• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.16-19
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• 2000

DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5％ at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.15-18
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• 2007

The sub micron sized spherical $MgB_2$ powders were synthesized by spray reaction method. $MgB_2$ tapes with Al addition were fabricated by Powder in Tube (PIT) method. The superconducting property and microstructure of Al doped $MgB_2$ tapes were characterized by X-ray diffraction, optical microscopy and transport measurement under magnetic field. The $J_c$ value of $MgB_2$ tapes was increased with 10 vol. % Al addition. The $J_c$ value of 5,500 A/$cm^2$ and 11,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape without heat treatment, respectively. The $J_c$ value of 8,000 A/$cm^2$ and 33,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c$-B curves show enhancement in $J_c$ (B), which suggests that the microstructure and transport properties of $MgB_2$ tapes have been improved with Al addition.

• Journal of the Korean Society of Food Science and Nutrition
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• v.32 no.6
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• pp.864-869
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• 2003

In order to expand the acceptability of irradiated foods by public, substantial basic data about the change of nutrient contents during irradiation are needed. The nutrient contents and digestibility of macronutrients such as carbohydrates, proteins and lipids in foods are known to be not significantly influenced by irradiation treatment. However, some of the vitamins among micronutrients are susceptible to irradiation to a large extent depending upon the food composition, food process and storage condition. This study was conducted to investigate change of thiamin in chicken breast, and vitamin C in strawberry and mandarine orange after irradiation. The effects of irradiation at frozen or refrigerated state and the effects of cooking such as heating or micron ave on thiamin contents in chicken breast were observed. Irradiation reduced the thiamin content, however, temperature condition during irradiation was much more important factor to the loss of thiamin contents. In strawberry, vitamin C content was significantly affected by original content or the variety rattler than treatments such as irradiation, heating or microwave. These results indicated that the losses of water-soluble vitamins, especially thiamin or vitamin C, are affected by food temperature during irradiation process and variety or composition of foods rallier than irradiation itself, within an acceptable range of irradiation.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.18-24
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• 2019

This study was carried out to investigate the effect of milling of boron (B), which is one of raw materials of $MgB_2$, on the critical current density ($J_c$) of $MgB_2$. B powder used in this study is semi-amorphous B (Pavezyum, Turkey, 97% purity, 1 micron). The size of B powder was reduced by planetary milling using $ZrO_2$ balls (a diameter of 2 mm). The B powder and balls with a ratio of 1:20 were charged in a ceramic jar and then the jar was filled with toluene. The milling time was varied from 0 to 8 h. The milled B powders were mixed with Mg powder in the composition of (Mg+2B), and the powder mixtures were uniaxially pressed at 3 tons. The powder compacts were heat-treated at $700^{\circ}C$ for 1 h in flowing argon gas. Powder X-ray diffraction and FWHM (Full width at half maximum) were used to analyze the phase formation and crystallinity of $MgB_2$. The superconducting transition temperature ($T_c$) and $J_c$ of $MgB_2$ were measured using a magnetic property measurement system (MPMS). It was found that $B_2O_3$ was formed by B milling and the subsequent drying process, and the volume fraction of $B_2O_3$ increased as milling time increased. The $T_c$ of $MgB_2$ decreased with increasing milling time, which was explained in terms of the decreased volume fraction of $MgB_2$, the line broadening of $MgB_2$ peaks and the formation of $B_2O_3$. The $J_c$ at 5 K increased with increasing milling time. The $J_c$ increase is more remarkable at the magnetic field higher than 3 T. The $J_c$ at 5 K and 4 T was the highest as $4.37{\times}10^4A/cm^2$ when milling time was 2 h. The $J_c$ at 20 K also increased with increasing milling time. However, The $J_c$ of the samples with the prolonged milling for 6 and 8 h were lower than that of the non-milled sample.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.179-179
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• 1998

