• Title/Summary/Keyword: sub-micron

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Multichannel Transimpedance Amplifier Away in a $0.35\mu m$ CMOS Technology for Optical Communication Applications (광통신용 다채널 CMOS 차동 전치증폭기 어레이)

  • Heo Tae-Kwan;Cho Sang-Bock;Park Min Park
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.8 s.338
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    • pp.53-60
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    • 2005
  • Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

Characteristics of Nano Particle Precipitation and Residual Ozone Decomposition for Two-Stage ESP with DBD (배리어 유전체 방전형 2단 전기집진기의 나노입자 집진 및 잔류 오존 제거 특성)

  • Byeon, Jeong-Hoon;Ji, Jun-Ho;Yoon, Ki-Young;Hwang, Jung-Ho
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1678-1683
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    • 2003
  • DBD(Dielectric Barrier Discharge) plasma in air is well established for the production of large quantities of ozone and is more recently being applied to aftertreatment processes for HAPs(Hazardous Air Pollutants). Although DBD high electron density and energy, its potential use as nano and sub-micron sized particle charging are not well known. Aim of this work is to determine design and operating parameters of a two-stage ESP with DBD. DBD and ESP are used as particle charger and precipitator, respectively. We measured particle precipitation efficiency of two-stage ESP and estimated ozone decomposition of both pelletized $MnO_2$ catalyst and pelletized activated carbon. To examine the particle precipitation efficiency, nano and sub-micron sized particles were generated by a tube furnace and an atomizer. AC voltage of $7{\sim}10$ kV(rms) and 60 Hz is used as DBD plasma source. DC -8 kV is applied to the ESP for particle precipitation. The overall particle collection efficiency for the two-stage ESP with DBD is over 85 % under 0.64 m/s face velocity. Ozone decomposition efficiency with pelletized $MnO_2$ catalyst or pelletized activated carbon packed bed is over 90 % when the face velocity is under 0.4 m/s in dry air.

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Chemical vapor deposition of copper thin films for ultra large scale integration (초고집적회로를 위한 구리박막의 화학적 형성기술)

  • 박동일;조남인
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.20-27
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    • 1997
  • We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

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Fabrication of Metallic Particle Dispersed Ceramic Based Nanocomposite Powders by the Spray Pyrolysis Process Using Ultrasonic Atomizer and Reduction Process

  • Choa, Y.H.;Kim, B.H.;Jeong, Y.K.;Chae, K.W.;T.Nakayama;T. Kusunose;T.Sekino;K. Niibara
    • Journal of Powder Materials
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    • v.8 no.3
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    • pp.151-156
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    • 2001
  • MgO based nanocomposite powder including ferromagnetic iron particle dispersions, which can be available for the magnetic and catalytic applications, was fabricated by the spray pyrolysis process using ultra-sonic atomizer and reduction processes. Liquid source was prepared from iron (Fe)-nitrate, as a source of Fe nano-dispersion, and magnesium (Mg)-nitrate, as a source of MgO materials, with pure water solvent. After the chamber were heated to given temperatures (500~$^800{\circ}C$), the mist of liquid droplets generated by ultrasonic atomizer carried into the chamber by a carrier gas of air, and the ist was decomposed into Fe-oxide and MgO nano-powder. The obtained powders were reduced by hydrogen atmosphere at 600~$^800{\circ}C$. The reduction behavior was investigated by thermal gravity and hygrometry. After reduction, the aggregated sub-micron Fe/MgO powders were obtained, and each aggregated powder composed of nano-sized Fe/MgO materials. By the difference of the chamber temperature, the particle size of Fe and MgO was changed in a few 10 nm levels. Also, the nano-porous Fe-MgO sub-micron powders were obtained. Through this preparation process and the evaluation of phase and microstructure, it was concluded that the Fe/MgO nanocomposite powders with high surface area and the higher coercive force were successfully fabricated.

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NON-LTE EFFECTS ON THE H3+ ROVIBRATIONAL POPULATION IN THE JOVIAN IONOSPHERE

  • Kim, Yong-Ha
    • Journal of The Korean Astronomical Society
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    • v.45 no.2
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    • pp.39-48
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    • 2012
  • We investigate non-LTE effects on the $H_3^+$ level populations to help the analysis of the observed 2 and 3.5 micron $H_3^+$ emissions from the Jovian ionosphere. We begin by constructing a simple three-level model, in order to compute the intensity ratio of the R(3,4) line in the hot band to the Q(1,0) line in the fundamental band, which have been observed in the Jovian auroral regions. We find that non-LTE effects produce only small changes in the intensity ratios for ambient $H_2$ densities less than or equal to $5{\times}10^{11}cm^{-3}$. We then construct two comprehensive models by including all the collisional and radiative transitions between pairs of more than a thousand known $H_3^+$ rovibrational levels with energies less than 10000 $cm^{-1}$. By employing these models, we find that the intensity ratios of the lines in the hot and fundamental bands are affected greatly by non-LTE effects, but the details depend sensitively on the number of collisional and radiative transitions included in the models. Non-LTE effects on the rovibrational population become evident at about the same ambient $H_2$ densities in the comprehensive models as in the three-level model. However, the models show that rotational temperatures derived from the intensities of rotational lines in the ${\nu}_2$ and $2{\nu}_2$ bands may differ significantly from the ambie temperatures in the non-LTE regime. We find that significant non-LTE effects appear near and above the $H_3^+$ peak, and that the kinetic temperatures in the Jovian thermospheric temperatures derived from the observed line ratios in the 2 and 3.5 micron $H_3^+$ emissions are highly model dependent.

