• 제목/요약/키워드: switching property

검색결과 180건 처리시간 0.022초

Study of Modulation Effect in Integrated Interface Under Controlling Switching Light-Emitting Diode Lighting Module

  • Hong, Geun-Bin;Jang, Tae-Su;Kim, Yong-Kab
    • Transactions on Electrical and Electronic Materials
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    • 제12권6호
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    • pp.253-257
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    • 2011
  • This study was carried out to solve problems such as radio frequency band depletion, confusion risk, and security loss in existing visible wireless communication systems, and to determine the applicability of next-generation networks. A light-emitting diode (LED) light communication system was implemented with a controlling switching light module using the ATmega16 micro-controller. To solve the existing modulation effect and disturbance in visible light communication, an integrated interface was evaluated with a driving light module and analyzes its reception property. A transmitter/receiver using the ATmel's micro-controller, high-intensity white LED-6 modules, and infrared sensor KSM60WLM and visible sensor TSL250RD were designed. An experiment from the initial value of distance to 2.5 m showed 0.46 V of the voltage loss, and if in long distance, external light interference occurred and light intensity was lost by external impact and thus data had to be modified or reset repeatedly. Additionally, when we used 6 modules through the remote controller's lighting dimming, data could be transmitted up to 1.76 m without any errors during the day and up to 2.29 m at night with around 2~3% communication error. If a special optical filter can reduce as much external light as possible in the integrated interface, the LED for lighting communication systems may be applied in next generation networks.

Design of a SMC-type FLC and Its Equivalence

  • 최병재;곽성우;김병국
    • 한국지능시스템학회논문지
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    • 제7권5호
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    • pp.14-20
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    • 1997
  • This paper proposes a new design method for the SMC-type FLC and shows that a SMC-type LFC is an extension of the SMC with BL. The conventional SMC-type FLC uses error and change-of-error as inputs of the FLC and generates the absolute value of a switching magnitude. Then, the fuzzy rule table is constructed on a two-dimensional space of the phase plane and has commonly the skew symmetric property. In this paper, we introduce a new variable, signed distance, from the skew symmetric property of the rule table. And thd variable becomes only a fuzzy variable that is used to generate the control input of a SMC-type FLC. that is, we design a new SMC-type FLC that uses a signed distance and a control input as the variables representing the contents of the rule-antecedent and the rule-con-sequent, respectively. Then the number of total rules is reduced and the control performance is almost the same as that of the conventional SMC-type FLC. Additionally, we derive the control law of the ordinary SMC with BL from a new SMC-type FLC. Namely, we show that a FLC is an extension of the SMC with BL.

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IP활용에 적합한 저전력 MCU CORE 설계 (Design of a Low Power MictoController Core for Intellectual Property applications)

  • 이광엽;이동엽
    • 한국정보처리학회논문지
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    • 제7권2호
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    • pp.470-476
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    • 2000
  • 본 논문은 소자 수준의 설계방법 보다아키텍쳐와 같은사위수준의 설계방법을 적용하여 IP(Intellectual Property)에 활용하기 적합한 저전력 마이크로콘트롤러 코어 설계를 다루었다. 스위칭 캐패시턴스를 줄이기 위하여 자주 사용되는 레지스터 전달 마이크로 오퍼레이션에 레지스터간의 직접적인 전달 구조를 적용하였다. 입력데이터의 상승예지 시간을 줄이기 위하여 분산 버퍼구조를 제안하였다. 또한 성능저하 없이 소비전력을 줄이기 위하여 파이프라인 구조에 적용된다. 본 논문에서는 CISC 명령어를 처리하기에 적합한 파이프라인이 설계되었다. 설계된마이크로콘트롤러는 전력소모를 20%정도 감소시켰다. 전력소모를 측정하기 위해서는 SYNOPSYS의 EPIC powermill과 현대 0.6um CMOS 파라메터를 적용하였다.

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증기중합으로 제조된 전도성 고분자 박막의 전기 변색 특성 (Electrochromic Property of a Conductive Polymer Film Fabricated with Vapor Phase Polymerization)

