Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure

  • Liu, Xingzhao (National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China) ;
  • Tao, Bowan (National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China) ;
  • Wu, Chuangui (National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China) ;
  • Zhang, Wanli (National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China) ;
  • Li, Yanrong (National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China)
  • Published : 2006.11.30
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Abstract

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

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