• Progress in Superconductivity
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• 제7권2호
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• 한국식품과학회지
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• 제21권6호
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• pp.780-787
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• 1989

쌀과 분리대두단백 혼합에 따른 조직화 특성에서 쌀 혼합량 30%까지 증가할수록 토출구온도, 수용성 질소지수 및 조직잔사지수가 떨어지며 씹힘성과 검성이 감하여 부드러운 조직감이 형성되었다. 또한 쌀혼합량의 증가에 따라 최종 제품의 수분함량은 증가되었으나 밀도에는 변화가 없었고 재흡수력은 감소하는 경향이었다. 한편 복원 후에는 제품의 명도가 밝아졌다. 압출성형 준의 압력분포는 $15{\sim}100kg/cm^3$의 범위였다. 미세구조에서는 쌀혼합량이 증가할수록 기공의 크기가 증대하였으며 쌀 전분질이 호화된 표면구조를 지니고 있었다.

• Journal of the Optical Society of Korea
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• 제18권5호
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• pp.569-573
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• 2014

We demonstrate a low-cost, superbly efficient way of etching for the nano-, and micro-sized pyramid patterns on (100)-oriented Si wafer surfaces for use as a patterned master. We show a way of producing functional optical films for the viewing angle direction brightness-enhancement of Lambertian LED (light emitting diode)/OLED (organic light emitting diode) planar lighting applications. An optimally formulated KOH (Potassium hydroxide) wet etching process enabled random-positioned, and random size-distributed (within a certain size range) pyramid patterns to be developed over the entire (100) silicon wafer substrates up to 8" and a simple replication process of master patterns onto the PC (poly-carbonate) and PMMA (poly-methyl methacrylate) films were performed. Haze ratio values were measured for several film samples exhibiting excellent values over 90% suitable for LED/OLED lighting purposes. Brightness was also improved by 13~14% toward the viewing angle direction. Computational simulations using LightTools$^{TM}$ were also carried out and turned out to be in strong agreement with experimental data. Finally, we could check the feasibility of fabricating low-cost, large area, high performance optical films for commercialization.

• 한국재료학회지
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• 제27권4호
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• pp.211-215
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• 2017

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

• 한국세라믹학회지
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• 제54권6호
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• pp.511-517
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• 2017

With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.55-58
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• 2003

FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.19-24
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• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• Journal of Periodontal and Implant Science
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• 제37권2호
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• pp.151-164
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• 2007

Objective: The sinus floor elevation procedures have been used to facilitate implant placement in the severely atrophic posterior maxilla. Many variables may have an influence on the outcomes of the sinus floor elevation in combination with implant treatment. The aim of this study was to analyze survival rate of implants placed in the edentulous maxillae of patients in whom sinus floor elevation was undertaken according to variables. Materials and Methods: It consisted of 96 patients(50 male and 46 female), ranging in age from 31 to 70 years(mean 49 years), who underwent sinus floor elevation procedure(94 implants in left side and 106 implants in right side) from 2001 to 2002. A total of 200 implants were placed in the grafted sinus(73 implants in lateral approach and 127 implants in crestal approach). All implants were restored by fixed prosthesis. All patients were healthy. Follow-up periods for implants were between 48 to 60 months. Results: The cumulative survival rate of implants was 91.5%. Gender, age and operation site did not have an influence on the survival rate. There was statistically significant differences for the implants which placed in less than 4 or 5 rom residual bone height, the survival rate was 60%, 81.4% respectively (p<0.05). There was no statistically significant difference of implants survival rate ac- cording to approach technique. The survival rate for 100% autogenous bone grafts was lower with respect to composite grafts containing autogenous bone and 100% substitutes. The survival rate for hydroxyapatite-coated implants was statistically significant lower than other textured group (p<0.05). Conclusion: Residual bone height, surface texture and graft materials have an influence on the survival rate. To use autogenous bone as a part of a composite bone replacement, implant texture which leads to more favorable implant-bone interface were necessary. To determine residual bone height for initial implant stability was important.

• 한국세라믹학회지
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• 제43권11호
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• 감성과학
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• 제17권3호
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• pp.75-82
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• 2014

본 연구는 에어제트텍스쳐링 장치에서 공급되는 코어사와 이펙트사인 아라미드와 나일론의 구성이 방호의류용 아라미드/나일론 ATY와 아라미드 ATY의 물성변화에 대한 연구이다. 아라미드 필라멘트 표면의 매끄러움 때문에 아라미드 ATY의 강도 저하는 나일론 ATY에 비해 훨씬 높았다. 아라미드/나일론 ATY 강도는 ATY의 이펙트사인 나일론의 강도에 가장 영향을 많이 받았다. 나일론 ATY의 절단신도는 에어제트텍스쳐링 이전의 나일론에 비해 두 배정도 높은 값을 나타내었으며, 아라미드 ATY와 아라미드/나일론 ATY는 에어제트텍스쳐링 이전에 비해 5.9~6.7배 정도로 높았다. 아라미드 ATY의 초기탄성률은 아라미드의 에어제트텍스쳐링 이전에 비해 86.5%정도 감소하였으며, 아라미드/나일론 ATY의 초기탄성률은 아라미드 ATY와 나일론 ATY 초기탄성률의 산술평균치를 나타내었다. 아라미드/나일론 하이브리드 ATY의 습 건열 수축률은 나일론의 영향을 받음을 알 수 있었다.