Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Modeling for UV Photo-detector with Pt/AIGaN Schottky diode

Pt/AIGaN 쇼트키 다이오드의 수광특성 모델링

  • Kim Jong-Hwan (Dept. of School of Electrical Engineering, Kyungpook National University) ;
  • Lee Heon-Bok (Dept. of School of Electrical Engineering, Kyungpook National University) ;
  • Park Sung-Jong (Dept. of School of Electrical Engineering, Kyungpook National University) ;
  • Lee Jung-Hee (Dept. of School of Electrical Engineering, Kyungpook National University) ;
  • Hahm Sung-Ho (Dept. of School of Electrical Engineering, Kyungpook National University)
  • Published : 2004.06.01
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Abstract

A $Pt/Al_xGa_{l-x}N$ Schottky type Ultra-violet photodetector was modeled and simulated using the commercial SILVACO software program. In the carrier transport, we applied field model and other analytic model to determine the electron saturation velocity and low field mobility for GaN and $Al_xGa_{l-x}N$. A C-Interpreter function was defined to described the mole-fraction for the ternary compound semiconductor such as $Al_xGa_{l-x}N$. As comparing the simulated and experimental results, we found that the simulated result for type-1 has $15.9 nA/cm^2$ of leakage current at 5V. We confirmed a good agreement of photo-current in the UV Photo-detector, while applying the absorption coefficient and reflective index of active $Al_xGa_{l-x}N$ and other layers. There had been an intensive search for the proper refractive indices of the layers.

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