• Progress in Superconductivity
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• v.9 no.1
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• pp.11-17
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• 2007

Magnetization studies have been carried out on $MgB_2$ polycrystalline samples in the temperature range of 5 - 44 K and in the magnetic field up to 7 Tesla. The critical current density was calculated from hysteresis loops using the Bean's critical state model, and the highest value of $J_c$ at 20 K was $2.7{\times}10^5\;A/cm^2$ at 2 Tesla. The hysteresis loops were carefully examined to determine the temperature and magnetic field range where flux jumps appeared. The first jump occurred typically at 1 Tesla. Due to the strong pinning, we observed the presence of flux jump below H = 1 Tesla at temperature below 30 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1177-1178
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• 2006

Magnetic Properties of dust cores made of mixtures of atomized pure iron powder and pure alumina powder has been investigated in the temperature range from 673 to 1073K. The effect of annealing on coercivity has been positive effect up to 973K and thus coercivity is gradually reduced form 280A/m (as-compressed) to 160A/m (973K). However, dust cores annealed at 1073K displayed a 15% increasing of coercivity by annealing at 973K. Hysteresis loss shows a tendency similar to coercivity. Microstructure observation of specimens shows grain refinement by recrystallization in the temperature range from 773 to 1073K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.164-167
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• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.9-14
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• 2007

In this paper, a rotating tool clamping device was developed based on a shape memory alloy(SMA) and its feasibility as a tool holder was experimentally explored. The SMA-based device was able to alter clamping to unclamping through temperature control within 1 second. The means and repeatability(${\sigma}$) of the tool clamping force were 185.5N and 6N respectively and its drifts were less than 3% for an hour. Considering the temperature hysteresis of the SMA-based tool clamping device, it is necessary to heat the SMA ring to around $50^{\circ}C$ after tool change to obtain more clamping force.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.107-108
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• 2007

In order to investigate the electrical properties of Hf-silicate as a function of annealing temperature, Hf-silicate deposited by atomic layer deposition (ALD) was studied. After Hf-silicate film deposition, annealing was proceeded at $500^{\circ}C\;and\;700^{\circ}C$. The hysteresis of C-V curves and trapping charge densities were decreased after annealing process. As annealing temperature became higher from $500^{\circ}C\;to\;700^{\circ}C$, the capacitance equivalent thickness (CET) was increased from 1.66 nm to 1.76 nm and the leakage current at -1 V was decreased from $1.70{\times}10^{-4}\;to\;5.68{\times}10^{-5}\;A/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.284-287
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• 2017

The electrocaloric effect in $0.94(Bi_{0.5}Na_{0.5})TiO_3+0.06KNbO3+0.9wt%$ G.F.ferroelectricceramics was observed in terms of the temperature change (${\Delta}T$) of the fabricated ceramics, Curie temperature $T_c$, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. $T_c$ appeared near $165{\sim}170^{\circ}C$. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near $150^{\circ}C$. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near $T_c$. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (${\Delta}T=0.31^{\circ}C$) was obtained at $165^{\circ}C$ under an applied electric field of 45 kV/cm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1364-1369
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• 2005

In this paper, we have identified the mechanism of C-V hysteresis behavior often observed in pentacene organic thin-film transistors (OTFTs). The capacitance-voltage (C-V) characteristics were measured for pentacene OTFTs fabricated on glass substrates with MoW as gate/source/drain electrode and TEOS $SiO_2$ as gate insulator. The measurements were made at room temperature and elevated temperatures. From the room temperature measurements, we found that the hysteresis behavior was caused by hole injection into the gate insulator from the pentacene semiconductor for large negative gate voltages, resulting in the negative flat-band voltage shift. However electron injection was observed only at elevated temperatures

• Tribology and Lubricants
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• v.34 no.1
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• pp.1-8
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• 2018

This paper presents the analysis of friction master curves for a sliding elastomer on rough granite. The hysteresis friction is calculated using an analytical model that considers the energy spent during the local deformation of the rubber due to surface asperities. The adhesion friction is also considered for dry friction prediction. The viscoelastic modulus of the rubber compound and the large-strain effective modulus are obtained from dynamic mechanical analysis (DMA). We accurately demonstrate the large strain of rubber that contacts with road substrate using the GW theory. We found that the rubber block deforms approximately to 40% strain. In addition, the viscoelastic master curve considering nonlinearity (at 40% strain) is derived based on the above finding. As viscoelasticity strongly depends on temperature, it can be assumed that the influence of velocity on friction is connected to the viscoelastic shift factors gained from DMA using the time-temperature superposition. In this study, we apply these shift factors to measure friction on dry granite over a velocity range for various temperatures. The measurements are compared to simulated hysteresis and adhesion friction using the Kluppel friction theory. Although friction results in the low-speed band match well with the simulation results, there are differences in the predicted and experimental results as the velocity increases. Thus, additional research is required for a more precise explanation of the viscoelastic material properties for better prediction of rubber friction characteristics.