• Journal of the Korean Chemical Society
• /
• v.38 no.7
• /
• pp.496-501
• /
• 1994

Square-wave voltammetric behavior for tellurium(Ⅳ) was studied in hydrochloric acid medium using a hanging mercury drop electrode. The reduction of tellurium(Ⅳ) was found to be irreversible and catalized by acid. Analytical conditions for the determination of tellurium(Ⅳ) and effects of diverse ions were also investigated. The detection limit of tellurium(Ⅳ) was $4.2\;ppb (3.3{\tiems}10^{-8}M)$. The amount of tellurium(Ⅳ) on the electrode surface was ${\Gamma}=(7.2{\pm}1.4){\times}10^{-11}\;mol\;cm^{-2}$.

• Analytical Science and Technology
• /
• v.8 no.4
• /
• pp.419-425
• /
• 1995

A method has been investigated for the determination of selenium and tellurium in Ginseng, Ganoderma and Garlic using hydride generation atomic absorption spectrometry(HG-AAS). The concentration effects of hydrochloric acid and sodium tetrahydroborate on the hydride generation for the determination of selenium and tellurium were investigated. The method of sample decomposition was also investigated using various mineral acids, such as nitric, perchloric and sulfuric acid in the closed system, and foreign ion effects containing in the samples were studied. The calibration curves of selenium and tellurium were obtained in the range of 0~40 ppb. The detection limits(S/N=2) of selenium and tellurium are 0.1 and 0.2 ppb. Analytical data of selenium and tellurium in Garlic, Ganoderma and Ginseng are 289, 296 and 198 ng/g for selenium and 146, 127 and 110 ng/g for tellurium, respectively.

• Journal of Environmental Health Sciences
• /
• v.24 no.3
• /
• pp.35-40
• /
• 1998

This study was conducted to examine the pathological changes of rat peripheral nervous system during exposure to tellurium known to be a demyelinating agent by using teasing nerve fiber method and quantitative light microscopic analysis by image analyzer. The pellet containing 1.2% of tellurium were fed for 3, 5, 7, 9, 13 days to male wistar rats (21 days old) and then neurologic symptom and the feature of nerve fiber myelination were studied. From this study, following results were obtained. In 3 days treated group, it showed various neurologic symptom and teased nerve fiber showed slight irregularity of the myeline sheath. In 5 days and 7 days treated groups, it showed the segmental demyetination in larger size fiber and widening of nodes of ranvier. In 9 days and 13 days treated groups, the remyelinated fibers were observed and it was generally small in size. We consequently suggest that teasing nerve fiber method and quantitative analysis of nerve fiber were useful pathologic screening method of neurotoxicity of the peripheral nervous system.

• Resources Recycling
• /
• v.6 no.3
• /
• pp.41-45
• /
• 1997

The recovery of tellurium from Te-cement obtained during the processing of copper anode slimes was carried out by a series of hydrometallurgical processes, i.E. leaching Te-cement in NaOH solution, precipitation of impurities with the addition of ${Na}_{2}S$ followed by direct electrowinning of tellurium in NaOH solution. The optimum conditions for each process were determined and discussed in terms of various parameters associated with each step to maximize the recovery and purity of tellurium. The final purity of tellurium from electrownning in alkaline solution was found to be more than 99.9%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.2
• /
• pp.190-193
• /
• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• Journal of the Korean Ceramic Society
• /
• v.55 no.1
• /
• pp.90-93
• /
• 2018

In this study, n-type $Bi_2Te_3$ in thermoelectric scrap is recovered through a wet reduction process. The recovered powder (tellurium) is grafted onto gas sensor in a new application that is not a thermoelectric device. Bismuth-rich powder is prepared by adding hydrazine when pH of the solution is brought to 13 using NaOH. The pH of the filtered solution was reduced using $HNO_3$, and then hydrazine was added to perform the re-reduction reaction. The tellurium-rich powder can be obtained through this reaction. The elemental analysis for these powders is confirmed by energy dispersive X-ray spectroscopy (EDS) analysis ; the successful separation of bismuth and tellurium is confirmed. Separated tellurium powder is mixed with DMF solvent and ethyl cellulose binder to confirm gas sensing properties. The tellurium paste was exposed in $NO_x$ atmosphere and exhibited a rapid reaction rate and recovery rate of less than 3 minutes for the gas.

• Nuclear Engineering and Technology
• /
• v.55 no.6
• /
• pp.2166-2171
• /
• 2023

In the present study, six silicone rubber doped by tellurium borate oxides were fabricated using the casting method. The densities of the fabricated silicon rubber-doped by tellurium borate oxides samples were measured using the Archimedes Method. Moreover, the linear attenuation coefficient of silicone rubber doped tellurium borate oxides samples was evaluated experimentally using the hyper pure germanium, and the recorded linear attenuation coefficient values were affirmed using the theoretical Phy-X program. The experimental measurements were performed using the narrow beam transmission method with radioactive isotopes Am-241, Cs-137, and Co-60 with energies of 59, 661, 1173, and 1332 keV. The linear attenuation coefficient values showed an enhancement by 4.73 times, 1.20 time, 1.17, time, and 1.17 time, respectively at gamma photon energies of 59, 661, 1173, and 1332 keV, when the TeO₂ concentration increased in the fabricated composites from 0 to 50 wt%. The enhancement of the linear attenuation coefficient values has a positive effect on the transmission rate values where the half-value thickness and transmission rate were decreased accompanied by an increase in the RPE.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.6
• /
• pp.547-555
• /
• 2023

High-density crossbar arrays based on storage class memory (SCM) are ideally suited to handle an exponential increase in data storage and processing as a central hardware unit in the era of AI-based technologies. To achieve this, selector devices are required to be co-integrated with SCM to address the sneak-path current issue that indispensably arises in such crossbar-type architecture. In this perspective, we first summarize the current state of tellurium-based threshold-switching devices and recent advances in the material, processing, and device aspects. We thoroughly review the physicochemical properties of elemental tellurium (Te) and representative binary tellurides, their tailored deposition techniques, and operating mechanisms when implemented in two-terminal threshold switching devices. Lastly, we discuss the promising research direction of Te-based selectors and possible issues that need to be considered in advance.

• Journal of Sensor Science and Technology
• /
• v.16 no.2
• /
• pp.91-96
• /
• 2007

The characteristic of tellurium thin films was studied for detecting nitrogen dioxide gas at room temperature. The film was deposited on $Al_{2}O_{3}$ substrate by using thermal evaporator. The subsequent process was heat treatment by several conditions. (temperature, flowed gases) Surface and grain boundary was investigated using SEM. The results showed that resistance of the tellurium film decreases reversibly in the presence of nitrogen dioxide. The sensitivity of this device depends on the gas concentration and detect lower concentrations less than 10 ppm.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.4
• /
• pp.815-818
• /
• 2010

Free base meso-tetraarylporphyrins ($H_2T(X)PP$) react with tellurium(IV) chloride ($TeCl_4$) in mild conditions for formation sandwich intermediate sitting-atop (i-SAT) complexes, [$TeCl_4(H_2T(X)PP)_2$]. $^1H$ NMR, $^{13}C$ NMR, UV-vis, FT-IR and elemental analysis were used for characterization of the products. In the proposed structure of the i-SAT complexes, four pyrroles of each porphyrin ring are tilted alternatively up and down and this appropriates suitable orientation of lone pairs of two pyrrolenine nitrogens for electron donation to a tellurium center. $^1H$ NMR and FT-IR results showed that in the produced complex, hydrogen atoms of porphyrin macrocycles remained on the pyrrole nitrogens.