• Title/Summary/Keyword: substrate resistance

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Research Trends of Polybenzimidazole-based Polymer Electrolyte Membranes for High-temperature Polymer Electrolyte Membrane Fuel Cells (고온 구동형 고분자 전해질 막 연료전지용 폴리벤즈이미다졸계 고분자 전해질 막의 개발 동향)

  • HyeonGyeong, Lee;Gabin, Lee;Kihyun, Kim
    • Membrane Journal
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    • v.32 no.6
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    • pp.442-455
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    • 2022
  • High-temperature polymer electrolyte membrane fuel cell (HT-PEMFC) has been studied as an alternative to low-temperature PEMFC due to its fast activation of electrodes and high resistance to electrode poisoning by carbon monoxide. It is highly required to develop stable PEMs operating at high temperatures even doped by ion-conducting materials for the development of high-performance and durable HT-PEMFC systems. A number of studies have been conducted to develop polybenzimidazole (PBI)-based PEMs for applications in HT-PEMFC due to their high interaction with doped ion-conducting materials and outstanding thermomechanical stability under high-temperature operation. This review focused on the development of PBI-based PEMs showing high performance and durability. Firstly, the characteristic behavior of PBI-based PEMs doped with various ion-conducting materials including phosphoric acid was systematically investigated. And then, a comparison of the physicochemical properties of the PEMs according to the different membrane manufacturing processes was conducted. Secondly, the incorporation of porous polytetrafluoroethylene substrate and/or inorganic composites to PBI matrix to improve the membrane performances was studied. Finally, the construction of cross-linked structures into PBI-based PEM systems by polymer blending method was introduced to improve the PEM properties.

A Study on the Control of Hygroscopicity and Hardness in Polymer Surfaces (고분자 표면의 흡습성 및 경도 제어 연구)

  • Jinil Kim;Young Nam Jung;Doa Kim;Myung Yung Jeong
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.4
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    • pp.86-90
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    • 2023
  • The packaging of electronic devices performs a protective function to ensure that their durability and reliability are not affected by changes in the operating environment caused by external factors. Recent advances in materials have led to ongoing research into bonded packaging of heterogeneous materials such as polymers and inorganic materials in electronic devices. In this packaging process, it is important to have a binding that joins the materials and ensures the operating environment, which includes adhesion to the substrate, corrosion and oxidation resistance through moisture removal, and durability. In this study, the hygroscopicity of the coating layer by modifying the polymer surface based on PVA was evaluated by controlling and measuring the contact angle, and the adhesion was confirmed by applying water-based ink and testing according to ASTM_D3363. For the durability of the polymer surface, the IPL post-treatment process was used to improve the hardness and toughness against applied voltage, and the pencil hardness test and nanoindentation test were conducted. Through this, we analyzed and proposed solutions to ensure the reliability and durability of polymer devices in polymer microfabrication against environmental factors such as moisture, temperature fluctuations and adhesion, and surface abrasion.

Reliability of Cu Interconnect under Compressive Fatigue Deformation Varying Interfacial Adhesion Treatment (유연소자용 기판과의 접착 특성에 따른 구리 배선의 압축 피로 거동 및 신뢰성)

  • Min Ju Kim;Jeong A Heo;Jun Hyeok Hyun;So-Yeon Lee
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.4
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    • pp.105-111
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    • 2023
  • Electronic devices have been evolved to be mechanically flexible that can be endured repetitive deformation. This evolution emphasizes the importance of long-term reliability in metal wiring connecting electronic components, especially under bending fatigue in compressed environments. This study investigated methods to enhance adhesion between copper (Cu) and polyimide (PI) substrates, aiming to improve the reliability of copper wiring under such conditions. We applied oxygen plasma treatment and introduced a chromium (Cr) adhesion layer to the polyimide substrate. Our findings revealed that these adhesion enhancement methods significantly affect compression fatigue behavior. Notably, the chromium adhesion layer, while showing weaker fatigue characteristics at 1.5% strain, demonstrated superior performance at 2.0% strain with no delamination, outperforming other methods. These results offer valuable insights for improving the reliability of flexible electronic devices, including reducing crack occurrence and enhancing fatigue resistance in their typical usage environments.

