• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.15-27
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• 2008

In this paper, an EBG(Electromagnetic BandGap) resonator antenna with a stripline type FSS(Frequency Selective Surface) superstrate for PCS-band base station antennas is proposed. The characteristics of resonant frequency and -3dB bandwidth of a unit cell of a superstrate are first analyzed by varing several design parameters such as a strip width and a unit cell width in order to design an EBG resonator antenna satisfying the required antenna gain and bandwidth for PCS-band base station antennas. Among various unit cell shapes, strip dipole and stripline are considered and their characteristics are compared. It was found that a resonant length of the EBG resonator antenna becomes smaller when the stripline shape is used and the control of the bandwidth is also much easier. By using the unit cell simulation results, planar and cylindrical EBG resonator antennas at PCS-band are designed.

• Journal of Advanced Navigation Technology
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• v.23 no.5
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• pp.415-423
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• 2019

In this paper, a design method for a high-sensitivity microstrip patch sensor antenna (MPSA) loaded with a bent-slot was studied for the permittivity measurement. The bent-slot similar to a single-ring complementary split ring resonator was added along a radiating edge of the patch in order to enhance the sensitivity to the permittivity. The sensitivity of the proposed MPSA was compared with that of a conventional rectangular MPSA and a thin rectangular-slotted MPSA. Three MPSAs were designed and fabricated on a 0.76-mm-thick RF-35 substrate so that the input reflection coefficient would resonate at 2.5 GHz in the absence of the superstrate under test. When five different Taconic substrates with a relative permittivity ranging from 2.17 to 10.2 were used as the superstrate under test, experiment results show that the sensitivity of the proposed MPSA, which is measured by the shift in the resonant frequency of the input reflection coefficient, is 4.1 to 6.1 times higher than that of the conventional MPSA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.3
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• pp.243-253
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• 1997

In land mobile communications, incident waves to mobile antenna com mostly from directions having low elevation angles about $60^{\circ}$ down from the vertical plane. In order to receive this waves effectively, planar type antenna was fabricated and its characteristics were analyzed. This type of antenna is achieved using superstrate effect criteria which are derived for a nonzero radiation field extending down to the substrate layer surface plan. A small planar type microstrip antenna which can receive incident waves having low elevation angle was fabricated. Experimental results show that the band width of the fabricated antenna is 70 MHz at 1.2 GHz and have nonzero field down to the layer surface.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1600-1606
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• 2001

Resonant frequency in rectangular microstrip patch antenna on anisotropic substrates with airgap and superstrate are analyzed. Dyadic Green function is derived for selected anisotropic material by constitutive relation. From these results, integral equations of electric fields are formulated using Fourier transform in space region. The electric field integral equations are discretized into the matrix form by applying Galerkin\`s moment method. Sinusoidal functions are selected as basis functions because they resemble in the actual standing wave on the patch. To verify the validity of numerical result, we compare our result with existing one and get a good agreement between them. From the numerical results, the resonant frequency in the variation of air gap, patch length and anisotropy ratio are presented and analysed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.665-665
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• 2013

박막형 태양전지에서 광흡수층으로 널리 쓰이는 metal chalcogenide 화합물 중, CuInS2(CIS)은 전기적, 광학적 특성이 우수하여 널리 연구되고 있다. CIS계 태양전지 최근 동시 증발법을 이용하여 20.3%의 고효율을 기록한 바 있으나 기존 진공, 고온 기반 공정 기술은 초기 투자 비용이 높고, 고가의 희귀원소인 In 등의 원료 활용도가 떨어져 원가 절감에 있어 한계가 있다. 이에 따라 제조 비용 절감과 원료 사용 효율을 향상시키기 위해 비진공 방식을 이용한 광흡수 층 증착 공정에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 상온, 상압, 저온에서 합성이 가능한 CIS계 광흡수층을 전자 전달 및 빛 포집에 유리한 ZnO 나노구조와 응용함으로써 superstrate 구조의 박막형 태양전지를 구현하고 그 특성을 평가하였다. CIS 박막 태양전지에서 투명창층으로 쓰이는 ZnO 박막을 수열합성법으로 합성된 ZnO 나노로드 어레이로 대체하여 빛 산란 효과를 줄이고, 전하 수집 및 이동 효과를 극대화하였다. 또한 CIS 광흡수층은amine계 용매와 금속염 및 thiourea를 조합하여 저온에서 코팅 후 건조시켜 박막을 제조하였다. 각 요소 박막들의 물성을SEM, XRD, UV-transmittance 분석을 통해 살펴보았으며, 소면적 태양전지 제작을 통해 박막 구조 대비 30배 이상의 광변환효율(최고효율 3.30%)을 기록하였다.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.83.1-83.1
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• 2010

Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.2-46.2
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• 2010

For use of superstrate thin-film solar cells, surface texture of the transparent conductive oxide (TCO) has been used to enhance short-circuit currents by increasing light trapping into the cell. ZnO:Al films were deposited by using DC magnetron sputtering on glass substrates with ceramic (ZnO:$Al_2O_3$) target. The as-deposited TCO before texturing exhibited high transparencies (T > 85% for visible light including all reflection losses) and excellent electrical properties ($r=3-6{\times}10^{-4}{\Omega}.cm$). The optical and electrical properties of the TCO are influenced by the texturing conditions such as not only etchant dilutions but also etching time. We obtained the haze value of 14-16 resulting in increase in light trapping and short-circuit currents also.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.355-358
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• 2003

We report experimental results on the wavelength and polarization selective coupling properties of fiber-to-planar waveguide coupler having a thin metal intermediate layer. The influence of the metal layer thickness and the refractive index of the superstrate on the device properties has been measured and explained. The proposed device exhibited various application possibilities including polarizers, modulators, and sensors.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.134-139
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• 2002

We report an experimental investigation of the wavelength and polarization selectivity of a side-polished fiber in contact with a metal-clad planar waveguide. The influences of the structural parameters of the planar waveguide, including refractive index of the superstrate and metal thickness, on the optical transmission characteristics of the device were measured and explained. The conditions for high wavelength and polarization selectivity wore predicted and demonstrated experimentally.