• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.186-187
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• 2007

In this work, a temperature stable PWM(Pulse width modulation) circuit is proposed. The designed PWM circuit has a temperature dependent current source and a temperature independent voltage to compensate electrical characteristics with operating temperature. The variation of driving current is from about 4% to -6% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$ compared to the current at the room temperature. The variation of bandgap voltage reference is from about 1.3% to -0.2% with temperature when the supply voltage is 3.3 volts. From simulation results, the variation of output pulse width is less than from 0.86% to -0.38% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$.

• 한국초전도ㆍ저온공학회논문지
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• 제1권2호
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• pp.37-42
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• 1999

The stability of high-temperature superconducting current leads for cryogenic devices are investigated. By assuming full transition from superconducting state to normal state at a transition temperature, the HTS current at a transition temperature, the HTS current lead shows bifurcation phenomenon. There is a bifurcation shape-factor, HTS leads have three steady state. Below the bifurcation shape-factor, the superconducting current lead is unconditionally stable, because there exists only one steady-factor HTS current lead is conditionally stable depending on the shape and intensity of disturbance.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.425-430
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• 2003

A CMOS Voltage-Controlled Oscillator(VCO) for application at temperature stable system is designed. The VCO consists of bandgap voltage reference circuit, comparator, and voltage-to-current converter and the VCO has a temperature stable characteristics. The difference between simulated and calculated values is less than about 5% in output characteristics when the input voltage range is from 1V to 3.25V. The CMOS VCO has error less than about $\pm$0.85% in the temperature range from $-25^{\circ}C$ to $75^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• 한국안전학회지
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• 제18권3호
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• pp.1-7
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• 2003

In this study, CT specimens were prepared from spring steel(SPS5) processed shot peening. The fatigue crack growth tests were carried out in the environment of the room temperature md low temperature at $25^{\circ}C$, $-30^{\circ}C$, $-50^{\circ}C$, $-70^{\circ}C$ $-100^{\circ}C$ and $-150^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth (Region II) were decreased in proportion to descend temperature. It was shown that the fatigue resistance characteristics and fracture strength at low temperature are considerable higher than those of mom temperature in the early stage and stable of fatigue crack growth region.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

• 약학회지
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• 제39권1호
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• pp.24-30
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• 1995

Lectin from mistletoe(Viscum coloratum) fermented by Lactobacillus plantarum was compared with the lectin from unfermented mistletoe. Agglunating activity of fermented mistletoe was stable at pH 3.77~8.71, at temperature range of $0~40^{\circ}C$ and in the presence of 9 mental ions, which results are similar to unfermented one, but less stable at pH 2.03~3.00 and more stable at temperature $60~80^{\circ}C$ than lectin from unfermented one. Agglunating activity of lectin from mistletoe fermented for 1 or 2 days and from fraction number 42~54 was not inhibited by all sugars used except for lectin from fraction number 21~34. Mitogenic activity to murine lymphpocytes of lectin from mistletoe was decreased by fermentation process.

• 센서학회지
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• 제27권1호
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1239-1243
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• 2004

A novel voltage-current reference circuit for stable voltage-current applications is Proposed. Circuits for a positive and for a negative voltage-current reference are presented and are designed with commercial CMOS technology. The voltage-current reference that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the HSPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage and output current each is $0.57mV/^{\circ}C$, $0.11{\mu}A/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

• 대한토목학회논문집
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• 제31권1B호
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• pp.71-85
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• 2011

한반도의 해안 지하수 및 해수면 수위, 수온, 그리고 전기전도도(Electrical Conductivity, EC) 관측 자료를 통해 경향성 분석을 실시하여, 한반도 대수층의 해수침투 영향을 연구하였다. 총 27개소의 지하수위 및 EC 자료를 분석한 결과 지하수위는 27개소 모두 안정된 경향을 보였으며, EC는 증가 9개소, 안정 10개소, 감소 8개소로서 안정 및 변동의 경향을 나타내고 있으며, 해수면 수온은 총 14개소의 관측소 중 증가 12개소, 안정 2개소로서 증가의 경향이 대부분인 것으로 나타났으며, 해수면 수위 또한 총 24개소의 관측소 중 증가 18개소, 안정 3개소, 감소 3개소로 대부분의 관측소가 증가의 경향을 보였다. 특히, 동해와 남해안보다 서해의 해수면수위, 수온 및 EC의 모든 연구 항목의 상승 경향성을 보이는 관측소 비율이 높은 것으로 분석되어, 서해안에서 해수침투 영향이 타 해안보다 심각한 것으로 판단되며, 이에 대한 연구 및 대책이 강구되어야 하겠다.