• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.118-125
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• 2007

The lightning surge and switching surge could be injected to the underground distribution line through the riser pole in the mixed distribution line of overhead and underground. These surges travel along the cable and are reflected at the end of cable. It can be doubled and affecting underground distribution facilities. It was made a underground distribution model representing KEPCO's distribution system. It was measured propagation characteristics by applying lightning surges to this underground distribution model. Meanwhile, this system was simulated with ATP-EMTP and compared these real test results md tuned up the EMTP parameters. EMTP simulation results showed that accord with real test result by adjusting the cable insulation permitivity, arrester characteristics, surge wave shape.

• Journal of Electrical Engineering and Technology
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• v.7 no.5
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• pp.765-771
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• 2012

$SF_6$ gas has been used as arc quenching and insulating medium for high and extra high voltage switching devices due to its high dielectric strength, its excellent arc-quenching capabilities, its high chemical stability and non toxicity. Despite of its significant contributions, the gas was classified as one of the greenhouse gas in the Kyoto Protocol. Thus, many researches are conducted to find out the replacement materials and to develop the $SF_6$ gas useless electrical equipment. This paper describes experiments on the temperature change-related breakdown characteristics of $SF_6$ gas ($SF_6$) and $SF_6$ liquid ($LSF_6$) in a model GIS(Gas-Insulated Switchgear) chamber in order to show the possibility of more stable and safe usages of $SF_6$ gas. The breakdown characteristics are classified into three stages, namely the gas stage of $SF_6$ according to Paschen's law, the coexisting stage of $SF_6$ gas with liquid in considerable deviation at lower temperature, and the stage of $LSF_6$ and remaining air. The result shows that the ability of the $LSF_6$ insulation is higher than the high-pressurized $SF_6$. Moreover, it reveals that the breakdown characteristics of $LSF_6$ are produced by bubble-formed $LSF_6$ evaporation and bubbles caused by high electric emission and the corona. In addition, the property of dielectric breakdown of $LSF_6$ is determined by electrode form, electrode arrangement, bubble formation and movement, arc extinguishing capacity of the media, difficulty in corona formation, and the distance between electrodes. The bubble formation and flow separation phenomena were identified for $LSF_6$. It provides fundamental data not only for $SF_6$ gas useless equipment but also for electric insulation design of high-temperature superconductor and cryogenic equipment machinery, which will be developed in future studies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• Journal of the Korea Fashion and Costume Design Association
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• v.3 no.2
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• pp.51-62
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• 2001

This study was intended to investigate the contemporary meaning of transparent design expressed in contemporary fashion by inquiring into its plasticity expressed in contemporary design and fashion and analyzing the association between them. It used the comparative anesthetic method widely used by H. W lfflin and other scholars in eliciting the differences and similarities in styles. It attempted to investigate the plasticity of transparent design expressed in contemporary design by dividing it into the epidermal, spatial and ideological effects. Contemporary design expressed the epidermal effects such as lightness(nimbleness), smoothness, contrast and stress It expressed the spatial effects such as spatial flexibility through the interpenetration of interior and exterior spaces, expansion of the space and the like. And it expressed ideological effects such as openness, pureness, playfulness and the like. In terms of lightness, contemporary design expressed actual or visual lightness by using transparent materials. In terms of the interpenetration of interior and exterior spaces, it expressed the interpenetration of the interior space into the exterior spaces and vice versa. In terms of spatial expansion, contemporary design expressed the infinite spatial connection by drawing the exterior space into the interior space. Contrast and stress were formed by imposing visual unity on contemporary fashion by using opaque and transparent materials. In terms of openness, contemporary design expressed contemporary people's candor and dependability by making the inside of the building or object look outward. To express pureness, contemporary design used the clear and transparent image by using the glass or translucent materials taking on the pure property. To express playfulness, contemporary made use of the vagueness of the spatial boundary, the locational switching of inner and outer spaces, and interesting external forms occurring when light pass through opaque and transparent materials.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3205-3214
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• 1996

In this paper, the microstrip phased array antennas with coupling-slots for the base station of mobile communication is proposed and anlyzed with accurate analysis method which is based on both reciprocity principle and full-wave analysis. The basis functions used for the numerical analysis are determined depending upon the accuracy, convergence properties of the solution, and the computation time. The patch uses 3 EB mode and the slot uses IPWS mode. The designed phased array antenna has 8 slot-coupled microstrip patch array elements and the beam scanning capability is obtained by using the 4-bit PIN-diode phase shifters as switching devices which are consisted of the loaded line phase shifters for 30.deg. and 60.deg. and the reflection type phase shifters for 90.deg. and 180.deg. repectively. The 4-bits phase shifters which aremade by connecting each phase shifter have about 2.deg.-3.deg. phase errors and their insertion loss are about 3dB for each phase state. The fabricated 8-element phased array antenna with 4-bits phase shifters provides 12.deg.-14.deg. beamwidths depending on the scanning angle and is capable of scanning its beam to .+-.45.deg. with 9.deg. intervals, and the gain 12dBi. The overall results show that the slot-coupled phased array antenna has great advantages of wideband, high gain and reduced spurious radiation. Also, the antenna can be made small and thin. Furthermore, the scanning property of this antenna allows for its application in several areas, such as mobile communication system and PCS.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3277-3285
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• 1996

In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1168-1171
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• 2003

In contrast to a conventional transformer, the flat transformer is made using a number of small ferrite cores. Two cores for transformer and one core for inductor, which composed one module. Many modules can be connected together to form a flat matrix transformer. This structural arrangement eliminates the single hot spot problem in conventional transformers and permits high current density pertains at high frequency. In this study, the ferrite magnetic cores of Mn-Zn system for the Flat transformer were manufactured and the electrical and magnetic characteristics of its tested. The power loss of sample FO2(Mn-Zn ferrite) sintered at $1350^{\circ}C$ was $350kW/m^3$ in test conditions of 250kHz, 200mT and $100^{\circ}C$, which showed the good power loss property in high frequency. The power loss of FO2 samples has been studied as a function of magnetic flux density and frequency. Steinmetz exponent was 2.82 at 250kHz and 2.73 at 500kHz. These results illustrated the switching of power loss mechanism in ferrite core from hysteresis losses to eddy current losses or others.

• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.270-277
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• 1998

As the network technologies advance, the control systems progress from a centralized architecture to a distributed one. However, these control systems were designed mostly based on the general-purpose operating systems(OS) and have many problems for assurance of a real-time property required for plant processing fields. Therefore, the control systems far a plant process upon real-time OS hare been increased gradually. In this paper, the real-time OS emphasizes on the realization of real-time processing capability, reliability of real-time response, and multi-processing functionality which are prerequisites for a distributed control system. And on the basis of this OS, the number of executable loop and logic, the functions of main plant processing, was analyzed and its validity was also evaluated. The system in this paper was designed not to effect on processing data while online, and the time spent on switching was measured.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.