• Title/Summary/Keyword: state switching

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2500V IGBTs with Low on Resistance and Faster Switching Characteristic (낮은 온-저항과 빠른 스위칭 특성을 갖는 2500V급 IGBTs)

  • Shin, Samuell;Koo, Yong-Seo;Won, Jong-Il;Kwon, Jong-Ki;Kwak, Jae-Chang
    • Journal of IKEEE
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    • v.12 no.2
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    • pp.110-117
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    • 2008
  • This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

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1 Selector + 1 Resistance Behavior Observed in Pt/SiN/Ti/Si Structure Resistive Switching Memory Cells

  • Park, Ju-Hyeon;Kim, Hui-Dong;Kim, Tae-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.307-307
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    • 2014
  • 정보화 시대로 접어들면서 동일한 공간에 더 많은 정보를 저장할 수 있고, 보다 빠른 동작이 가능한 비휘발성 메모리 소자에 대한 요구가 증가하고 있다. 하지만, 최근 비휘발성 메모리 소자 관련 연구보고에 따르면, 메모리 소자의 소형화 및 직접화 측면에서, 전하 저장을 기반으로 하는 기존의 Floating-Gate(FG) Flash 메모리는 20 nm 이하 공정에서 한계가 예측 되고 있다. 따라서, 이러한 FG Flash 메모리의 한계를 해결하기 위해, 기존에 FET 기반의 FG Flash 구조와 같은 3 terminal이 아닌, Diode와 같은 2 terminal로 동작이 가능한 ReRAM, PRAM, STT-MRAM, PoRAM 등 저항변화를 기반으로 하는 다양한 종류의 차세대 메모리 소자가 연구되고 있다. 그 중, 저항 변화 메모리(ReRAM)는 CMOS 공정 호환성, 3D 직접도, 낮은 소비전력과 빠른 동작 속도 등의 우수한 동작 특성을 가져 차세대 비휘발성 메모리로 주목을 받고 있다. 또한, 상하부 전극의 2 terminal 만으로 소자 구동이 가능하기 때문에 Passive Crossbar-Array(CBA)로 적용하여 플래시 메모리를 대체할 수 있는 유력한 차세대 메모리 소자이다. 하지만, 이를 현실화하기 위해서는 Passive CBA 구조에서 발생할 수 있는 Read Disturb 현상, 즉 Word-Line과 Bit-Line을 통해 선택된 소자를 제외하고 주변의 다른 소자를 통해 흐르는 Sneak Leakage Current(SLC)를 차단하여 소자의 메모리 State를 정확히 sensing하기 위한 연구가 선행 되어야 한다. 따라서, 현재 이러한 이슈를 해결하기 위해서, 많은 연구 그룹에서 Diodes, Threshold Switches와 같은 ReRAM에 Selector 소자를 추가하는 방법, 또는 Self-Rectifying 특성 및 CRS 특성을 보이는 ReRAM 구조를 제안 하여 SLC를 차단하고자 하는 연구가 시도 되고 있지만, 아직까지 기초연구 단계로서 아이디어에 대한 가능성 정도만 보고되고 있는 현실 이다. 이에 본 논문은 Passive CBA구조에서 발생하는 SLC를 해결하기 위한 새로운 아이디어로써, 본 연구 그룹에서 선행 연구로 확보된 안정적인 저항변화 물질인 SiN를 정류 특성을 가지는 n-Si/Ti 기반의 Schottky Diode와 결합함으로써 기존의 CBA 메모리의 Read 동작에서 발생하는 SLC를 차단 할 수 있는 1SD-1R 구조의 메모리 구조를 제작 하였으며, 본 연구 결과 기존에 문제가 되었던 SLC를 차단 할 수 있었다.

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Improvement of colored thread algorithm for network reachability test (칼라 스레드 알고리즘을 이용한 네트워크 도달성 검사)

  • Kim, Han-Kyoung;Lee, Kwang-Hui
    • Journal of Internet Computing and Services
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    • v.10 no.5
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    • pp.27-32
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    • 2009
  • Colored thread algorithm, suggested to be used for the label switching network, needs to be modified for the packet switching network. In this paper, it is recommended to add a merged state, besides the 3 states - null, colored and transparent - which are resulted from the behaviors of extend, rewind, stall, withdraw and merge events. The original colored thread algorithm is designed to generate a new thread and extend it to the downstream direction with unknown hop count when the thread has revisited the node that was visited. It also suggested rewinding the thread to the downstream direction by the source node, instead of rewinding it upstream direction by the revisited node. If a node received multiple threads which had a same forward equivalent class, then it checks first whether the hop counts are ascending or not. If it is in ascending order, then threads are merged. Otherwise the later thread is stalled until the former thread's color is to be changed to transparent or it is removed. This idea removes the effort of generating a new thread with unknown hop count.