Major character analysis of CAX 1 (cation exchanger 1) transgenic rice plants in In Vivo (CAX 1 형질전환체 벼의 In Vivo에서 주요특성 분석)

  • Kim, Kyung-Min
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.54 no.4
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    • pp.375-383
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    • 2009
  • This study was carried out to develop transgenic rice cultivars with the CAX1 (accession no. U57411) gene. We successfully selected the transgenic rice plants over-expressing the Arabidopsis H+/$Ca^{2+}$ antiporter CAX1 (accession no. U57411) gene in T6 generation. The brown rice of the CAX1 expressing rice contained 13.4~68.0 % more calcium $(Ca^{2+})$ than that of the wild type and 5 lines were selected based on the phenotypes compared to the control cultivar at the GMO field. The CAX1 expressing transgenic rice plants were similar in phenotype to the wild type during the whole growth period. Also these selected 4 lines appeared to be resistant to blast, cold and water solution compared with the wild type. Difference in 1,000 grain weight of brown rice was observed among each line but grain shape did not show any morphological alternations. These results suggest the enhanced Ca-substrate specificity of CAX1 exchanger in donor plant. Therefore, intact CAX1 exchanger can be functionally useful for $Ca^{2+}$ nutrient enrichment of rice with reduced accumulation of undesirable cation.

A Study of Mo Back Electrode for CIGSe2 Thin Film Solar Cell (CIGSe2 박막태양전지용 Mo 하부전극의 물리·전기적 특성 연구)

  • Choi, Seung-Hoon;Park, Joong-Jin;Yun, Jeong-Oh;Hong, Young-Ho;Kim, In-Soo
    • Journal of the Korean Vacuum Society
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    • v.21 no.3
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    • pp.142-150
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    • 2012
  • In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam (Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정)

  • Jung K.W.;Lee H.J.;Jung W.H.;Oh H.J.;Park C.W.;Choi E.H.;Seo Y.H.;Kang S.O.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.395-403
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    • 2006
  • It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

Effect of sputtering conditions on the exchange bias and giant magnetoresistance in Si/Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta spin valves (스파터링 조건이 FeMn계 top 스핀 밸브의 exchange bias 및 자기적 특성에 미치는 영향)

  • Kim, K.Y.;Shin, K.S.;Han, S.H.;Lim, S.H.;Kim, H.J.;Jang, S.H.;Kang, T.
    • Journal of the Korean Magnetics Society
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    • v.10 no.2
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    • pp.67-73
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    • 2000
  • Top spin valve samples with a structure Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta were deposited on a Si(100) substrate by changing d.c. magnetron sputtering conditions and the exchange-bias and magnetic properties of samples were investigated. The Exchange field, H$\_$ex/ increased with increase of sputtering power of FeMn from 30 to 150 W and CoFe from 30 to 100 W deposited on the Cu, the increase of H$\_$ex/ was found due to the improvement of preferred orientation of (111) FeMn phase from XRD results. In the case of Cu, H$\_$ex/ decreased with the increase of sputtering pressure ranging from 1 to 5 mTorr. The relationship between exchange field and resistance was investigated, spin valve samples with a large exchange field showed the lower resistance, which was strongly dependent on the good crystallinity and grain size increase as well as lower scattering effects. The Cu thickness was changed from 22 to 38 $\AA$ for Si/Ta/NiFe/CoFe/Cu(t), 30 W/CoFe, 100 W/FeMn, 100 W/Ta spin valve structures, MR ratio of 6.5 % and exchange field of about 190 Oe were obtained for the sample with Cu of 22 $\AA$ thickness. The increase of exchange field with decrease of Cu thickness was explained by FM/AFM spin-spin interaction.

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A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.239-240
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    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

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Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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The characteristic of InGaN/GaN MQW LED by different diameter in selective area growth method (선택성장영역 크기에 따른 InGaN/GaN 다중양자우물 청색 MOCVD-발광다이오드 소자의 특성)

  • Bae, Seon-Min;Jeon, Hun-Soo;Lee, Gang-Seok;Jung, Se-Gyo;Yoon, Wi-Il;Kim, Kyoung-Hwa;Yang, Min;Yi, Sam-Nyung;Ahn, Hyung-Soo;Kim, Suck-Whan;Yu, Young-Moon;Ha, Hong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.5-10
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    • 2012
  • In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.