• Title/Summary/Keyword: tRF

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B1+ Homogenizaion over Whole Field of View in High Field MRI (고자장 MRI에서의 영상 영역에 대한 B1+ 균질성)

  • Kim, Hong-Joon;Son, Hyeok-Woo;Cho, Young-Ki;Yoo, Hyoung-Suk
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.1
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    • pp.96-100
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    • 2012
  • In high static field magnetic resonance imaging(MRI) systems, $B_0$ fields of 7 T and 9.4 T, the impressed RF field shows larger inhomogeneity than in clinical MRI systems with B0 fields of 1.5 T and 3.0 T. In multi-channel RF coils, the magnitude and phase of the input to each coil element can be controlled independently to reduce the non-uniformity of the impressed RF $B_1^+$ field. The convex optimization technique has been used to obtain the optimum excitation parameters with iterative solutions for homogeneity in a selected ROI(Region of Interest). To demonstrate the technique, the multichannel transmission line coil was modeled together with a human head phantom at 400 MHz for the 9.4 T MRI system and $B_1^+$ fields are obtained. In this paper, all the optimized $B_1^+$ in each isolated ROIs are combined to achieve significantly improved homogeneity over the entire field of view. The simulation results for 9.4 T MRI systems are discussed in detail.

DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess (2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성)

  • Yoon, Hyung Sup;Min, Byoung-Gue;Chang, Sung-Jae;Jung, Hyun-Wook;Lee, Jong Min;Kim, Seong-Il;Chang, Woo-Jin;Kang, Dong Min;Lim, Jong Won;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.4
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    • pp.282-285
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    • 2019
  • A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).

The Electrical and Optical Characteristics of ATO Films Prepared by RF Magnetron Sputtering Method (RF 마그네트론 스퍼트링법에 의해 제조된 ATO 박막의 전기적 및 광학적 특성)

  • Kang, Sung Soo;Lee, Sung Ho;Jang, Yoon Seok;Park, Sang Chul
    • Journal of Korean Ophthalmic Optics Society
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    • v.15 no.4
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    • pp.299-305
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    • 2010
  • Purposes: The purposes of this study were to investigate the optical, structural and electrical properties of the antimony doped tin oxide(ATO) thin films according to certain variable deposition conditions, such as RF input power and T-S (target-substrate) distance change, using transparent conducting oxide (TCO). Methods: ATO thin films of Sb concentration ratio with $SnO_2:Sb_2O_5$ = 95:5 wt% were deposited at room temperature by RF magnetron sputtering method. Results: ATO thin films were most sensitive to the RF input power: light transmittance was 78% at RF input power of 30W, and 0.56 nm for the surface roughness and 1007 $\Omega{\cdot}cm^{-2}$ for the sheet resistance as well. Conclusions: It was found that ATO thin films were showed the large change in its characteristics of structural, optical and electrical properties which were affected by T-S distance and RF input power.

RF Energy Transfer Testbed Based on Off-the-shelf Components for IoT Application (IoT 응용을 위한 RF 에너지 전송 테스트베드 구현 및 실험)

  • Aziz, Arif Abdul;Tribudi, Dimas;Ginting, Lorenz;Rosyady, Phisca Aditya;Setiawan, Dedi;Choi, Kae Won
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.10
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    • pp.1912-1921
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    • 2015
  • In this paper, we introduce a testbed for testing the RF energy transfer technology in the Internet of Things (IoT) environment, and provide experimental results obtained by using the testbed. The IoT environment considered in this paper consists of a power beacon, which is able to wirelessly transfers energy via microwave, and multiple sensor nodes, which makes use of the energy received from the power beacon. We have implemented the testbed to experiment the RF energy transfer in such IoT environment. We have used off-the-shelf hardware components to build the testbed and have made the tesbed controlled by software so that various energy and data transmission protocol experiments can easily be conducted. We also provide experimental results and discuss the future research direction.

Effects of Process Variables on the Microstructure and Gas Sensing Characteristics of Magnetron Sputtered $\textrm{SnO}_2$Thin Films (마그네트론 스퍼터링 증착 조건에 따른 $\textrm{SnO}_2$ 박막의 미세구조와 가스검지특성 변화)

  • Kim, Jong-Min;Moon, Jong-Ha;Lee, Byung-Teak
    • Korean Journal of Materials Research
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    • v.9 no.11
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    • pp.1083-1087
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    • 1999
  • Microstructures and the gas-sensing characteristics of the $\textrm{SnO}_2$ thin films were studied, which were deposited at various conditions (rf power, sample temperature, $\textrm{O}_2$/Ar ratio) by the rf magnetron sputtering. As a result, six typical microstructures were derived, such as amorphous(A), amorphous mixed with polycrystalline grains (A+P), polycrystalline with random crystalographic orientation (P), fine columnar (FC), coarse columnar (CC) and Zone T (T) with dense fiberous structure. Typically, A, A+ P, and P structures were formed when no $\textrm{O}_2$ was added to the sputter gas, whereas FC, CC, and T structures were obtained when $\textrm{O}_2$ was added. The A structure formed at low rf power and low temperature, the A+P at high rf power and low temperature, and the P at high rf power and high temperature. The FC structure was obtained at low rf power and low temperature. the CC at low rf power and high temperature, and the T at high rf power and low temperature. Results of the gas-sensing test of the sensor chips fabricated from the typical films indicated that the fine columnar microstructure shows the highest sensitivity both at $300^{\circ}C$ and $400^{\circ}C$. It was proposed that this is due to the high specific surface area of the micro-columns.