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An Empirical Study on Intentions to Use of Smart TV (스마트 TV 이용의도에 관한 실증 연구)

  • Lee, Dong-Gun;Lee, Sang-Joon;Choi, Beom-Jin
    • Journal of Digital Convergence
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    • v.10 no.4
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    • pp.107-118
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    • 2012
  • Smart TV is expected to take the center stage of the recent "smartization" trend in IT and consumer electronics as it performs a hub for various smart IT devices, such as smart phone, smart pad, PC, etc. It is distinct from traditional TVs or even IPTVs in the sense that it provides immersive and interactive experiences via apps downloaded through TV app store. Smart TV could serve as a new intermediary device between other smart devices and the Internet. While it started experiencing a rapid growth, little research has been conducted to understand this emerging technology in terms of its user acceptance and adoption by users. The current research attempts to fill the gap in the field by examining factors and processes for this new technology to be adopted by users. This paper draws on theories of IT acceptance and use, such as the "Unified Theory of Acceptance and Use of Technology", to investigate factors affecting "intention to use" of smart TV. The proposed research model is analyzed using the structural equation modeling approach. Findings show that such factors as innovativeness, switching cost, switching benefit, service interface, and user interface affect users' intention to use smart TV, through effort expectation, performance expectation, and social influence. Theoretical and managerial implications are discussed.

Splay Elastic Constants Dependent Electro-Optic Characteristics of the Fringe Field Switching (FFS) Mode using the Liquid Crystal with Positive Dielectric Anisotropy (양의 액정을 이용한 FFS모드에서 Splay Elastic Constant에 따른 전기-광학적 특성 연구)

  • Jung, Jun-Ho;Park, Ji-Woong;An, Young-Joo;Kim, Mi-Young;Lee, Hee-Kyu;Lee, Seung-Eun;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.469-470
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    • 2008
  • We have studied electro-optic characteristics as a function of splay elastic constants ($K_{11}$) in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. When $K_{11}$ is increased from 7.7pN to 11.7pN, a maximum transmittance is slightly increased and rising time become a little bit fast. However, operating voltage and threshold voltage is independent. In opposition to rising time, decay time is not affected by $K_{11}$. We already know that $K_{11}$ affects tilt angle of liquid crystals. Therefore, on the occasion of high $K_{11}$, liquid crystals are mainly affected by twist deformation because the higher $K_{11}$, the less tilt angle. In the FFS device, high $K_{11}$ is favorable to reduce tilt angle in on state and thus improve rising response time.

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High Speed Interconnetion Network for Interworking Gateway of Heterogeneous Networks (이종망간의 상호연동 거이트웨이 시스템을 위한 내부고속연동망)

  • Kim, Dong-Won;Sin, Hyeon-Sik;Ryu, Won;Lee, Hyun-Woo;Jun, Kyung-Pyo;Bae, Hyeon-Deok
    • The Transactions of the Korea Information Processing Society
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    • v.4 no.2
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    • pp.499-514
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    • 1997
  • This paper proprses the architeecture of an interconnection network for Advanced Information Communi-cation Procssing System(AICPS)developde for prividing open information communication servies on a variety of heterogeneous networks.The proposed Interconnection network,called High Speed Swiching Fabric(HSSF),has been designed by a common bus.It can handile 32 i/O channels,each of which uses serial communication method using 100Mbps TAXI.The switching bandwidth of the common bus is 640Mvps.Each I/O channel can be alloted about 20Mbps bandwidth in steady state,and therefore it's sufficient bandwidth is able to interwork with ISDN and Internet services, as well as PSTN. HSSF is composed of the switching board assembly,the subscriber,I/O board assemly,and the backplane board assembly.An attached node takes in the network adapter board assembly to adapt the high speed interworking protocol.For reliability,HSSF is duplicated with load-sharing method.

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Stabilization of Output Pulses from a Passively Q-switched Nd:YVO4 Laser Pumped by a Continuous-wave Laser Diode (연속 발진 다이오드 레이저로 여기된 수동형 Q-스위치 Nd:YVO4 레이저의 출력 펄스 안정화)

  • Ahn, Seung-In;Park, Yune-Bae;Yeo, Hwan-Seop;Lee, Joon-Ho;Lee, Kang-In;Yi, Jong-Hoon
    • Korean Journal of Optics and Photonics
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    • v.20 no.5
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    • pp.276-280
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    • 2009
  • A Cr:YAG crystal was used as a saturable absorber for passive Q-switching of a Nd:$YVO_4$ laser which was pumped by a 1-W continuous wave laser diode. The first surface of the Cr:YAG was high-reflection coated for the pump wavelength. The high-reflection coating improved the absorption efficiency of the pump beam in the Nd:$YVO_4$ through double pass absorption. It also prevented pump beam induced partial bleaching of the Cr:YAG. The peak-to-peak pulse fluctuation of passively Q-switched laser output was approximately 4 %. The minimum pulse-width was measured to be 7.11 ns. Also, the average pulse repetition rate was 9 kHz and the maximum output power was 16.27 mW.

