• Transactions of the Korean hydrogen and new energy society
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• v.18 no.3
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• pp.244-249
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• 2007

The present work considers the concept of enzymatic photoelectrochemical generation of hydrogen through water splitting using a Xe lamp as a source of light. A solar cell was applied to the system in order to shift the level of electrochemical energy of the system, resulting in the rate of hydrogen production at $43\;{\mu}mol/(cm^2{\times}hr)$ in cathodic compartment with an anodized tubular $TiO_2$ electrode(ATTE, $5^{\circ}C$/1hr in 0.5 wt% HF-$650^{\circ}C$/5hr). The trend of the rate of hydrogen production, for the ATTEs with different annealing temperature from $350^{\circ}C$ to $850^{\circ}C$, fairly well coincided with the photoelectrical properties measured by potentiostat. The actual chemical bias through imposition of two electrolytes of different pHs between anode(13.68) and cathode(7.5) was 0.24eV.

• Journal of The Korean Astronomical Society
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• v.47 no.6
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• pp.293-302
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• 2014

Simultaneous time monitoring observations of $H_2O$ $6_{16}-5_{23}$, SiO J = 1-0, 2-1, 3-2, and $^{29}SiO$ ${\upsilon}=0$, J = 1-0 lines are carried out in the direction of the Mira variable star TX Cam with the Korean VLBI Network single dish radio telescopes. For the first time, the $H_2O$ maser emission from TX Cam is detected near the stellar velocity at five epochs from April 10, 2013 (${\phi}=3.13$) to June 4, 2014 (${\phi}=3.89$) including minimum optical phases. The intensities of $H_2O$ masers are very weak compared to SiO masers. The variation of peak antenna temperature ratios among SiO ${\upsilon}=1$, J = 1-0, J = 2-1, and J = 3-2 masers is investigated according to their phases. The shift of peak velocities of $H_2O$ and SiO masers with respect to the stellar velocity is also investigated according to observed optical phases. The $H_2O$ maser emission occurs around the stellar velocity during our monitoring interval. On the other hand, the peak velocities of SiO masers show a spread compared to the stellar velocity. The peak velocities of SiO J = 2-1, and J = 3-2 masers show a smaller spread with respect to the stellar velocity than those of SiO J = 1-0 masers. These simultaneous observations of multi-frequencies will provide a good constraint for maser pumping models and a good probe for investigating the stellar atmosphere and envelope according to their different excitation conditions.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.6
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• pp.761-769
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• 1999

In this paper the effect of aging heat treatment to the Corrosion behavior for the Nimonic 80A superalloy was studied by AC Impedance methods. Tested solution was 3.5% with tempera-ture $25^{\circ}C$ Electro-chemical corrosion test were carried out for the Nimonic 80A super-alloy which solution heat treated at $1080^{\circ}C$ for 8 hours followed by aging heat treated at $650^{\circ}C,\;700^{\circ}C,\;750^{\circ}C\;800^{\circ}C$ and $850^{\circ}C$ with 16hours under vacuum environment. The obtained results were as follows; 1. Base metal and solution-treated materials were exhibited similar corrosion tendency as Ran-dle equivalent cell. The value of passive film resistance was 579 ohms for the base metal and 124,770 ohms for the solutionized metal such a difference was arose by the ${{\gamma}_^'}$ precipitate on the metal surface during heat treatment. 2. The measure value of $R_p$ for heat-treated at $650^{\circ}C,\;700^{\circ}C,\;800^{\circ}C$and $850^{\circ}C$ were 97,943, 93, 111, 26,961, 15,798 and 11,780ohm respectively. Which indicated that the passive film resistance Rp was reduced as aging temperature increased due to the growth of grain size and sensitization at the grain boundary. 3. The similar tendency was exhibited for corrosion behavior of the electro-chemical corrosion polarization method and AC impedance method and confirmed that AC impedance method was useful tool for corrosion research.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• Korean Journal of Materials Research
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• v.27 no.10
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• pp.513-517
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• 2017

