• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.904-907
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area(${\pi}-A$) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This results suggest that the dendrimers with azobenzene group can be applied to high efficient nano-device of molecular level. And we measured the electrical properties by MIM and STM. The dendrimer with azobenzene group compared trans form and cis form at electrical properties.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1071-1079
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• 2002

This paper reports a methodology and application lot calculating distribution of the director in a liquid crystal cell by a numerical technique. To calculate distribution of the director, we applied a three dimensional finite element method (FEM) and calculated the distributions of electric potential and director in the liquid crystal cell. We have considered the free-energy density in the bulk of liquid crystal cell and calculated the switching property by the Ericksen-Leslie equation and the Laplace equation. We have calculated the optical transmission with distribution of the director by Berreman's method and confirmed the threshold voltage and the response time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.229.2-229.2
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• 2014

Graphene, an allotrope of carbon, is a two-dimensional material having a unique electro-mechanical property that shows significant change of the electrical conductance under the applied strain. In addition of the extraordinary mechanical strength [1], graphene becomes a prospective candidate for pressure sensor technology [2]. However, very few investigations have been carried out to demonstrate characteristics of graphene sensor as a device form. In this study, we demonstrate a pressure sensor using graphene double layer as an active channel to generate electrical signal as the response of the applied vertical pressure. For formation of the active channel in the pressure sensor, two single graphene layers which are grown on Cu foil (25 um thickness) by the plasma enhanced chemical vapor deposition (PECVD) are sequentially transformed to the poly-di-methyl-siloxane (PDMS) substrate. Dry and wet transfer methods are individually employed for formation of the double layer graphene. This sensor geometry results a switching characteristic which shows ~900% conductivity change in response to the application of pulsed pressure of 5 kPa whose on and off duration is 3 sec. Additionally, the functional reliability of the sensor confirms consistent behavior with a 200-cycle test.

• Journal of Power Electronics
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• v.13 no.4
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• pp.569-583
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• 2013

In this study, the simultaneous use of a multi-level converter (MLC) as a DC-motor drive and as an active battery cell balancer is investigated. MLCs allow each battery cell in a battery pack to be independently switched on and off, thereby enabling the potential non-uniform use of battery cells. By exploiting this property and the brake regeneration phases in the drive cycle, MLCs can balance both the state of charge (SoC) and temperature differences between cells, which are two known causes of battery wear, even without reciprocating the coolant flow inside the pack. The optimal control policy (OP) that considers both battery pack temperature and SoC dynamics is studied in detail based on the assumption that information on the state of each cell, the schedule of reciprocating air flow and the future driving profile are perfectly known. Results show that OP provides significant reductions in temperature and in SoC deviations compared with the uniform use of all cells even with uni-directional coolant flow. Thus, reciprocating coolant flow is a redundant function for a MLC-based cell balancer. A specific contribution of this paper is the derivation of a state-space electro-thermal model of a battery submodule for both uni-directional and reciprocating coolant flows under the switching action of MLC, resulting in OP being derived by the solution of a convex optimization problem.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.124-127
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• 2005

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of $Ge_xSb_{100-x}$($6{\le}x{\le}$34) were studied to investigate the feasibility of applying $Ge_xSb_{100-x}$ alloys in optical memory. The $Ge_xSb_{100-x}$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AEM). Optimum fiim composition of $Ge_xSb_{100-x}$ was studied and its minimum time fur laser induced crystallization and optical contrast fur phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that $Ge_xSb_{100-x}$ have an potential far optical memory applications.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.925-926
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• 2006

This paper presents a sensorless speed control of an interior permanent magnet synchronous motor using an adaptive integral binary observer and fuzzy logic controller. In view of composition with a main loop regulator and an auxiliary loop regulator, the binary observer has a property of the chattering alleviation in the constant boundary layer. However, the steady state estimation accuracy and robustness are dependent upon the width of the constant boundary. In order to improve the steady state performance of the binary observer, the binary observer is formed by adding extra integral dynamics to the switching hyperplane equation. Also, because the conventional fixed gain PI controller are very sensitive to step change of command speed, parameter variations and load disturbance, the fuzzy logic controller is used to compensate a fixed gain PI controller. Therefore, a gain PI is fixed and the IPMSM is drived at another speed region. The effectiveness of the proposed the adaptive integral observer and the fuzzy logic controller are confirmed by experimental results.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.2 no.2
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• pp.59-63
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• 1988

In a fixed AC power source the PWM techniques were used to vary the voltage and the fundamental frequency. The conventional PWM techniques due to the problem of commutation number and filter size have been studied the PWM output waveforms which applied the motor drive. However in this paper, the carrier frequency with sinusoidal PWM waveform is modulated from 10(KHz) to 45(KHz) using termination devices with high - speed switching capacity and applying LPF(Low Pass Filter) with small capacity to output of inverter and the PAM(Pulse Amplitude Modulation)is obtained. Considering the property of the speed and the control, the sinusoidal PWM control circuit was composed of the microprocessor and analog circuit. In experment result, the system properties are study on the sinusoidal voltage waveform with modulation index changing from 0.6 to 1.0.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.3
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• pp.283-289
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• 2014

This paper carries out a series of analysis of power system using Gallium Nitride (GaN) FET which has wide band gap (WBG) characteristics comparing to conventional Si MOSFET-used power system. At first, for comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. Also, in order to enable a representative assessment on the power system level, Si MOSFET and GaN FET are applied to the most common structure of power system, full-bridge, and each power systems are compared based on various criteria, such as performance, efficiency and power density. The entire process is verified with the aid of mathematical analysis and simulation.