실리콘 집적회로 제조시 sub-micron 의 contact 형성 공정은 질연막 형성 후 이의 식각 및 세정, c contact 실리사이드, 획산방지막, 배선 금속층의 형성 과정올 거치게 된다. 본 연구팀에서는 C.F야f2 헬리 콘 플라즈마훌 이용한 고선택비 contact 산화막 식각공정시 형성된 잔류막충과 오염 손상올 관찰하고 산소 플라즈마 처리와 후속 열처리에 따른 이들의 제거 정도를 관찰하여 이에 대한 결과를 발표하였다. 본 연구메서는 식각 및 후처리에 따라 잔류하는 잔류막과 손상층이 후속 공정인 contact 실리사이드 형 섬에 미치는 영향올 관찰하였다. C C.F바f2 웰리콘 풀라즈마률 이용한 식각시 공정 변수로는 수소가스 첨가, bias voltage 와 과식각 시간 의 효과를 관찰하였으며 다른 조건은 일정하게 하였다 .. Contact 실리사이드로는 Ti, Co-싫리사이드를 선 택하였으며 Piranha cleaning, 산소 플라즈마 처리, 산소 풀라즈마+600 'C annealing으로 각각 후처리된 시 편을 후처리하지 않은 시펀돌과 함께 실리사이드 형성용‘시펀으로 이용하였다 각각 일정 조건에서 동 일 두께의 실리사이드훌 형성시킨 후 4-point probe룰 이용하여 면저황올 측정하였다 후처리하지 않은 시편의 경무 실리사이드 형성은 아주 시펀의 일부분에서만 형성되었으며 후속 세정 및 얼처리훌 황에 따라 실리사이드의 면저항은 감소하여 식각 과정을 거치지 않은 깨끗한 실리콘 웨이퍼위에 실리사이드 를 형성시킨 값(control 값)에 접근하였다. 실리사이드의 면저항값은 식각시 노훌된 실리콘 표면 위에 형 성된 손상충보다는 잔류막에 큰 영향을 받았으며 수소 가스가 첨가된 식각 가스로 식각한 시편으로 형 성한 실리사이드의 면저항값이 손상이 상대적으로 적은 것으로 관찰된 수소훌 첨가하지 않은 식각 가 스로 식각한 시펀 위에 형성된 실리사이드의 면저황에 비해 낮은 값을 나타내었다. 실리사이드의 전기적 륙성에 미치는 손상층의 영향올 좀더 면밀히 관찰하고자 bare 실리콘 wafer 에 잔류막이 거의 없이 손상층을 유발시키는 식각 조건들 (100% HBr, 100%H2, 100%Ar, Cl싸fz)에 대하여 실 리콘 식각을 수행한 후 Co-실리사이드률 형성하여 이의 면저황을 측정한 걸과 100% Ar 가스로 식각된 시편을 이용하여 형성한 실리사이드의 면저항은 control 에 기까운 면저항값올 지니고 따라서 손상층이 실리사이드 형섬메 미치는 영향은 크지 않음을 알 수 있었다. 이상의 연구 결과훌 통해 손상층이 실리사이드의 형성이나 전기적 톡섬에 미치는 영황은 잔류막층 에 의한 영향보다 적다는 것을 알 수 았으며 잔류막층의 두께보다는 성분이나 걸합상태, 특히 식각 및 후처리 후 잔류하는 탄소 싱분과 C-Si 결함에 큰 영향올 받는 것올 알 수 있었다.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.126-132
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• 1992

Experiment has been performed to investigate the thermal and magnetic properties of Mn-ferrite by electrolysis. Using the 0.2%C mild steel as soluble anode and SUS 304 stainless steel as cathode, Mn-ferrite could be made from the sulfuric acid leaching of the wasted manganese dry cell and $MnSO_4$reagent by electrolysis. As the result of X-ray diffraction, thermal analysis and magnetic measurement, Mn-ferrite was the spinel type in $Mn_{x}Fe_{3-x}O_4$ (X=1), the weight loss rate of $Mn_{x}Fe_{3-x}O_4$ were linearly increased up to the $200^{\circ}C$. Ms, Mr and Hc values were decreased with increasing Mn content and heating temperature. When Mn-ferrite was formed by $MnCl_2$reagent electrolysis, Ms values were higher than those formed from the sulfuric acid leaching of the wasted manganese dry cell and $MnSO_4$reagent by electrolysis. In Mn-ferrite, which was formed from the sulfuric acid leaching of the wasted manganese dry cell by electrolysis, Ms and Mr values were higher, Hc values were lower than which was formed by $MnSO_4$ reagent electrolysis at $200^{\circ}C\;and\;300^{\circ}C, while the same values at $100^{\circ}C$. The shape of particles was spherical type, the sizes of them were about $0.1{\mu}m$ sub-micron in $MnSO_4$reagent electrolysis, $0.5{\mu}m$ in the sulfuric acid leaching of the wasted manganese dry cell by electrolysis.