Synthesis and Sintering Behavior of Zr2WP2O12 Ceramics (Zr2WP2O12 세라믹스의 합성과 소결거동 연구)

  • Kim, Yong-Hyeon;Kim, Nam-Ok;Lee, Sang-Jin
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.586-591
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    • 2012
  • $Zr_2WP_2O_{12}$ powder, which has a negative thermal expansion coefficient, was synthesized by a solid-state reaction with $ZrO_2$, $WO_3$ and $NH_4H_2PO_4$ as the starting materials. The synthesis behavior was dependent on the solvent media used in the wet mixing process. The $Zr_2WP_2O_{12}$ powder prepared with a solvent consisting of D. I. water was fully crystallized at $1200^{\circ}C$, showing a sub-micron particle size. According to the results obtained from a thermal analysis, a $ZrP_2O_7$ was synthesized at a low temperature of $310^{\circ}C$, after which it was reacted with $WO_3$ at $1200^{\circ}C$. A new sintering additive, $Al(OH)_3$, was applied for the densification of the $Zr_2WP_2O_{12}$ powders. The cold isostatically pressed samples were densified with 1 wt% $Al(OH)_3$ additive or more at $1200^{\circ}C$ for 4 h. The main densification mechanism was liquid-phase sintering due to the liquid which resulted from the reaction with amorphous or unstable $Al_2O_3$ and $WO_3$. The densified $Zr_2WP_2O_{12}$ ceramics showed a relative density of 90% and a negative thermal expansion coefficient of $-3.4{\times}10^{-6}/^{\circ}C$. When using ${\alpha}-Al_2O_3$ as the sintering agent, densification was not observed at $1200^{\circ}C$.

A Study of Mechanical Properties and Microstructure of ZrO2-Ag Depending on the Composite Route (ZrO2-Ag의 복합화 공정에 따른 기계적 특성 및 미세조직 평가)

  • Yeo, In-Chul;Han, Jae-Kil;Kang, In-Cheol
    • Journal of Powder Materials
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    • v.19 no.6
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    • pp.416-423
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    • 2012
  • This paper introduces an effect of a preparing $ZrO_2$-Ag composite on its mechanical properties and microstructure. In present study, $ZrO_2$-Ag was prepared by reduction-deposition route and wetting dispersive milling method, respectively. Two type of Ag powders (nano Ag and micron Ag size, respectively) were dispersed into $ZrO_2$ powder during wetting dispersive milling in D.I. water. Each sample was sintered at $1450^{\circ}C$ for 2hr in atmosphere, and then several mechanical tests and analysis of microstructure were carried out by bending test, hardness, fracture toughness and fracture surface microstructure. As for microstructure, the Ag coated $ZrO_2$ showed homogeneously dispersed Ag in $ZrO_2$ in where pore defect did not appear. However, $ZrO_2$-nano Ag and $ZrO_2$-micro Ag composite appeared Ag aggregation and its pore defect, which carried out low mechanical property and wide error function value.

Power-Gating Structure with Virtual Power-Rail Monitoring Mechanism

  • Lee, Hyoung-Wook;Lee, Hyun-Joong;Woo, Jong-Kwan;Shin, Woo-Yeol;Kim, Su-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.2
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    • pp.134-138
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    • 2008
  • We present a power gating turn-on mechanism that digitally suppresses ground-bounce noise in ultra-deep submicron technology. Initially, a portion of the sleep transistors are switched on in a pseudo-random manner and then they are all turned on fully when VVDD is above a certain reference voltage. Experimental results from a realistic test circuit designed in 65nm bulk CMOS technology show the potential of our approach.

Non-Destructive Evaluation of Material Properties of Nanoscale Thin-Films Using Ultrafast Optical Pump-Probe Methods

  • Kim, Yun-Young;Krishnaswamy, Sridhar
    • Journal of the Korean Society for Nondestructive Testing
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    • v.32 no.2
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    • pp.115-121
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    • 2012
  • Exploration in microelectromechanical systems(MEMS) and nanotechnology requires evaluation techniques suitable for sub-micron length scale so that thermal and mechanical properties of novel materials can be investigated for optimal design of miro/nanostructures. The ultrafast optical pump-probe technique provides a contact-free and non-destructive way to characterize nanoscale thin-films, and its ultrahigh temporal resolution enables the study of heat-transport phenomena down to a sub-picosecond regime. This paper reviews the principle of optical pump-probe technique and introduces its application to the area of micro/nano-NDE.

Nanohole Fabrication using FIB, EB and AFM for Biomedical Applications

  • Zhou, Jack;Yang, Guoliang
    • International Journal of Precision Engineering and Manufacturing
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    • v.7 no.4
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    • pp.18-22
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    • 2006
  • Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.