• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.313-313
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• 2009

OLED 소자는 직접발광, 광시야각, 그리고 빠른 응답속도 때문에 동영상에 적합하여 최근 각광받고 있는 디스플레이장치 중의 하나이다. OLED 소자의 양극재료로는 높은 광투과율과 $\sim10^{-4}{\Omega}\;cm$ 수준의 낮은 전기 비저항을 갖는 ITO (Sn-doped $In_2O_3$)가 널리 사용되고 있다. 하지만 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 액정디스플레이의 투명전극으로 사용될 경우 $400\;^{\circ}C$정도의 높은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 반면에 Al이 도핑 된 ZnO (AZO)박막은 넓은 밴드갭 (3.37eV)와 400nm에서 700nm 사이의 가시광 영역에서 80% 이상의 우수한 투과성을 지니고 있다. 특히 Al이 도핑된 ZnO는 박막의 전기적 특성이 크게 향상되어 디스플레이나 태양전지로의 응용이 가능하다. 또한 비교적 낮은 비용과 플라즈마에서의 안정성, 무독성, 그리고 전기전도성과 같은 많은 이점이 있다. 그 결과 AZO 박막은 ITO기판을 대안하는 지원물질로 활발히 연구가 진행되고 있다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기에 따른 OLED 소자의 특성을 분석하였다. ITO와 AZO 박막은 챔버 내 다양한 가스 분위기(Ar, Ar+$O_2$ and Ar+$H_2$)에서 R.F Magnetron Sputtering방법으로 증착하였다. TCO 박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석하였다. 광학적 투과도와 박막의 두께는 ultraviolet spectrophotometer (Varian, cary-500)와 surface profile measurement system으로 각각 측정하였다. 면저항 charge carrier 농도, 그리고 TCO 박막의 이동도와 같은 전기적특성은 four-point probe와 hall effect measurement(HMS-3000)로 각각 측정하였다. TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 화학에칭 하였다. 미세사이즈 패턴 마스크가 사용되었으며 에칭의 깊이는 에칭시간에 따라 조절하였다. TCO 박막의 표면 형태는 FESEM과 AFM으로 관찰하였다. 투명전극으로 사용되는 ITO 및 AZO 기판 상용화를 위해 ITO 및 AZO 기판 위에 ${\alpha}$-NPB, Alq3, LiF, Al 의 순서로 증착 및 패터닝함으로써 OLED 소자를 제작하였다. 전류밀도와 전압 그리고 발광휘도와 전압과 같은 전기적 특성은 spectrometer(minolta CS-1000A)를 이용하여 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.66-66
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• 2008

본 연구에서는 ITO/Ag/ITO 다층 박막을 유기발광소자와 플렉시블 광전소자의 전극으로 적용하기 위하여 선형 대항 타겟 스퍼터(Linear facing target sputter) 시스템을 이용하여 성막하였고, ITO/Ag/ITO 다층박막의 전기적, 광학적, 구조적 특성을 분석하였다. 선형 대항 타겟 스퍼터 시스템은 강한 일방항의 자계와 타겟에 걸린 음극에 의해 전자의 회전, 왕복 운동이 가능해 마주보는 두 ITO 타겟 사이에 고밀도의 플라즈마를 구속 시켜 플라즈마 데미지 없이 산화물 박막을 성막시킬 수 있는 장치이다. 대항 타겟 스퍼터 시스템을 이용하여 성막한 ITO 전극을 DC power, working pressure, Ar/O2 ratio 에 따른 특성을 각각 분석하였다. glass 기판위에 최적화된 ITO 전극을 bottom layer로 두고, bottom ITO layer 위에 thermal evaporation 을 이용하여 Ag 박막을 6~20nm의 조건에 따라 두께를 다르게 성막하고, Ag 박막을 성막한 후에 다시 bottom ITO 전극과 같은 조건으로 ITO 전극을 top layer로 성막 하였다. 두 비정질의 ITO 전극 사이에 매우 앓은 Ag 박막을 성막 함으로 해서 glass 기판위에 ITO/Ag/ITO 다층 박막전극은 매우 낮은 저항과 높은 투과도를 나타낸다. ITO/Ag/ITO 박막의 전기적 광학적 특성을 보기 위해 hall measurement와 UV/visible spectrometer 분석을 각각 진행하였다. ITO/Ag/ITO 다층 박막 전극이 매우 얇은 두께임에도 불구하고 $4\Omega$/sq.의 낮은 면저항과 85%의 높은 투과도를 나타내는 이유는 ITO/Ag/ITO 전극 사이에 있는 Ag층의 표면 플라즈몬 공명 (SPR) 현상으로 설명할 수 있다. ITO/Ag/ITO 전극의 Ag의 거동을 분석 하기위해 FESEM분석과 synchrotron x-ray scattering 분석을 하였다. ITO/Ag/ITO 전극의 Ag층이 islands의 모양에서 연속적으로 연결되는 변화과정 중에 SPR현상이 일어남을 알 수 있다. 여기서, 대항 타겟 스퍼터 시스템을 이용하여 성막한 ITO/Ag/ITO 다층박막을 OLED 또는 inverted OLEDs의 top 전극으로의 적용 가능성을 보이고 있다.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.13-16
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• 2013