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Modified T-RFLP Methods for Taxonomic Interpretation of T-RF

  • Lee, Hyun-Kyung;Kim, Hye-Ryoung;Mengoni, Alessio;Lee, Dong-Hun
    • Journal of Microbiology and Biotechnology
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    • v.18 no.4
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    • pp.624-630
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    • 2008
  • Terminal restriction fragment length polymorphism (T-RFLP) is a method that has been frequently used to survey the microbial diversity of environmental samples and to monitor changes in microbial communities. T-RFLP is a highly sensitive and reproducible procedure that combines a PCR with a labeled primer, restriction digestion of the amplified DNA, and separation of the terminal restriction fragment (T-RF). The reliable identification of T-RF requires the information of nucleotide sequences as well as the size of T-RF. However, it is difficult to obtain the information of nucleotide sequences because the T-RFs are fragmented and lack a priming site of 3'-end for efficient cloning and sequence analysis. Here, we improved on the T-RFLP method in order to analyze the nucleotide sequences of the distinct T-RFs. The first method is to selectively amplify the portion of T-RF ligated with specific oligonucleotide adapters. In the second method, the termini of T-RFs were tailed with deoxynucleotides using terminal deoxynucleotidyl transferase (TdT) and amplified by a second round of PCR. The major T-RFs generated from reference strains and from T-RFLP profiles of activated sludge samples were efficiently isolated and identified by using two modified T-RFLP methods. These methods are less time consuming and labor-intensive when compared with other methods. The T-RFLP method using TdT has the advantages of being a simple process and having no limit of restriction enzymes. Our results suggest that these methods could be useful tools for the taxonomic interpretation of T-RFs.

MR spectroscopy using single-shot RF localization technique (단일 RF 펄스를 사용한 3차원 체적 선택 방법을 이용한 MR 스펙트로 스코피)

  • Rim, C.Y.;Chun, K.W.;Ra, J.B.;Cho, Z.H.
    • Proceedings of the KOSOMBE Conference
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    • v.1989 no.05
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    • pp.51-54
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    • 1989
  • In last several years, a number of volume localization techniques, such as ISIS, VSE, SPARS and STEAM etc., have been developed for the MR spectroscopy. These localizing techniques, however, require application of several RF pulses for the 3-D volume selection and suffer from T1 and T2 decays due to relatively long RF excitation time. In this paper, we propose a single-shot RF pulse localization technique to achieve the localized 3-D volume selection. This technique combines the cylindrical volume selection technique with a radial gradient coil with single-shot RF pulse and the oscillating selection gradient technique, so thai it minimizes the volume selection time. We report some experimental results obtained with the proposed method which appears promising for 3-D volume imaging and localized spectroscopy.

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NMR Functional brain Imaging with the Tailored RF Pulse (TAILORED RF PULSE를 이용한 NMR에서의 뇌 기능 영상법)

  • Ro, Y.M.;Cho, Z.H.;Mennon, R.S.;Ugurbil, K.
    • Proceedings of the KOSOMBE Conference
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    • v.1993 no.05
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    • pp.21-24
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    • 1993
  • The experimental results of visual stimulation with the tailored RF pulse are reported. Tailored RF pulse is used for the susceptibility effect imaging. Around 25% signal change of visual cortex area is detected during photic stimulation. Interestingly, with the tailored RF pulse, the signal intensity of visual cortex is deceased during photic stimulation. It is, however, increased with normal $T_2$ weighted imaging. The comparison between normal $T_2$ weighted imaging and the tailored RF pulse imaging are performed with 4T NMR system and the results with human volunteer are also presented.

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Analysis and Optimization of the CMOS Transistors for RF Applications with Various Channel Width and Length (CMOS 트랜지스터의 채널 폭 및 길이 변화에 따른 RF 특성분석 및 최적화)

  • Choi, Jeong-Ki;Lee, Sang-Gug;Song, Won-Chul
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.8
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    • pp.9-16
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    • 2000
  • MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

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Low Fiele Measurement of 0.1 mT by Rabi's NMR Method (Rabi법 핵자기 공명에 의한 0.1 mT의 저자장 측정)

  • 유권상;김철기;우병칠;김창석
    • Journal of the Korean Magnetics Society
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    • v.3 no.2
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    • pp.139-142
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    • 1993
  • The Rabi's NMR experiment using polarized flowing water was performed in order to measure the low field and the good NMR signal was obtained in the range of 0.1 mT. There was a change in amplitude and phase of signal due to the sinusoidal variation with the increasing RF field. The nominal field could be determined within a few tens ppm uncertainty by the NMR signal under the optimized RF condition.

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