• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.37-37
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• 2002

Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.72-73
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• 2003

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.9-14
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• 2012

In this study, multi-finger RF MOSFET substrate parameters are accurately extracted by using S-parameters measured from common source-bulk and common source-gate test structures. Using this extraction method, the accuracy of an asymmetrical model with three substrate resistances is verified by observing better agreement with measured Y-parameters than a simple model with a single substrate resistance. The modeled S-parameters of the asymmetrical model also show excellent agreement with measured ones up to 20GHz.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Journal of Welding and Joining
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• v.10 no.4
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• pp.181-189
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• 1992

The purpose of this investigation is to examine the effects of the strengthening treatments on the mechanical properties of the flame-sprayed titania ceramic coating layer. The strengthening treatments for flame sprayed specimens were carried out in 12 different conditions in vaccum furance. The mechanical properties such as microhardness, thermal shock resistance, adhesive strength and erosion resistance were tested for the sprayed specimens after strengthening treatments. And it was clear that the mechanical properties of coating layer were much improved by the strengthening treatments. The results obtained are summarized as follows; 1. It was shown that the metallurgical bond was formed between substrate and coating layer by the strengthening treatments and that thermal shock resistance and adhesive strength were remarkably raised. 2. Microhardness of coating lay was considerably increased by the strengthening treatments. 3. Erosion resistance and porosity of coating layer were slightly improved by the strengthening treatments.

• ETRI Journal
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• v.28 no.1
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• pp.115-118
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• 2006

In this letter, a simple model parameter extraction methodology for an on-chip spiral inductor is proposed based on a wide-band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide-band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using $0.18\;{\mu}m$ CMOS technology.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.472-483
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• 1999

Hard coatings playa continuously increasing role in the field of tribology as well as for decorative applications. In both areas they are often also exposed to corrosive media. While especially hard nitride coatings show a high corrosion resistance for themselves, hard $coating_strate systems may suffer from a severe corrosion attack due to the defects in the coating structure (pores, pinholes) resulting from the PVD-typical film morphology. While a huge number of investigations cover the tribological properties, only limited studies deal with the corrosion behavjour of coating substrate systems and attempts are made to improve their corrosion resistance. The present paper shortly describes the corrosion mechanisms and repots characteristic examples of the system behaviour. Special emphasis is laid on recent investigations to improve the corrosion resistance by alloying, interlayers or multilayered coating structures.es.

• Journal of Microbiology and Biotechnology
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• v.23 no.11
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• pp.1529-1535
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• 2013

Tuberculosis is a worldwide epidemic disease caused by Mycobacterium tuberculosis, with an estimated one-third of the human population currently affected. Treatment of this disease with aminoglycoside antibiotics has become less effective owing to antibiotic resistance. Recent determination of the crystal structure of the M. tuberculosis Rv3168 protein suggests a structure similar to that of Enterococcus faecalis APH(3')-IIIa, and that this protein may be an aminoglycoside phosphotransferase. To determine whether Rv3168 confers antibiotic resistance against kanamycin, we performed dose-response antibiotic resistance experiments using kanamycin. Expression of the Rv3168 protein in Escherichia coli conferred antibiotic resistance against $100{\mu}M$ kanamycin, a concentration that effected cell growth arrest in the parental E. coli strain and an E. coli strain expressing the $Rv3168^{D249A}$ mutant, in which the catalytic Asp249 residue was mutated to alanine. Furthermore, we detected phosphotransferase activity of Rv3168 against kanamycin as a substrate. Moreover, docking simulation of kanamycin into the Rv3168 structure suggests that kanamycin fits well into the substrate binding pocket of the protein, and that the phosphorylation-hydroxyl-group of kanamycin was located at a position similar to that in E. faecalis APH(3')-IIIa. On the basis of these results, we suggest that the Rv3168 mediates kanamycin resistance in M. tuberculosis, likely through phosphotransferase targeting of kanamycin.