal spike due to the collision of high energy carbon atom can be effectively dissipated to the lattice.

Atomistic Simulation of Silicon Nanotube Structure (실리콘 나노튜브 구조의 원자단위 시뮬레이션)

  • 이준하;이흥주
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.3
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    • pp.27-29
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    • 2004
  • The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

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실리콘 나노튜브 구조의 원자단위 시뮬레이션

  • 이준하;이흥주;이주율
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.63-66
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    • 2004
  • The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

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Molecular Dynamics Study on Property Change of CMP Process by Pad Hardness (CMP 공정에서 연마패드 경도에 따른 연마 특성 변화 분자동력학 연구)

  • Kwon, Oh Kuen;Choi, Tae Ho;Lee, Jun Ha
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.1
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    • pp.61-65
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    • 2013
  • We investigated the wearable dynamics of diamond spherical abrasive during the substrate surface polishing under the pad compression via classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. The pad hardness had a big impact on the wearable dynamics of the abrasive. The moving speed of the abrasive decreased with increasing hardness of the pad. As the hardness decreased, the abrasive was indented into the pad and then the sliding motion of the abrasive was increased. So the pad hardness was greatly influenced on the slide-to-roll ratio as well as the wearable rate.

Molecular Dynamics Simulations Study on Abrasive's Speed Change Under Pad Compression (연마패드 압력에 따른 연마입자 이동속도 변화의 분자동역학적 시뮬레이션 연구)

  • Lee, Gyoo-Yeong;Lee, Jun-Ha;Kim, Tae-Eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.7
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    • pp.569-573
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    • 2012
  • We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

Molecular Dynamic Simulation of The Temperature-Dependent Single Wall Carbon Nanotube (온도변화에 따른 탄소 나노튜브의 분자 동역학 시뮬레이션)

  • 문원하;강정원;이영직;박수현;황호정
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.913-916
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    • 1999
  • Recent developments of carbon nanotubes are reviewed[1,2,3,4]. We use Tersoff carbon potential for bonded interactions[5] and Lennard-Jones 12-6 potential for non bonding interactions[6]to describe mechanical properties of the temperature-dependent armchair single wall carbon nanotube. At first we report that through defect number and bonding energy calculation, how single wall carbon nanutube is capped in the constant temperature. (300K, 2000K, 3000K, 4000K) At second, we perform MD simulation, which are performed on the energy optimized structure of carbon nanotube.

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Molecular dynamic studies for elastic constant of SiC crystal at high temperature (고온에서 SiC 결정의 탄성율에 대한 분자동역학연구)

  • Park, B.W.;Shin, H.R.;Kim, J.H.;Im, J.I.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.232-236
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    • 2010
  • Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

An In-silico Simulation Study on Size-dependent Electroelastic Properties of Hexagonal Boron Nitride Nanotubes (인실리코 해석을 통한 단일벽 질화붕소 나노튜브의 크기 변화에 따른 압전탄성 거동 예측연구)

  • Jaewon Lee;Seunghwa Yang
    • Composites Research
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    • v.37 no.2
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    • pp.132-138
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    • 2024
  • In this study, a molecular dynamics simulation study was performed to investigate the size-dependent electroelastic properties of single-walled boron nitride nanotubes(BNNT). To describe the elasticity and polarization of BNNT under mechanical loading, the Tersoff potential model and rigid ion approximation were adopted. For the prediction of piezoelectric constants and Young's modulus of BNNTs, piezoelectric constitutive equations based on the Maxwell's equation were used to calculate the strain-electric displacement and strain-stress relationships. It was found that the piezoelectric constants of BNNTs gradually decreases as the radius of the tubes increases showing a nonnegligible size effect. On the other hand, the elastic constants of the BNNTs showed opposites trends according to the equivalent geometrical assumption of the tubular structures. To establish the structure-property relationships, localized configurational change of the primarily bonded B-N bonded topology was investigated in detail to elucidate the BNNT curvature dependent elasticity.