A lot of various researches have been going on to use heat spreader for LED module. Nano porous aluminum anodic oxide (AAO) applied LED, which is produced from anodization, is easy and economically advantageous. Convensional LED module is consist of aluminum/adhesive/copper circuit. The polymer adhesive in this module is used as heat spreader. However the thermal emission of LED component is degraded because of low heat conductivity of polymer and also reliability of LED component is reduced. Therefore, AAO in this work was applied to heat spreader of LED module which has higher heat conductivity compare to polymer. Bonding strength between AAO and copper circuit was improved with Ti/Cu seed layer by copper sputtering process (DBC) before the bonding. And this copper circuit has been fabricated by electro plating method. Peel strength of AAO and copper circuit in this work showed range between 1.18~1.45 kgf/cm with anodizing process which is very suitable for high power LED application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.71-79
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• 1995

For the fabrication of high sensitive intrinsic fiber optic Fabry-Perot interferometeric sensor, the deposition conditions of $TiO_{2}$ thin film used to the internal mirrors of the sensor were investigated. The $TiO_{2}$ film deposited by RF magnetron sputter had higher refractive index ($2.36{\sim}2.48$) and better stoiciometry (O/Ti = 2) than that deposited bye-beam evaporator. In the case of forming $TiO_{2}$ internal mirror by using fusion splicing technique, the $TiO_{2}$ reflection mirror deposited by RF magnetron sputter in the condition of 120W RF power showed high. reflectance and excellent controllability of reflection power. The fabricated intrinsic fiber optic Fabry-Perot interferometer with two $TiO_{2}$ internal mirrors deposited under the condition showed very stable fringe patterns. It is, therefore, expected that the interferometer will be applicable to various high precision sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.291-298
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• 2020

ZITO/Ag/ZITO multilayer transparent electrodes at room temperature on glass substrates were prepared using RF/DC magnetron sputtering. Transparent conductive films with a sheet resistance of 9.4 Ω/㎡ and a transmittance of 83.2% at 550 nm were obtained for the multilayer structure comprising ZITO/Ag/ZITO (100/8/42 nm). The sheet resistance and transmittance of ZITO/Ag/ZITO multilayer films meant that they would be highly applicable for use in polymer-dispersed liquid crystal (PDLC)-based smart windows due to the ability to effectively block infrared rays (heat rays) and thereby act as an energy-saving smart glass. Effects of the thickness of the PDLC layer and the intensity of ultraviolet light (UV) on electro-optical properties, photopolymerization kinetics, and morphologies of difunctional urethane acrylate-based PDLC systems were investigated using new transparent conducting electrodes. A PDLC cell photo-cured using UV at an intensity of 2.0 mW/c㎡ with a 15 ㎛-thick PDLC layer showed outstanding off-state opacity, good on-state transmittance, and favorable driving voltage. Also, the PDLC-based smart window optimized in this study formed liquid crystal droplets with a favorable microstructure, having an average size range of 2~5 ㎛ for scattering light efficiently, which could contribute to its superior final performance.

• Journal of the Korean Applied Science and Technology
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• v.34 no.4
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• pp.705-716
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• 2017

In this study, Indium-Titanium hydroxide particle with 0.5, 1.0, 1.5 wt% of $TiO_2$ were synthesized by sol process and adding the base, ITiO(Indium Titanium Oxide) particles were obtained by gelling at $200^{\circ}C$ and $500^{\circ}C$. The ITiO particle's size with gel process at $200^{\circ}C$ was smaller than ITiO particle's size with gel process $500^{\circ}C$. The ITiO particle with gel process at $200^{\circ}C$ was used to fabricate dense ITiO target. ITiO targets with 0.5, 1.0, 1.5 wt% of $TiO_2$ were fabricated and used to obtain ITiO thin films onto glass by sputtering. Among those sputtered ITiOs' thin films, ITiO thin film with 0.4 % of $O_2$ and 0.5 wt% of $TiO_2$ showed the lowest specific resistance, highest charge mobility and lowest carrier concentration. It was found the light transmittance of the ITiO film were increased highly compared to light transmittance of ITO (Indium Tin Oxide) thin film over Infrared wavelength ranges.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.37-42
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• 2021

The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.23-32
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• 2003

The spectroe-ellipsometric constant $\Delta$, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change $Ge_2Sb_2Te_5(GST)$ thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18$0^{\circ}C$). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18$0^{\circ}C$ is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15$0^{\circ}C$ of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.