• 대한전기학회논문지:시스템및제어부문D
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• 제55권12호
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• pp.550-557
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• 2006

This paper proposes a dry-type surface myoelectric sensor for the myoelectric hand prosthesis. The designed surface myoelectric sensor is composed of skin interface and processing circuits. The skin interface has one reference and two input electrodes, and the reference electrode is located in the center of two input electrodes. In this paper is proposed two types of sensors with the circle- and bar-shaped reference electrode, but all input electrodes are the bar-shaped. The metal material of the electrodes is the stainless steel (SUS440) that endures sweat and wet conditions. Considering the conduction velocity and the median frequency of the myoelectric signal, the inter-electrode distance (IED) between two input electrodes as 18mm, 20mm, and 22mm is selected. The signal processing circuit consists of a differential amplifier with a band pass filter, a band rejection filter for rejecting 60Hz power-line noise, amplifiers, and a mean absolute value(MAV) circuit. Using SUS440, six prototype skin interface with different reference electrode shape and IED is fabricated, and their output characteristics are evaluated by output signal obtained from the forearm of a healthy subject. The experimental results show that the skin interface with parallel bar shape and the 18mm IED has a good output characteristics. The fabricated dry-type surface myoelectric sensor is evaluated for the upper-limb amputee.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 2004년도 추계 학술발표회 논문집
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• pp.133-138
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• 2004

Proton exchange membrane fuel cell (PEMFC) is considered as a clean and efficient energy conversion det ice for mobile and stationary applications. Anions all the components of the PEMFC, the interface between the electrolyte ,and electrode catalyst plays an important role in determining tile cell performance since the electrochemical reactions take place at the interface in contact with tile reactant gases. Therefore, to increase the interface area and obtain a high-performance PEMFC, surface of the electrolyte membrane was roughened by Ar$^{+}$ beam bombardment. The results imply that by modifying surface of the electrolyte membrane, platinum loading can be reduced significantly without performance loss. To optimize the surface treatment condition, effects of ion dose density on characteristics of the membrane/electrode interface were examined by measuring the cell performance, impedance spectroscopy, and cyclic voltammograms. Surface of the modified membranes were characterized using scanning electron microscopy and FT-IR.R.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• 한국표면공학회지
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• 제43권3호
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• pp.132-141
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• 2010

NiTi alloy has been used for orthodontic wire due to good mechanical properties, such as elastic strength and frictional resistance, combined with a high resistance to corrosion. Recently, these wire were coated by polymer and ceramic materials for aesthetics. The purpose of this study was to investigate surface characteristics of polymer coated NiTi alloy wire for orthodontics using various instruments. Wires (round type and rectangular type) were used, respectively, for experiment. Polymer coating was carried out for wire. Specimen was investigated with field emission scanning electron microscopy(FE-SEM), energy dispersive x-ray spectroscopy(EDS) and atomic force microscopy(AFM). The phase transformation of non-coated NiTi wire from martensite to austenite occurred at the range of $14{\sim}15^{\circ}C$, in the case of coated wire, it occurred at the range of $16{\sim}18^{\circ}C$. Polymer coating on NiTi wire surface decreased the surface defects such as scratch which was formed at severe machined surface. From the AFM results, the average surface roughness of non-coated and coated NiTi wire was 13.1 nm, and 224.5 nm, respectively. From convetional surface roughness test, the average surface roughness of non-coated and coated NiTi wire was $0.046{\mu}m$, and $0.718{\mu}m$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.254-255
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• 2005

In this work, the effects of plasma treatment on surface properties of semi conductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, semiconductive silicone rubber surfaces treated with plasma discharge led to and increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. these results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semi conductive silicone rubber.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.530-537
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• 2013

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 하계학술대회 논문집
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• pp.247-249
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• 2007

This paper proposes a dry-type surface myoelectric sensor for the myoelectric hand prosthesis. The designed surface myoelectric sensor is composed of skin interface and processing circuits. The skin interface has one reference and two input electrodes, and the reference electrode is located in the center of two input electrodes. Considering the conduction velocity and the median frequency of the myoelectric signal, the inter-electrode distance (IED) between two input electrodes as 18mm, 20mm, and 22mm is selected. The signal processing circuit consists of a differential amplifier with a band pass filter, a band rejection filter for rejecting 60㎐ power-line noise, amplifier, and a level circuit. Using SUS440, six prototype skin interface with different reference electrode shape and IED is fabricated, and their output characteristics are evaluated by output signal obtained from the forearm of a healthy subject. The experimental results show that the skin interface with parallel bar shape and the 18mm IED has a good output characteristics. The fabricated dry-type surface myoelectric sensor is evaluated for the upper-limb amputee.

• 대한전자공학회논문지
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• 제25권12호
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• pp.1656-1662
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• 1988

Auger depth profiles of various In Ga As P/In P heterojunctions grown by liquid phase epitaxial techniques under different growth conditions such as diffusion temperature, diffusion time and dopants, have been obtained. The surface contaminations of In Ga As have been investigated. We found that the samples with Zn diffusion exhibit significant interface grading phenomena including In depletion, Ga richness and P richness at the In Ga As P/In P interface, and In outdiffusion at the surface. The main surface contamination was found to be due to carbon and oxygen species. It can be suggested that Zn gettering takes a major role in such phenomena as interface grading, in depletion, and Ga and P richness at the interface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.72-72
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• 2011

Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.