• Carbon letters
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• v.11 no.4
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• pp.279-284
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• 2010

Graphene is one of the most promising materials for many applications. It can be used in a variety of applications not only as a reinforcement material for polymer to obtain a combination of desirable mechanical, electrical, thermal, and barrier properties in the resulting nanocomposite but also as a component in energy storage, fuel cells, solar cells, sensors, and batteries. Recent research at Michigan State University has shown that it is possible to exfoliate natural graphite into graphite nanoplatelets composed entirely of stacks of graphene. The size of the platelets can be controlled from less than 10 nm in thickness and diameters of any size from sub-micron to 15 microns or greater. In this study we have investigated the influence of melt compounding processing on the physical properties of a polyamide 6 (PA6) nanocomposite reinforced with exfoliated graphite nanoplatelets (xGnP). The morphology, electrical conductivity, and mechanical properties of xGnP-PA6 nanocomposite were characterized with electrical microscopy, X-ray diffraction, AC impedance, and mechanical properties. It was found that counter rotation (CNR) twins crew processed xGnP/PA6 nanocomposite had similar mechanical properties with co-rotation (CoR) twin screw processed or with CoR conducted with a screw design modified for nanoparticles (MCoR). Microscopy showed that the CNR processed nanocomposite had better xGnP dispersion than the (CoR) twin screw processed and modified screw (MCoR) processed ones. It was also found that the CNR processed nanocomposite at a given xGnP content showed the lowest graphite X-ray diffraction peak at $26.5^{\circ}$ indicating better xGnP dispersion in the nanocomposite. In addition, it was also found that the electrical conductivity of the CNR processed 12 wt.% xGnP-PA6 nanocomposite is more than ten times higher than the CoR and MCoR processed ones. These results indicate that better dispersion of an xGnP-PA6 nanocomposite is attainable in CNR twins crew processing than conventional CoR processing.

• Polymer(Korea)
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• v.31 no.2
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• pp.168-176
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• 2007

The sub-micron particles of poly ($\gamma-glutamic$ acid) (PGA) containing lysozyme have been prepared using supercritical antisolvent (SAS) precipitation process at various experimental conditions such as pressure, temperature, inner diameter of nozzle, and concentration. As overall results of the application of SAS process to this system, the smaller size powder has been produced as (i) increasing pressure, (ii) decreasing temperature, (iii) decreasing the inner diameter of nozzle, and (iv) decreasing the concentration of PGA and lysozyme. It is found by means of FT-IR analysis that during SAS process, the composition has changed from the original composition of PGA : lysozyme=50 : 50 into PGA : lysozyme=33 : 67 at final product powder. It means that PGA has higher solubility for the mixed solvent of carbon dioxide and dimethyl sulfoxide (DMSO). Due to such difference of solubility, this particle forms the core-shell structure of which the core consists mainly of lysozyme. It is also found that the residual DMSO amount of $7.8\times10^{-3}wt%$ exists inside the powder.

• Journal of Powder Materials
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• v.29 no.1
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• pp.47-55
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• 2022

Tungsten carbide is widely used in carbide tools. However, its production process generates a significant number of end-of-life products and by-products. Therefore, it is necessary to develop efficient recycling methods and investigate the remanufacturing of tungsten carbide using recycled materials. Herein, we have recovered 99.9% of the tungsten in cemented carbide hard scrap as tungsten oxide via an alkali leaching process. Subsequently, using the recovered tungsten oxide as a starting material, tungsten carbide has been produced by employing a self-propagating high-temperature synthesis (SHS) method. SHS is advantageous as it reduces the reaction time and is energy-efficient. Tungsten carbide with a carbon content of 6.18 wt % and a particle size of 116 nm has been successfully synthesized by optimizing the SHS process parameters, pulverization, and mixing. In this study, a series of processes for the high-efficiency recycling and quality improvement of tungsten-based materials have been developed.