Auger Study of LPE Grown In Ga As P/In P Heterostructure

Auger 전자현미경을 이용한 LPE에 의해서 성장된 InGaAsP/InP 이종접합계면에 대한 연구

Auger depth profiles of various In Ga As P/In P heterojunctions grown by liquid phase epitaxial techniques under different growth conditions such as diffusion temperature, diffusion time and dopants, have been obtained. The surface contaminations of In Ga As have been investigated. We found that the samples with Zn diffusion exhibit significant interface grading phenomena including In depletion, Ga richness and P richness at the In Ga As P/In P interface, and In outdiffusion at the surface. The main surface contamination was found to be due to carbon and oxygen species. It can be suggested that Zn gettering takes a major role in such phenomena as interface grading, in depletion, and Ga and P richness at the interface.