• Nuclear Engineering and Technology
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• v.52 no.5
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• pp.1013-1021
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• 2020

A combination of simultaneous thermal analysis, evolved gas analysis and non-ambient XRD techniques was used to characterise and investigate the conversion reactions of ammonium uranates into uranium oxides. Two solid phases of the ternary system NH₃ - UO₃ - H₂O were synthesised under specified conditions. Microspheres prepared by the sol-gel method via internal gelation were identified as 3UO₃·2NH₃·4H₂O, whereas the product of a typical ammonium diuranate precipitation reaction was associated to the composition 3UO₃·NH₃·5H₂O. The thermal decomposition profile of both compounds in air feature distinct reaction steps towards the conversion to U₃O₈, owing to the successive release of water and ammonia molecules. Both compounds are converted into α-U₃O₈ above 550 ℃, but the crystallographic transition occurs differently. In compound 3UO₃·NH₃·5H₂O (ADU) the transformation occurs via the crystalline β-UO₃ phase, whereas in compound 3UO₃·2NH₃·4H₂O (microspheres) an amorphous UO₃ intermediate was observed. The new insights obtained on these uranate systems improve the information base for designing and synthesising minor actinide-containing target materials in future applications.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.605-608
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• 2004

A $Pt/Al_xGa_{l-x}N$ Schottky type Ultra-violet photodetector was modeled and simulated using the commercial SILVACO software program. In the carrier transport, we applied field model and other analytic model to determine the electron saturation velocity and low field mobility for GaN and $Al_xGa_{l-x}N$. A C-Interpreter function was defined to described the mole-fraction for the ternary compound semiconductor such as $Al_xGa_{l-x}N$. As comparing the simulated and experimental results, we found that the simulated result for type-1 has $15.9 nA/cm^2$ of leakage current at 5V. We confirmed a good agreement of photo-current in the UV Photo-detector, while applying the absorption coefficient and reflective index of active $Al_xGa_{l-x}N$ and other layers. There had been an intensive search for the proper refractive indices of the layers.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.89-92
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• 2007

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.86-90
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• 2008

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2113_2114
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• 2009

Chalcopyrite based sollar cells have received much attention because of their tunable electronic and optical properties. As a typical ternary chalcopyrite material, $CuInS_2$ has been considered as one of the most popular and promising candidates as absorber materials for photovoltaic applications because of its high absorption coefficient and environmental consideration. In this study, $CuInS_2$ powders have been synthesized using polyol process of a mixture of copper nitrate, indium nitrate, and thiourea with various stoichiometric molar ratios in ethylene glycol at $196^{\circ}C$. As boiling time goes by, the color of metal ion mixed solutions were changed transparent green to dark green and finally turned to black by reduction of OH- radicals. The prepared powders were fully characterized using SEM, XRD. The particle shape of black colored powders showed sphere with about 50 nm in particle size compared to those with dark green colored powders showed irregular shape with about $1{\mu}m$ in particle size. The XRD results showed highly crystallized $CuInS_2$.

• Journal of Powder Materials
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• v.22 no.3
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• pp.175-180
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• 2015

In this study, ternary compound Max Phase $Ti_2AlC$ material was mixed by 3D ball milling as a function of ball milling time. More than 99.5 wt% pure $Ti_2AlC$ was synthesized by using spark plasma sintering method at 1000, 1100, 1200, and $1300^{\circ}C$ for 60 min. The material characteristics of synthesized samples were examined with relative density, hardness, and electrical conductivity as a function of sintering temperature. The phase composition of bulk was identified by X-ray diffraction. On the basis of FE-SEM result, a terraced structures which consists of several laminated layers were observed. And $Ti_2AlC$ bulk material obtained a vickers hardness of 5.1 GPa at the sintering temperature of $1100^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.731-734
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• 2013

Reduced tungsten bronze nanoparticles of ternary and quaternary compounds were prepared by adding sodium and cesium to crystal structures of tungsten trioxides ($Na_xCs_{0.33-x}WO_3$, x = 0, 0.11) while maintaining the overall alkali metal fraction at 0.33, in an attempt to control near infrared (NIR) shielding property in the particular wavelength range of 780 to 1200 nm. The structure and composition analysis of the quaternary compound, $Na_{0.11}Cs_{0.22}WO_3$, revealed that 93.1% of the hexagonal phase was formed, suggesting that both alkali metals were mainly inserted in hexagonal channel. The NIR shielding property for $Na_{0.11}Cs_{0.22}WO_3$ was remarkable, as this material demonstrated efficient transmittance of visible light up to 780 nm and enhancement in NIR shielding because of the blue-shifted absorption maximum in comparison to $Cs_{0.33}WO_3$.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.91-93
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• 1989

x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.279-280
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• 2008

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.