  • 이지예;김유나;김은경
    • 멤브레인
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    • 제20권1호
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    • pp.8-12
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    • 2010
  • 전도성 고분자 중 안정성이 높은 Poly(3,4-ethylenedioxythiophene) (PEDOT)을 이용하여 전기변색 박막을 제조하고 박막제조 방법에 따른 전기변색 특성을 연구하였다. PEDOT 박막은 전기중합법과 증기중합법에 의해 제조되었고, 두가지 방법 모두 도핑되지 않은 중성 상태에서 짙은 푸른색을 띠는 박막으로 제조되었다. 전기변색 특성을 평가하기 위하여 UV-Vis spectrophotometer와 Cyclic voltammetry가 사용되었으며, 산화/환원 시 표면은 AFM으로 관찰되었다. 전기 중합법으로 제조된 PEDOT 박막에 비해 증기중합에 방법에 의해 제작된 PEDOT 박막의 표면이 거칠기 50 nm 이내로 균일 하였다. 특히 증기 중합법을 이용하여 제조된 전기 변색 소재의 특성도 응답성 1.5초 이내, 49%의 투과율 차이, 402의 변색 효율을 보여 박막의 특성 향상으로 전기변색특성이 향상 된 결과를 보였다.

Optically Controlled Silicon MESFET Modeling Considering Diffusion Process

  • Chattopadhyay, S.N.;Motoyama, N.;Rudra, A.;Sharma, A.;Sriram, S.;Overton, C.B.;Pandey, P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.196-208
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    • 2007
  • An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

THE INFLUENCE OF THE TIME SLICING OF A PROCESSOR SHARING COMMUNICATION MODEL

  • LIM JONG SEUL;PARK CHIN HONG;AHN SEONG JOON
    • Journal of applied mathematics & informatics
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    • 제17권1_2_3호
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    • pp.737-746
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    • 2005
  • Average memory occupancy and congestion in computer system or communication system may be reduced further if new jobs are admitted only when the number of jobs queued at CPU is below a certain threshold, run queue cutoff (RQ). In our previous paper we showed that response time of a job is invariant with respect to RQ if jobs do not communicate each other. In this paper, we prove that the invariance property by considering the evolution of the queue lengths as point processes. We also present an approximate method for the delay due to context switching under time slicing.

Design of High Efficiency CMOS Class E Power Amplifier for Bluetooth Applications

  • Chae Seung Hwan;Choi Young Shig;Choi Hyuk Hwan;Kim Sung Woo;Kwon Tae Ha
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.499-502
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    • 2004
  • A two-stage Class E power amplifier operated at 2.44GHz is designed in 0.25-$\mu$m CMOS process for Class-l Bluetooth application. The power amplifier employs c1ass-E topology to exploit its soft-switching property for high efficiency. A preamplifter with common-mode configuration is used to drive the output-stage of Class-E type. The amplifier delivers 20-dBm output power with 70$\%$ PAE (power -added-efficiency) at 2-V supply voltage.

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Mutually-Actuated-Nano-Electromechanical (MA-NEM) Memory Switches for Scalability Improvement

  • Lee, Ho Moon;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.199-203
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    • 2017
  • Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability improvement. While conventional NEM memory switches have fixed electrode lines, the proposed MA-NEM memory switches have mutually-actuated cantilever-like electrode lines. Thus, MA-NEM memory switches show smaller deformations of beams in switching. This unique feature of MA-NEM memory switches allows aggressive reduction of the beam length while maintaining nonvolatile property. Also, the scalability of MA-NEM memory switches is confirmed by using finite-element (FE) simulations. MA-NEM memory switches can be promising solutions for reconfigurable logic (RL) circuits.

적응 적분바이너리 관측기를 이용한 돌극형 영구자석 동기전동기 센서리스 속도제어 (A Sensorless Speed control of IPMSM using an Adaptive Integral Binary Observer)

  • 이형;김영조;강형석;김영석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.229-231
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    • 2006
  • The paper presents a sensorless speed control of interior permanent magnet synchronous motors using an adaptive integral binary observer in view of composition with a main loop regulator and an auxiliary loop regulator. The binary observer has a property of the chattering alleviation in the constant boundary layer; however, the steady state estimation accuracy and robustness are dependent upon with width of the constant boundary. In order to improve the steady state performance of the binary observer, the binary observer is formed by adding extra integral dynamic to the switching hyperplane equation.

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출력 인덕터와 변압기를 결합시킨 하프브리지 컨버터에 관한 연구 (A study on the Half-Bridge converter combine output inductor with transformer)

  • 배진용;김용;권순도;백수현;최근수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.211-215
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    • 2006
  • This paper present the Half-Bridge converter for low current output. In converter system, magnetic components are important devices used for energy storage, energy transfer, galvanic isolation and filtering. The proposed Half-Bridge converter is to reduce the number of magnetic components. The secondary rectification was discussed by comparison of center-tap type with primary center-core transformer winding and primary side-core transformer winding. A prototype featuring 400V input, 10V output, 400kHz switching frequency, and 100W output power.

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