• 제목/요약/키워드: substrate modeling

검색결과 232건 처리시간 0.022초

CMP 공정에서 연마패드 경도에 따른 연마 특성 변화 분자동력학 연구 (Molecular Dynamics Study on Property Change of CMP Process by Pad Hardness)

  • 권오근;최태호;이준하
    • 반도체디스플레이기술학회지
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    • 제12권1호
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    • pp.61-65
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    • 2013
  • We investigated the wearable dynamics of diamond spherical abrasive during the substrate surface polishing under the pad compression via classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. The pad hardness had a big impact on the wearable dynamics of the abrasive. The moving speed of the abrasive decreased with increasing hardness of the pad. As the hardness decreased, the abrasive was indented into the pad and then the sliding motion of the abrasive was increased. So the pad hardness was greatly influenced on the slide-to-roll ratio as well as the wearable rate.

연마패드 압력에 따른 연마입자 이동속도 변화의 분자동역학적 시뮬레이션 연구 (Molecular Dynamics Simulations Study on Abrasive's Speed Change Under Pad Compression)

  • 이규영;이준하;김태은
    • 한국전기전자재료학회논문지
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    • 제25권7호
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    • pp.569-573
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    • 2012
  • We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

A New Semi-Empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET's

  • Murty, Neti V.L. Narasimha;Jit, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.104-109
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    • 2008
  • A simple and efficient way of modeling backgating in GaAs MESFET's is presented through depletion width modulation of Schottky junction and channel-substrate interface. It is shown semi-empirically that such a modulation of depletion widths causes serious troubles in designing precision circuits since backgating drastically reduces threshold voltage of MESFET as well as drain current. Finally, some of the results are compared with reported experimental results. This model may serve as a starting point for rigorous characterization of backgating effect on various device parameters of GaAs MESFET's.

A Simple Model Parameter Extraction Methodology for an On-Chip Spiral Inductor

  • Oh, Nam-Jin;Lee, Sang-Gug
    • ETRI Journal
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    • 제28권1호
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    • pp.115-118
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    • 2006
  • In this letter, a simple model parameter extraction methodology for an on-chip spiral inductor is proposed based on a wide-band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide-band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using $0.18\;{\mu}m$ CMOS technology.

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1-10 ㎓ 초고주파 패키지용 bonding wire 인덕턴스 특성 측정 (Inductance Characterization of Bonding Wires for 1-10㎓ Radio Frequency Packages)

  • 정태호;지용
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.221-224
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    • 2001
  • In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

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Accurate Formulas for Frequency-Dependent Resistance and Inductance Per Unit Length of On-Chip Interconnects on Lossy Silicon Substrate

  • Ymeri, H.;Nauwelaers, B.;Maex, K.;Roest, D.De;Vandenberghe, S.;Stucchi, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권1호
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    • pp.1-6
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    • 2002
  • A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

Modeling on Hydrogen Effects for Surface Segregation of Ge Atoms during Chemical Vapor Deposition of Si on Si/Ge Substrates

  • Yoo, Kee-Youn;Yoon, Hyunsik
    • Korean Chemical Engineering Research
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    • 제55권2호
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    • pp.275-278
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    • 2017
  • Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

고체 면에 흡착된 박막에서의 분리압력 특성에 관한 연구 (Disjoining Pressures of Nanoscale Thin Films on Solid Substrate)

  • 한민섭
    • 대한기계학회논문집B
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    • 제33권2호
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    • pp.101-106
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    • 2009
  • The disjoining pressure is an important physical property in modeling the small-scale transport phenomena on thin film. It is a very useful definition in characterizing the non-continuum effects that are not negligible in heat and mass transport of the film thinner than submicro-scales. We present the calculated values of disjoining pressure of He, Kr and Xe thin films absorbed on graphite substrate using Molecular Dynamics Simulation (MD). The disjoining pressure is accurately calculated in the resolution of a molecular scale of the film thickness. The characteristics of the pressure are discussed regarding the molecular nature of the fluid system such as molecular diameter and intermolecular interaction parameters. The MD results are also compared with those based on the continuum approximation of the slab-like density profile and the results on other novel gases in the previous study. The discrepancies of the continuum model with MD results are shown in all three configurations and discussed in the view point of molecular features.

Modeling of an embedded carbon nanotube based composite strain sensor

  • Boehle, M.;Pianca, P.;Lafdi, K.;Chinesta, F.
    • Advances in aircraft and spacecraft science
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    • 제2권3호
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    • pp.263-273
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    • 2015
  • Carbon nanotube strain sensors, or so called "fuzzy fiber" sensors have not yet been studied sufficiently. These sensors are composed of a bundle of fiberglass fibers coated with CNT through a thermal chemical vapor deposition process. The characteristics of these fuzzy fiber sensors differ from a conventional nanocomposite in that the CNTs are anchored to a substrate fiber and the CNTs have a preferential orientation due to this bonding to the substrate fiber. A numerical model was constructed to predict the strain response of a composite with embedded fuzzy fiber sensors in order to compare result with the experimental results obtained in an earlier study. A comparison of the numerical and experimental responses was conducted based on this work. The longitudinal sensor output from the model matches nearly perfectly with the experimental results. The transverse and off-axis tests follow the correct trends; however the magnitude of the output does not match well with the experimental data. An explanation of the disparity is proposed based on microstructural interactions between individual nanotubes within the sensor.

Phenol removal by tailor-made polyamide-fly ash composite membrane: Modeling and optimization

  • Vandana, Gupta;Anandkumar, J.
    • Membrane and Water Treatment
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    • 제10권6호
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    • pp.431-440
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    • 2019
  • A novel composite membrane was synthesized using crosslinked polyamide and fly ash ceramic substrate for phenol removal. Glutaraldehyde was used as crosslinker. Characterization shows that synthesized membrane possesses good permeability ($0.184l.m^{-2}.h^{-1}.kPa^{-1}$), MWCO (1.7 kDa), average pore size (1.08 nm) and good chemical stability. RSM was adopted for phenol removal studies. Box-Behnken-Design using quadratic model was chosen for three operating parameters (feed phenol concentration, pH and applied pressure) against two responses (phenol removal, flux). ANOVA shows that model is statistically valid with high coefficient of determination ($R^2$)value for flux (0.9897) and phenol removal (0.9302). The optimum conditions are obtained as pH 2, $46mg.l^{-1}$ (feed phenol concentration) and 483 kPa (applied pressure) with 92.3% phenol removal and $9.2l.m^{-2}.h^{-1}$ flux. Data validation with deviation of 4% confirms the suitability of model. Obtained results reveal that prepared composite membrane can efficiently separate phenol from aqueous solution.