• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.969-973
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• 2009

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.327-332
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• 2010

We report on the effect of PET substrate preheating on the characteristics of the flexible and transparent indium tin oxide (ITO) electrode grown by a specially designed roll-to-roll sputtering system for touch panel applications. It was found that electrical and optical properties of the roll-to-roll sputter grown ITO film were critically dependent on the preheating of the PET substrate. In addition, the roll-to-roll sputter-grown ITO film after post annealing test at $140^{\circ}C$ for 90 min showed stable electrical and optical properties. The low sheet resistance and high optical transmittance of the ITO film grown on the preheated PET substrate demonstrate that the preheating process before ITO sputtering is one of the effective way to improve the characteristics of ITO/PET film. Furthermore, the superior flexibility of the ITO electrode grown on the preheated PET substrate indicates that the preheating treatment is a promising technique to obtain robust ITO/PET sample for touch panel applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.146-147
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• 2008

In this paper we report upon an investigation into the effect of sputter RF power on the electrical properties of Gallium doped zinc oxide (ZnO:Ga) film. Structural, electrical and optical properties of the ZnO:Ga films were investigation in terms of the sputtering power. Working pressure fixed in 5 mtorr and RF powers the variable did with 50~100 W. The result, We were able to without substrate temperature obtain resistivity of $9.3\times10^{-4}{\Omega}cm$ and optical transmittance of 90%.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.704-710
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• 2000

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• 한국표면공학회지
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• 제32권3호
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• pp.307-311
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• 1999

The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.488-493
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• 2023

The effect of sputtering power on the amorphous Ga₂O₃ thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga₂O₃ is cheaper and more efficiently fabricated than crystalline Ga₂O₃, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga₂O₃ was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga₂O₃ can be obtained by adjusting the sputtering power, it indicates amorphous Ga₂O₃ can be used in various fields.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.886-890
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• 2010

The polytetrafluoroethylene (PTFE) films are deposited on glass using conventional rf-magnetron sputtering method. Their hydrophobic properties are investigated for application as an anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films largely depends on the sputtering conditions, such as Ar gas flow and deposition time during sputtering process. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-spluttered PTFE films. In particular, the PTFE film with 1950 nm thickness deposited for 30 minute at rf-power 50 W shows a very excellent optical transmittance of over 90% and a good anti-fouling property and a good durability.

• Journal of Electrical Engineering and Technology
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• 제1권1호
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• pp.110-113
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.