• Title/Summary/Keyword: sub-mask

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Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching (Cl2/HBr/CF4 반응성 이온 실리콘 식각 후 감광막 마스크 제거)

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.353-357
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    • 2010
  • Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

Effect of Fe(ClO4)3 Addition in the Aqueous Ferric Chloride Etchant on the Increase of Shadow Mask Etch Rate (Fe(ClO4)3 첨가제의 주입에 의한 염화제이철 수용액의 Shadow Mask 에칭속도 향상 효과)

  • Kim, Young Wook;Park, Mooryong;Lee, Hyung Min;Park, Gwang Ho;Park, Chinho
    • Korean Chemical Engineering Research
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    • v.48 no.2
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    • pp.157-163
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    • 2010
  • A new etchant formulation was developed in this study to increase the shadow mask production rate, utilizing the $Fe(ClO_4)_3$ as an additive in the aqueous $FeCl_3$ solution. The shadow mask etch rate increased substantially with the increase of $Fe(ClO_4)_3$ concentration in the etchant. The etch rate difference between Ni and Invar steel was also reduced with the addition of $Fe{(ClO_4)_3}$ for most of the operating conditions, which was caused by the enhanced etch rate of both Ni and Fe by the new etchant. The increase in etch rate with the addition of $Fe(ClO_4)_3$ to aqueous ferric chloride solution was attributed to the superior electron transfer capability of $ClO^{4-}$ ion to that of $Cl^-$ ion.

Impact of a simple non-invasive nasal mask device on intraprocedural hypoxemia in overweight individuals undergoing upper gastrointestinal endoscopy with sedation provided by a non-anesthesiologist provider

  • Jan Drews;Jonas Harder;Hannah Kaiser;Miriam Soenarjo;Dorothee Spahlinger;Peter Wohlmuth;Sebastian Wirtz;Ralf Eberhardt;Florian Bornitz;Torsten Bunde;Thomas von Hahn
    • Clinical Endoscopy
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    • v.57 no.2
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    • pp.196-202
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    • 2024
  • Background/Aims: Hypoxemia is a common side effect of propofol sedation during endoscopy. Applying mild positive airway pressure (PAP) using a nasal mask may offer a simple way to reduce such events and optimize the conditions for diagnostic and therapeutic upper gastrointestinal endoscopies. Methods: We compared overweight patients (body mass index >25 kg/m2) with a nasal PAP mask or standard nasal cannula undergoing upper gastrointestinal endoscopies by non-anesthesiologists who provided propofol sedation. Outcome parameters included the frequency and severity of hypoxemic episodes. Results: We analyzed 102 procedures in 51 patients with nasal PAP masks and 51 controls. Episodes of hypoxemia (oxygen saturation [SpO2] <90% at any time during sedation) occurred in 25 (49.0%) controls compared to 8 (15.7%) patients with nasal PAP masks (p<0.001). Severe hypoxemia (SpO2 <80%) occurred in three individuals (5.9%) in both groups. The mean delta between baseline SpO2 and the lowest SpO2 recorded was significantly decreased among patients with nasal PAP mask compared to controls (3.7 and 8.2 percentage points difference, respectively). There were significantly fewer airway interventions performed in the nasal PAP mask group (15.7% vs. 41.2%, p=0.008). Conclusions: Using a nasal PAP mask may be a simple means of increasing patient safety and ease of examination.

Effect of Mask Filter on Respiratory Function in Chronic Stroke Patients (마스크 필터가 만성 뇌졸중 환자의 호흡기능에 미치는 영향)

  • Lee, Yun-Hee;Kum, Dong-Min;Shin, Won-Seob
    • Journal of The Korean Society of Integrative Medicine
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    • v.10 no.1
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    • pp.149-155
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    • 2022
  • Purpose : This study investigated the effects of wearing a mask and different mask filters on the respiratory function of stroke patients. Methods : A total of 15 stroke patients were selected according to the inclusion and exclusion criteria. The respiratory functions were compared between participants with and without masks and among respiratory functions with three different mask filters. The order of using masks was non-wearing masks, Dental masks, KF80 masks, and KF94 masks; the difference in respiratory volumes among these conditions were measured. For accuracy of the measurement, sufficient education on the respiratory measurement method was provided to the researcher, and the heart rate of the participants was estimated to confirm their stability before the measurements. To ensure accuracy, the subjects were educated on the researchers' respiratory measurement methods. Each measurement was followed by 10 min breathing stability before replacing the next mask. Results : The results of this study showed that the difference in respiratory functions, including forced vital capacity (FVC), forced expiratory volume in the first second (FEV1), and maximal voluntary ventilation (MVV), in stroke patients was statistically significant among different masks (p<.05). Afterwards, the values of FVC, FEV1, and MVV in stroke patients wearing masks were significantly lower than those of the non-masked control group (p<.05). The difference in respiratory functions with different mask filters showed no statistical significance (p<.05). Conclusion : This study showed that participants wearing any of the masks presented a lower respiratory function than that of those without using masks; additionally, no difference in respiratory functions was observed with differences in mask filters. Therefore, wearing a mask for a prolonged period is confirmed to affect breathing in stroke patients with weak respiratory function.

