Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 3 Issue 3
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- Pages.27-29
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- 2004
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- 1738-2270(pISSN)
Atomistic Simulation of Silicon Nanotube Structure
실리콘 나노튜브 구조의 원자단위 시뮬레이션
Abstract
The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.