• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.105-105
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• 2016

Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

• Journal of the Korean Society for Heat Treatment
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• v.8 no.4
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• pp.255-265
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• 1995

Stainless steel type 304L has been nitrided in the low pressure (600Pa) and high nitrogen (80% $N_2$+20% $H_2$) environment for 5 hours by the square-wave-pulsed-d.c. plasma as a function of temperature $400{\sim}550^{\circ}C$ and pulsation. At the lower temperature range of $400{\sim}500^{\circ}C$ and at the relatively high ratio of pulse duration to pulse period. "S-phase" has been developed in the form of thin nitrided surface layer which has many cracks, leading to be nearly impossible for the industrial anti-wear and anti-corrosion applications. At the higher temperature up to $550^{\circ}C$ with the increasing ratio of the pulse duration to pulse period up to $50{\mu}s/100{\mu}s$, the nitrided layer, whose growth rate has increased also, has been composed mainly of CrN and $Fe_4N$ phases and has become thick, uniform and nearly crack-free.

• ETRI Journal
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• v.25 no.4
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.77-84
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• 1996

Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.348-353
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• 2001

Experimental schemes that enable characterization of phase-change phenomena in the micro scale regime is essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing applications, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse (${\lambda}=248nm,\;FWHM=24\;ns$) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of $0.1{\mu}m\;and\;1\;m/s$, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.8
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• pp.1140-1147
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• 2001

Experimental schemes that enable characterization of phase-change phenomena in the microscale regime are essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing application, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse(λ=248nm, FWHM=24ns) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of 0.1㎛ and 1m/s, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.

• The Journal of Advanced Prosthodontics
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• v.6 no.2
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• pp.96-102
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• 2014

PURPOSE. This study was performed to characterize the effects of zirconia coated with calcium phosphate and hydroxyapatite compared to smooth zirconia after bone marrow-derived osteoblast culture. MATERIALS AND METHODS. Bone marrow-derived osteoblasts were cultured on (1) smooth zirconia, (2) zirconia coated with calcium phosphate (CaP), and (3) zirconia coated with hydroxyapatite (HA). The tetrazolium-based colorimetric assay (MTT test) was used for cell proliferation evaluation. Scanning electron microscopy (SEM) and alkaline phosphatase (ALP) activity was measured to evaluate the cellular morphology and differentiation rate. X-ray photoelectron spectroscopy (XPS) was employed for the analysis of surface chemistry. The genetic expression of the osteoblasts and dissolution behavior of the coatings were observed. Assessment of the significance level of the differences between the groups was done with analysis of variance (ANOVA). RESULTS. From the MTT assay, no significant difference between smooth and surface coated zirconia was found (P>.05). From the SEM image, cells on all three groups of discs were sporadically triangular or spread out in shape with formation of filopodia. From the ALP activity assay, the optical density of osteoblasts on smooth zirconia discs was higher than that on surface treated zirconia discs (P>.05). Most of the genes related to cell adhesion showed similar expression level between smooth and surface treated zirconia. The dissolution rate was higher with CaP than HA coating. CONCLUSION. The attachment and growth behavior of bone-marrow-derived osteoblasts cultured on smooth surface coated zirconia showed comparable results. However, the HA coating showed more time-dependent stability compared to the CaP coating.