Bioequivalence Approaches for Highly Variable Drugs: Issue and Solution (개체 변이가 큰 약물 (highly variable drug)의 생물학적동등성 시험을 위한 실험설계 및 평가방법)

  • Baek, In-Hwan;Seong, Soo-Hyeon;Kwon, Kwang-Il
    • Korean Journal of Clinical Pharmacy
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    • v.19 no.1
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    • pp.50-60
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    • 2009
  • Highly variable drugs (within-subject variability greater than 30%) have been difficult to meet current regulatory acceptance criteria using a reasonable number of study subjects. In this study, we reviewed previous studies presenting alternative approaches for bioequivalence evaluation of highly variable drugs, and focused on an approach for widening the bioequivalence acceptance limits using within-subject variability. We discussed the suggested five solutions for highly variable drug including the deletion of $C_{max}$ of the bioequivalence criteria, direct expansion of bioequivalence limit, multiple dose studies in steady state, bioequivalence assessment on the metabolite, add-on study, and widening the bioequivalence acceptance limits based on reference variability. The methods for widening of bioequivalence limits based on reference variability are scaled average bioequivalence containing within-subject variability on reference drug (${\sigma}_{WR}$), population bioequivalence derived from total variability on reference drug (${\sigma}_{TR}$) and test drug (${\sigma}_{TT}$), and individual bioequivalence derived from subject by formulation interaction variability (${\sigma}_D$) and within subject variability on reference drug (${\sigma}_{WR}$) and test drug (${\sigma}_{TR}$). To apply these methods, the switching variability (${\sigma}_0$) will have to be set by the regulatory authorities. The proposals of bioequivalence evaluation approach for the highly variable in Korea are presented for both of new drug and reevaluation drug.

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Operational Characteristics of the High-speed Interrupter for Reliability Enhancement of Power Supply and Demand (전력수급의 신뢰도 확보를 위한 고속 인터럽터 동작 특성)

  • Choi, Hye-Won;Choi, Hyo-Sang;Jung, Byung-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.1
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    • pp.143-148
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    • 2013
  • When the fault occurs in power system, the fault-current exceeds breaking capacity of the circuit breaker. So, reliablity of the power system is decreased sharply. Superconducting fault-current limiter (SFCL) is operated without impedance in normal state. The fault-current is limited by its impedance during the fault condition. However, the SFCL has several weak points such as huge size, high-price, liquid-nitrogen operation for the real power system. In this paper, We suggested the high-speed interrupter to limit the fault-current in case of the single line-to-ground fault. In addition, we compared the high-speed interrupter with the SFCL to ensure the operation reliability. The proposed interrupter detected the fault-current through the CT, and the power was supplied by operation of the SCR control system. In this experiment, the power of high-speed interrupter was applied after the 4.8[msec] from fault instant. The on-off operation of the interrupter was started after half-cycle from the fault. The fault-current was flowed into the impedance element by the switching operation of the high-speed interrupter. So, the fault current was limited within one cycle, and then it didnt exceed the capacity of a circuit breaker. We confirmed that there was slight difference between the SFCL with high-speed interrupter in terms of limiting-time of the fault-current and switching speed of the SCR. The high-speed interrupter was considered to be more efficient than the SFCL in size, cost or reliability.

Series Load Resonant High Frequency Inverter with ZCS-PDM Control Scheme for Induction-Heated Fusing Roller

  • Sugimura, Hisayuki;Kwen, Soon-Kurl;Koh, Kang-Hoon;Lee, Hyun-Woo;Nakaoka, Mutsuo
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2005.11a
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    • pp.415-420
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    • 2005
  • This paper presents the two lossless auxiliary inductors-assisted voltage source type half bridge (single ended push pull: SEPP) series resonant high frequency inverter for induction heated king roller in copy and printing machines. The simple high-frequency inverter treated here can completely achieve stable zero current soft switching (ZCS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZCS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this voltage source SEPP ZCS-PDM series resonant high frequency inverter using IGBTs are illustrated as compared with computer simulation results and experimental ones. Its power losses analysis and actual efficiency are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proved from the practical point of view.

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