An optimum route to fabricate a hybrid-structured W powder composed of nano and micro size powders was investigated. The mixture of nano and micro W powders was prepared by a ball milling and hydrogen reduction process for $WO_3$ and W powders. Microstructural observation for the ball-milled powder mixtures revealed that the nano-sized $WO_3$ particles were homogeneously distributed on the surface of large W powders. The reduction behavior of $WO_3$ powder was analyzed by a temperature programmed reduction method with different heating rates in Ar-10% $H_2$ atmosphere. The activation energies for the reduction of $WO_3$, estimated by the slope of the Kissinger plot from the amount of reaction peak shift with heating rates, were measured as 117.4 kJ/mol and 94.6 kJ/mol depending on reduction steps from $WO_3$ to $WO_2$ and from $WO_2$ to W, respectively. SEM and XRD analysis for the hydrogen-reduced powder mixture showed that the nano-sized W particles were well distributed on the surface of the micro-sized W powders.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.2
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• pp.156-165
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• 2015

A survivability-analysis program has been developed to analyze the ground collision risk of atmospheric reentry objects, such the upper stages of a launch vehicle or satellites, which move at or near the orbital velocity. The aero-thermodynamic load during the free fall, the temperature variation due to thermal load, and the phase shift after reaching the melting point are integrated into the 3 degree-of-freedom trajectory simulation of the reentry objects to analyze the size and weight of its debris impacting the ground. The analysis results of the present method for simple-shaped objects are compared with the data predicted by similar codes developed by NASA and ESA. Also, the analysis for actual reentry orbital objects has been performed, of which results are compared with the measurement data.

• Microbiology and Biotechnology Letters
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• v.20 no.2
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• pp.122-128
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• 1992

Runaway replication plasmid pSY35AT was used for the production of $cI_{857}$ repressor protein. E, coli MC1065 having plasmid pSY35AT was shifted from $30^{\circ}C$ to $37^{\circ}C$ $cI_{857}$ repressor protein produced was purified by a modification of the purification method of wild type cI repressor. The concentration of purified $cI_{857}$ repressor protein was 0.11 mg/ml. The binding assay of $cI_{857}$ repressor and right promoter - right operater ($P_RO_R$) labeled with $^3H-CTP$ was done. Relative activity of purified cIx5, repressor was higher about 23 times than that of cell free extract. A higher value of the temperature in the binding assay led to a lower value of the binding activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Korean Journal of Optics and Photonics
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• v.7 no.2
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• pp.129-135
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• 1996

We observed the absorptive optical bistability in the single layer amorphous $As_2S_3$ thin film which has an isolated electron pairs at roomtemperature, for the frist time, $Ar^+$ laser beam (λ=514.5 nm) was used as a light source and was focused by thin lens. The experiment was performed in cavityless system and the occurrence of optical bistability in this material could be explained by the temperature-dependent absorption coefficient of the sample. Also, this effect was explained by the reversible shift of the absorption edge in this material. The condition of optical bistability is determined by detuning value ($a_0L$) and this value was 0.12 when thikness of that sample was about 0.8 ${\mu}{\textrm}{m}$. The switching was observed clealy when light intensity is 150~180 mW and the swiching time was about $10^{-4}$ s.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.20-25
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• 1999

The effect of different plasma surface preparation and oxidation processes for the formation of $SiO_2-Si$(100) interfaces was studied using angle resolved uv-photoelectron spectroscopy. The surface preparation processes included ex situ preclean as well as in situ hydrogen plasma, which were compared to the processes of UHV annealing at high temperature. The spectral position of the oxide valence band features, with respect to the Fermi level. Were found to shift according to the different processes of surface preparation and oxidation. The shifts were analyzed in terms of band bending in the Si. Origins of the spectral shifts were considered to include defects at the $SiO_2Si$ interfaces and surface morphology(roughness) dependent on the surface preparation processes. From comparison of the ARUPS results of the various processes, it was concluded that the interface bonding of the silicon oxide-showed the lowest band bending.