• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.98-100
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2$/Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국표면공학회지
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• 제29권6호
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• pp.869-875
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• 1996

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1408-1411
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• 2009

This paper describes organic acid-based wet chemical etching behaviors of amorphous Ga-doped zinc oxide (GZO) thin film sputter-deposited at low temperature (room temperature). Wet etch parameters such as etching time, temperature, and etchant concentration are investigated for formic and citric acid etchants, and their effects on the etch rate, etch residue and the feature of edge line are compared.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.282.1-282.1
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.284-284
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.400-403
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• 2003

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.182-185
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• 2003

Etching characteristics of (PB,Sr)$TiO_3$(PST) thin films Were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture' lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 562 ${\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.