• Journal of the Korea Society of Computer and Information
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• v.18 no.1
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• pp.111-121
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• 2013

In this paper, we propose a study on the technology level survey and analysis of problems for improving the defense IT survey. Existing in 2008 and 2009, were surveyed and the documents were distributed. It's managed on system. It was surveyed 86 technology but, the selection method and content was simple. we surveyed and interviewed to work-related parties for improving and analyzed management system and documents. So we derived improvements. we selected defense IT from various aspects. and commissioned survey for document review and technology level to about 130 experts. The technology level is composed of the best technology weapon states, technology gap, spread effect, technology achievement time and research & development method.. We finally selected 40 technology, and suggested results of the technology level survey.

• Journal of Information Technology Services
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• v.20 no.4
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• pp.129-140
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• 2021

Recently, interest in AI tutors is rising as a way to bridge the educational gap in school settings. However, research confirming the effectiveness of AI tutors is lacking. The purpose of this study is to explore how effective learner characteristics and recommended item learning activities are in predicting learner's academic performance in an adaptive online learning environment. This study proposed the hypothesis that learner characteristics (prior knowledge, midterm evaluation) and recommended item learning activities (learning time, correct answer check, incorrect answer correction, satisfaction, correct answer rate) predict academic achievement. In order to verify the hypothesis, the data of 362 learners were analyzed by collecting data from the learning management system (LMS) from the perspective of learning analytics. For data analysis, regression analysis was performed using the regsubset function provided by the leaps package of the R program. The results of analyses showed that prior knowledge, midterm evaluation, correct answer confirmation, incorrect answer correction, and satisfaction had a positive effect on academic performance, but learning time had a negative effect on academic performance. On the other hand, the percentage of correct answers did not have a significant effect on academic performance. The results of this study suggest that recommended item learning activities, which mean behavioral indicators of interaction with AI tutors, are important in the learning process stage to increase academic performance in an adaptive online learning environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.