Electron Reflecting Layer with the WO3-ZnS:Cu.Al-PbO-SiO2 System Concerned in Doming Property of Shadow Mask in CRT

  • Kim, Sang-Mun;Cho, Yoon-Lae
    • Journal of the Korean Ceramic Society
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    • v.39 no.12
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    • pp.1124-1127
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    • 2002
  • In this paper, we studied the effects of the electron reflection on shadow mask on which the electron reflecting materials with $WO_3-ZnS:Cu.Al-PbO-SiO_2$ system were screen-printed and we evaluated the variation of the electron beam mislanding in CRT. As a result, the green emitted spectra on the electron reflecting layer are observed due to the transformation of the electron energy, when the electron impacted on shadow mask. The beam mislanding is reduced about 40% in comperision with that of CRT made by the conventional method.

Deformation Analysis of a Metal Mask for the Screen Printing of Micro Bumps (스크린 인쇄용 미세 범프 금속마스크의 변형특성 해석)

  • Lee, K.Y.;Lee, H.J.;Kim, J.B.;Park, K.
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.3
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    • pp.408-414
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    • 2012
  • Screen printing is a printing method that uses a woven mesh to support an ink-blocking stencil by transferring ink or other printable materials in order to form an image onto a substrate. Recently, the screen printing method has applied to micro-electronic packaging by using solder paste as a printable material. For the screen printing of solder paste, metal masks containing a number of micro-holes are used as a stencil material. The metal mask undergoes deformation when it is installed in the screen printing machine, which results in the deformation of micro-holes. In the present study, finite element (FE) analysis was performed to predict the amount of deformation of a metal mask. For an efficient calculation of the micro-holes of the metal mask, the sub-domain analysis method was applied to perform FE analyses connecting the global domain (the metal mask) and the local domain (micro-holes). The FE analyses were then performed to evaluate the effects of slot designs on the deformation characteristics, from which more uniform and adjustable deformation of the metal mask can be obtained.

Optical Proximity Correction using Sub-resolution Assist Feature in Extreme Ultraviolet Lithography (극자외선 리소그라피에서의 Sub-resolution assist feature를 이용한 근접효과보정)

  • Kim, Jung Sik;Hong, Seongchul;Jang, Yong Ju;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.3
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    • pp.1-5
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    • 2016
  • In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

A Stdudy on SUS MASK Etching using of FeCl3 (FeCl3를 이용한 SUS MASK 에칭에 관한 연구)

  • Lee, Woo-Sik
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.5
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    • pp.412-418
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    • 2020
  • This paper produced an automatic fluid management system that can accurately control the specific gravity of etching solution(FeCl3), and produced a SUS MASK applied to OLED. The target was set at 0.4 mm in diameter of the hole. As a result of this misconception, the etching speed increased when the specific gravity(S.G) value of FeCl3 was changed from 1.43 to 1.49. And when the weight was 1.49, it was found that the vertical diameter was 0.405 mm, approaching the target. When pressure injection was varied from 2.0kg/cm2 to 3.5kg/cm2, the hole diameter at 3.0 kg/cm2 averaged 0.4mm, matching the target. The characteristics of the change in gravity were analyzed by applying the additive 1.2% and setting the weight at 1.430 by mixing HCl and H2O in FeCl3 and fixing the injection pressure at 3.0 kg/cm2. When the weight changed from 1.460 to 1.469 the etching speed increased from 0.564 to 0.540. When the weight was 1.467, the hole diameter was measured at 0.4 mm and the target was reached.

Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films (가스 센서용 ZnO, SnO2 박막의 이방성 식각을 위한 mask 재료의 식각 선택도 조사)

  • Park, Jong-Cheon;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.164-168
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    • 2011
  • Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.

[Retracted]Gas Mask Removal Efficiency of CO, HCl, HCN, and SO2 Gas Produced by Fire ([논문철회]화재용 방독면의 CO, HCl, HCN, SO2 연소생성물 제거효율)

  • Kong, Ha-Sung;Gong, Ye-Som;Kim, Sang-Heon
    • Fire Science and Engineering
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    • v.29 no.4
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    • pp.57-60
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    • 2015
  • The removal efficiencies by elastic fire gas mask of toxic gases CO, HCl, HCN, and $SO_2$ produced by a fire have a key role in saving lives. The elastic fire gas mask comprises a visible window, elastic hood, gas purification canister, and air vent. It does not have hair or neck thongs, which makes it easy to use and put on quickly. This research examined the removal efficiency of toxic gases by such a mask. The removal efficiencies for CO with a background concentration of 2505.0 ppm were 99.99 and 99.98% after 3.5 and 8.5 min, respectively. The residual CO concentration was drastically increased after 8.5 min. The removal efficiencies for HCl, HCN, and $SO_2$ with background concentrations of 1003.0, 399.0, and 100.3 ppm, respectively, were 100% after 20 min.