• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.281-286
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• 2019

Raman spectra of a-C:H thin films deposited with an unbalanced magnetron sputtering system showed that the G peak shifted to a higher wavenumber as the target power density increased and $I_D/I_G$ ratio increased from 0.902 to 1.012. Moreover, the transmittance of a-C:H films fabricated at 60 nm tended to decrease with increasing target power density; at 550 nm in the visible light region, the transmittance decreased from 69% to 58%. The rms surface roughness values of the a-C:H thin films decreased with increasing target power density, and varied from 1.11 nm to 0.71 nm. In order to achieve efficient light trapping, the light scattering at the rough interface must be enhanced. Consequently, the surface roughness of the thin film will decrease with the target power density. Further, the refractive index and reflectivity of the a-C:H thin films increased with increasing target power density; however, the Brewster angle decreased with the target power density. Hence, dye-sensitized solar cells using an a-C:H antireflective coating increased the CE, $V_{OC}$, and $J_{SC}$ by approximately 8.6%, 5.5%, and 4.5%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.366-366
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• 2008

Amorphous carbon (a-C) is an interesting materials and its characteristics can be varied by tuning it $sp^3$ fractions. The $sp^3$ fraction in a-C films depends on the kinetic energy of the deposited carbon ions. In this work, a-C films was synthesized on Si(100) and glass substrates at room temperature by closed-field unbalanced magnetron (CFUBM) sputtering with the increase of graphite target power density. The structural and physical properties of films were investigated by using Raman spectroscopy, X-ray photoelectron spectrometer (XPS), nano- indentation, atomic force microscope (AFM) and contact-angle measurement. We obtained the good tribological properties, such as high hardness up to 26 GPa., friction coefficient lower than 0.1 and the smooth surface (rms roughness: 0.12 nm). The increase of the physical properties with the increase of target power density are related to the increase of nano-clusters in the carbon network. Also, these results might be due to the increase of the subplantation and resputtering by the increase of ions density in the plasma.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.40-43
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• 2018

Various Ni-doped carbon (C : Ni) thin films were fabricated using different Ni target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, and electrical properties of C : Ni films were investigated. The UBM C : Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C : Ni films decreased with the increase in target power density. The physical properties of the films such as hardness and elastic moduli increased while their electrical properties such as resistivity decreased with the increase in the target power density. These results show that an increase of the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film; this contributes to the changes observed in the physical and electrical characteristics.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

• 한국표면공학회지
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• 제50권3호
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• pp.192-197
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• 2017

A 6-way-cross consisting of a 2.75-inch CF flange was used as a main chamber on a PFEIFFER VACUUM TMP station based on a 67 l / sec turbo molecular pump and a diaphragm pump to produce a magnet array with a volume ratio of 5.5: 1.A 1-inch diameter copper target and graphite target were fabricated using MDX-1.5K from Advanced Energy Industries, Inc as a DC power supply. Ion current density of copper target and graphite target was measured by unbalanced magnetron sputtering. The basic pressure condition was $6.3{\times}10^{-7}mbar$ and the process pressure was Ar 50 sccm at $1.0{\times}10^{-2}mbar$ (7.5 mTorr) in the Ar atmosphere. Therefore, the relative density of copper ions reaching the substrate with the measured ion current density was derived.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.50-50
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• 2011

The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.

• 한국표면공학회지
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• 제41권6호
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• pp.274-278
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• 2008

3-dimensional numerical analysis for a rectangular magnetron cathode model is done to predict cooling characteristics of high power sputtering system for ZnO deposition. It includes cooling channel design, heat transfer analysis of a target, bonding layer and backing plate. In order to model erosion profiles of a target, ion current density distribution from 3D Monte Carlo simulation is used to distribute total sputtering power to 5 discrete regions. At 3 kW of sputtering power and cooling water flow of 1 liter/min at $10^{\circ}C$, the maximum surface temperature was $45.8^{\circ}C$ for a flat new target and $156^{\circ}C$ for a target eroded by 1/3 of its thickness, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.569-574
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• 1998

This paper presents a two-paralleled 4 quadrant DC chopper type PWM power conversion circuit in order to generate a gradient magnetic field in the Magnetic Resonance Imaging (MRI) system. This power amplifier is connected in parallel with the conventional 4-quadrant DC chopper using IGBTs at their inputs/outputs to realize further high-power density, high speed current tracking control, and to get a low switching ripple amplitude in a controlled current in the Gradient Coils (GCs). Moreover, the power conversion circuit has to realize quick rise/fall response characteristics in proportion to various target currents in GCs. It is proposed in this paper that a unique control scheme can achieve the above objective. DSP-based control systems realize a high control facility and accuracy. It is proved that the new control system will greatly enlarge the diagnostic target and improve the image quality of MRI.