• Journal of Powder Materials
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• v.23 no.1
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• pp.1-7
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• 2016

Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are $700^{\circ}C$ and $80^{\circ}C/min$, respectively. The heating directly progresses up to $700^{\circ}C$ with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of $700^{\circ}C$ without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to $700^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.11-15
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• 2016

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.231-232
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• 2007

Nickel oxide thin films were deposited by the DC magnetron reactive sputtering process under the conditions such as various oxygen flow rates(0, 3, 6, 8, 10 sccm) with constant 33 sccm argon flow rate for the sputtering time of 40 second with the power of 0.3 kW. Sheet resistances were measured by the four point probes. In order to observe discharge voltage characteristics according to the oxygen flow rates, the sputtering processes were performed under the powers of 0.2kW and 0.3kW. The feasibility of the coating system for high quality ferromagnetic thin films was tested through the electromagnetic simulation and the thin film thickness measurement from the experiment. It was shown that a discharge voltage was decreased under the low power and low oxygen flow rate, since the oxygen was quickly saturated on nickel target surface. The sheet resistance was increased as oxygen flow rate increased. The film thickness deposited by the coating system for ferromagnetic target was improved approximately 10% in comparison with previous coating systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.412-413
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• 2007

We report on the electrical, optical, and structural properties of indium zinc tin oxide (IZTO) anode films grown at room temperature on glass substrate. The IZTO anode films grown by a RF magnetron sputtering were investigated as functions of RF power, working pressure, and process time in pure Ar ambient. To investigate electrical, optical and structural properties of IZTO anode films, 4-point probe, Hall measurement, UV/Vis spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM), and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $13.88\;{\Omega}/{\square}$, average transmittance above 80 % in visible range were obtained from optimized IZTO anode films grown on glass substrate. These results shown the amorphous structure regardless of RF power and working pressure due to low substrate temperature.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1287-1299
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• 2023

A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.428-430
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• 2009

C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.10-12
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• 2003

NBCO thin films have been fabricated by magnetron sputtering technique on heated $SrTiO_3$ substrates. The oxidation and crystallization of the films were strongly dependent on the distance between the targets and the substrate, as well as on the oxygen partial pressure. The critical temperatures were above 80K for the films prepared under the condition of a small target to substrate gap, in spite of a very low oxygen pressure of 0.2Pa. The results suggest the importance of the activated oxygen uptake into the films during sputtering.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.655-658
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• 2007

Characteristics of Al cathode films deposited by using specially designed twin target sputter (TTS) system were investigated. It was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature and OLEDs fabricated using TTS system have low leakage current density at reverse bias because of effective confinement of energetic particles during sputtering process.