Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical and Optical Properties of SiO2-doped ZnO Films Prepared by Rf-magnetron Sputtering System

Rf-magnetron Sputtering 장치에 의해 제작된 SiO2가 도핑된 ZnO 박막의 전기적 및 광학적 특성

  • Published : 2009.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

Keywords

References

  1. T. Minami, T. Kakumu, and S. Takata, 'Preparation of transparent and conductive $In_2O_3-ZnO$ films by radio frequency magnetron sputtering', J. Vac. Sci. Tech. A, Vol. 14, Iss. 3, p. 1704, 1996 https://doi.org/10.1116/1.580323
  2. 정윤환, 진호, 김호걸, 박춘배, '수소 분위기에서 후열처리한 상온증착 ZnO:A1 박막의 전기적 특성 분석', 전기전자재료학회논문지, 22권, 4호, p. 318, 2009 https://doi.org/10.4313/JKEM.2009.22.4.318
  3. A. Kaijou, M. Ohyama, M. Shibata, and K. Inoue, 'Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material', U. S. Patent, No. 5,972,527, 1999
  4. R. K Jain and R. C. Lind, 'Degenerate four-wave mixing in semiconductor-doped glasses', J. Opt. Soc. Am., Vol. 73, No. 5, p. 647, 1983 https://doi.org/10.1364/JOSA.73.000647
  5. S. H. Park, H. M. Kim, B. R. Rhee, and E. Y. Gho, 'Effects of oxygen concentration on characteristics of RF-sputtered $In_2O_3-ZnO$ thin films', Jpn. J. Appl. Phys., Vol. 40, No. 3A, p. 1429, 2001 https://doi.org/10.1143/JJAP.40.1429
  6. H. M. Kim, S. K. Jeung, J. S. Ahn, Y. J. Kang, and C. K. Je, 'Electrical and optical properties of $In_2O_3-ZnO$ films deposited on polyethylene terephthalate substrates by radio frequency magnetron sputtering', Jpn. J. Appl. Phys., Vol. 42, No. 1, p. 223, 2003 https://doi.org/10.1143/JJAP.42.223
  7. K. Noda, H. Sato, H. Itaya, and M. Yamada, 'Characterization of Sn-doped $In_2O_3$ film on roll-to-roll flexible plastic substrate prepared by DC magnetron sputtering', Jpn. J. Appl. Phys., Vol. 42, No. 1, p. 217, 2003 https://doi.org/10.1143/JJAP.42.217
  8. 손선영, 김화민, 박승환, 김종재, 'PET 기판 위에 성장된 IZO 및 IZTO 박막의 투명전도 특성', 새물리, 46권, p. 332, 2003
  9. H. Hiramatsu, W. S. Seo, and K. Koumoto, 'Electrical and optical properties of radio- frequency-sputtered thin films of $(ZnO)_5In_2O_3$, Chem. Mater., Vol. 10, No. 10, p. 3033, 1998 https://doi.org/10.1021/cm980173b
  10. Y. Yan, S. J. Pennycook, J. Dai, R. P. H. Chang, A Wang, and T. J. Marks, 'Polytypoid structures in annealed $In_2O_3-ZnO$ films', Appl. Phys. Lett., Vol. 73, No. 18, p. 2585, 1998 https://doi.org/10.1063/1.122513
  11. J. K. Lee, H. M. Kim, S. H. Park, J. J. Kim, B. R. Rhee, and S. H. Sohn, 'Heat treatment effects on electrical and optical properties of ternary compound $In_2O_3-ZnO$ films', J. Appl. Phys., Vol. 92, No. 15, p. 5761, 2002 https://doi.org/10.1063/1.1511292
  12. E. Hanamura, 'Very large optical nonlinearity of semiconductor microcrystallites', Phys. Rev. B, Vol. 37, No. 3, p. 1273, 1988 https://doi.org/10.1103/PhysRevB.37.1273
  13. J. Tauc, 'Amorphous and Liquid Semi- conductors', Plenum, London, Vol. 17, No. 12, p. 952, 1974
  14. Cheung, J. T., 'Transparent and conductive zinc oxide film with low growth temperature', U. S. Patent, No. 6,458,673, 2002