• The Journal of the Convergence on Culture Technology
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• v.6 no.3
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• pp.419-425
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• 2020

In this paper, when a refractive index grating and a gain grating are simultaneously present in a DFB (Distributed Feedback) laser for a 1.55 um wavelength with two mirror surfaces without an anti-reflective coating, an analysis program was developed to determine the beam distribution of the oscillation mode in the longitudinal direction. As the phases of the index and gain gratings on the mirror faces are varied, the lasing gain and the beam profiles |R(z)| and |S(z)| of the lasing mode with the emitted power ratio P_l/P_r are analyzed and examined in case of δL<0. In order to reduce the threshold current of a oscillation mode and enhance the frequency stability, κL should be greater than 8, regardless of the grating phase values at the mirror surface.

• Journal of IKEEE
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• v.25 no.3
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• pp.511-516
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• 2021

The electrical characteristics of AlGaN/GaN/HEMT and MOSHFETs with NiO were studied. The threshold voltage of NiO MOSHFET revealed positive shift of +1.03 V than the -3.79 V of HEMT and negative shift of -1.73 V for SiO₂ MOSHFET. Also, NiO MOSHFET showed better linearity in drain current corresponding to gate voltage and higher transconductance at positive gate voltage than the others. The response of gate pulse with base voltage of -5 V was different for both transistors as HEMT showed 20 % drain current decrease at the frequency range of 0.1 Hz~10 Hz and NiO MOSHFET decreased continuously above 10 Hz.

• Journal of Software Assessment and Valuation
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• v.15 no.1
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• pp.71-78
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• 2019

Lasers for optical broadband communication systems should have excellent frequency selectivity and modal stability. DFB lasers have low lasing frequency shift during high speed current modulation. In this paper, we have developed a simulation software and analysed beam profiles of a lasing mode in longitudinal direction of an 1.55um DFB laser with two mirrors and without anti-reflection coatings, that have both an index- and gain-gratings. As the phases of the index and gain gratings on the mirror faces are varied, the beam profiles |R(z)| and |S(z)| of the lasing mode with the emitted power ratio P_l/p_r are analysed and examined. In order to reduce the threshold current of a lasing mode and enhance the frequency stability, κL should be greater than 8, regardless of the grating phases on the mirror faces.

• Journal of the Korean Recycled Construction Resources Institute
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• v.12 no.2
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• pp.206-213
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• 2024

The present study concerns the inhibition of Calcium Nitrite Inhibitor(Ca(NO₂)₂) in mortar contaminated by chloride ions. Thus, the corrosion resistance and chloride transport were measured for the mortar containing calcium nitrite inhibitor. As a result, an increase in the dosage of calcium nitrite inhibitor resulted in an increase in the chloride threshold concentration for reinforcement corrosion, while the rate of chloride transport was accelerated. However, the calcium nitrite inhibitor could not guarantee the time to corrosion, due to the increased mobility of chlorides. To ensure the passivity of steel, the dosage of calcium nitrite inhibitor must exceed a certain dosage, ranging from 2.0~3.0 % by cement weight.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.160-167
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• 1996

A new pathlength deviation detection technique which is composed of michelson interferometer is described and verified experimentally. The technique uses a sub-threshold biased visible laser diode of 20$\mu$m coherence length as a low-coherent light source. And for zeroth-order fringe(which is the largest among fringes) identification we used a piezoelectric transducer with a large modulation smplitude, which enables without the need of constant velocity scanning, to distinguish reflection surfaces separated by more than 10$\mu$m with a resolution of less than half-wavelength.

• Journal of The Korean Dental Society of Anesthesiology
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• v.9 no.1
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• pp.1-8
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• 2009

Posttraumatic stress disorder(PTSD) is a psychiatric illness that results from exposure to serious threats of injury or death. In addition, dental phobia, which is suggested as a sub-threshold form of PTSD, may result from aversive or painful dental treatment. Patients with PTSD may present greater dental and behavioral challenges than other patients due to their mental illness, neglect of oral hygiene, and their medication. Dentists have to consider the challenges to provide these patients with proper dental treatment.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.1-11
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• 2004

A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.472-477
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• 1987

In order to prevent the short-channel effects due to threshold voltage adjustment implantation in conventional n+ doped silicon gate process, a new approach involving automatic doping of polycide by boron during source and drain implantation is introduced. P-MOSFET devece fabricated by theis approach shows improved short channel characteristics than conventional device with n+ doped gate. Some concerns of adopting this approach in CMOS technology are addressed togetheer with some suggestions.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.8
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• pp.1158-1164
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• 2003

Steady-state structure and acoustic-pressure responses of $H_2$/Air counterflow diffusion flames are studied numerically with a detailed chemistry in view of acoustic instability. The Rayleigh criterion is adopted to judge acoustic amplification or attenuation from flame responses. Steady-state flame structures are first investigated and flame responses to various acoustic-pressure oscillations are numerically calculated in near-equilibrium and near-extinction regimes. The acoustic responses of $H_2$/Air flame show that the responses in near-extinction regime always contribute to acoustic amplification regardless of acoustic-oscillation frequency Flames near extinction condition are sensitive to pressure perturbation and thereby peculiar nonlinear responses occur, which could be a possible mechanism in generating the threshold phenomena observed in combustion chamber of propulsion systems.