• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.363-368
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• 2009

In the paper, we confirmed improvement Noise figure of the entire RF front-end using spiral inductor with PGS(Patterned Ground Shield) and current bleeding techniques. LNA design is to achieve simultaneous noise and input matching. Spiral inductor in input circuit of LNA inserted PGS for betterment of Q-factor. we modeling inductor using EM simulator, so compared with inductor of TSMC 0.18um. We designed and simulation the optimum structure of PGS using Taguchi's method. We confirmed enhancement of noise figure at LNA after substituted for inductor with PGS. Mixer designed using current bleeding techniques for reduced noise. We designed LNA using inductor with PGS and Mixer using current bleeding techniques, so confirmed improvement of noise figure.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.5
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• pp.315-320
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• 2022

In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, double-layer spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. Compared to the conventional single-layer symmetrical inductor having an inductance of 3.9~4.2nH, the proposed double-layer symmetric spiral inductor has an inductance of 11~12nH in 0.3~1.2GHz frequency range, a quality factor of about 4.4 in 800MHz, and a self-resonant frequency of about 2.7~2.8GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.11
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• pp.617-624
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• 1999

The spiral type thin-film inductor performed in high frequency at 2-5[MHz] range is analyzed by 2-dimensional Finite Element Method(2D FEM). The features of micro thin-film inductor have complicated electromagnetic phenomenon such as skin effect, proximity effect and magnetic saturation. To develope miniatured magnetic device considering these features, it is important to predict the property of the thin film inductor according to design parameter. In this paper, we present the 2D FEM analysis for the spiral type thin film inductor. The characteristics of inductor from point of view of inductance, resistance and quality factor are studied according to design parameter and various pattern construction.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.5
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• pp.402-408
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• 2017

In this paper, we analyzed the frequency characteristics of hexagonal spiral thin-film inductor based on non-contact AC coupling for wireless signal transmission. We compared and analyzed the frequency characteristics of the rectangular spiral inductor and the hexagonal spiral inductor according to the number of turns, the line width and the line spacing of the conductor. Hexagonal spiral inductor has more number of turns to has the same inductance as rectangular spiral inductor, but the overall length of the conductors is shortened. This reduces the self inductance and increases the mutual inductance so that the overall inductance can have the same value. Also, since the overall length of the conductor is shortened and the magnetic resistance is reduced, the quality factor and the self-resonant frequency performance can be secured. The proposed hexagonal spiral thin-film inductor has the inductance of 3.54nH at 2GHz, the quality factor of max 14.00 at 5.0GHz and the self-resonant frequency at about 11.3GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.58-64
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• 2008

A 6Gbps 1:2 demultiplexer(DEMUX) IC using $0.18{\mu}m$ CMOS was designed and fabricated. For high speed performance current mode logic(CML) flipflop was used and inductive peaking technology was used so as to obtain higher speed than conventional Current mode logic flipflop. On-chip spiral inductor was designed to maximize the inductive peaking effect using stack structure. Total twelve inductors of $100{\mu}m^2$ area increase was used. The measurement was processed on wafer and 1:2 demultiplexer with and without micro stacked spiral inductors were compared. For 6Gbps data rate measurement, eye width was improved 7.27% and Jitter was improved 43% respectively. Power consumption was 76.8mW and eye height was 180mV at 6 Gbps

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.22-29
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• 2007

A 2.5Gb/s 2:1 multiplexer(MUX) IC using $0.18{\mu}m$ CMOS was designed and fabricated. Inductive peaking technology was used to improve the performance. On-chip micro spiral inductor was designed to maximize the inductive peaking effect without increasing the chip area much. The designed 4.7 nH micro-spiral inductor was $20\times20{\mu}m2$ in size. 2:1 MUX with and without micro spiral inductors were compared. The rise and fall time was improved more than 23% and 3% respectively using the micro spiral inductors for 1.25Gb/s signal. For 2.5 Gb/s signal, fall and rise time was improved 5.3% and 3.5% respectively. It consumed 61mW and voltage output swing was 1$180mV_{p-p}$ at 2.5Gb/s.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.260-264
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• 2003

It is possible to design the high performance, integration and low cost radio frequency components by using LTCC(Low Temperature Cofired Ceramic) technology. But there is a critical point to design the spiral inductor because of crosstalk effects. of the crosstalk effect of the spiral inductor are investigated using full-wave analysis of the FEM(Finite Element Method) in this paper. The results show that input power of the spiral inductor are coupled from 0.1% to 10% above 3GHz. Therefore, we should consider the crosstalk effects when we design the LTCC.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.153-157
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• 2006

본 논문에서는 SoC 공정에 적용 가능한 spiral 인덕터의 특성에 대해 다루었다. 일정한 크기의 인덕터에서 턴 수의 변화에 따른 인덕턴스와 Q-factor의 변화를 보았다. HFSS 프로그램을 사용하여 턴 수와 선로의 폭이 같은 조건하에서 사각형 구조와 팔각형 구조를 갖는 인덕터의 인덕턴스와 Q-factor의 ?냅? 계산하였다. 사각형 구조와 팔각형 구조 모두 선로 폭 보다는 턴 수가 증가할수록 인덕턴스가 증가하였다. 턴 수가 증가할수록 Q-factor의 값은 사각형 구조는 감소한 반면 팔각형 구조는 증가하였다. spiral과 실리콘 사이에 PGS(Patterned Ground Shield)를 삽입하여 인덕턴스 및 Q-factor의 변화를 비교 분석하였다. 그 결과 PGS의 사용으로 사각형 구조와 팔각형 구조에서 턴 수에 따라 Q-factor의 값이 구조에 따라 서로 다른 방향으로 증감하는 것을 확인할 수 있었다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.353-358
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• 2020

In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, a single-layered spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. The general spiral inductor shows a large difference in frequency-inductance characteristics, frequency-quality factor characteristics, and self-resonant frequency according to the standard of the port, while the proposed symmetric spiral inductor has an inductance of 2.7nH, a quality factor of about 7.86, and a self-resonant frequency of about 14.1GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small. However, it was confirmed that the mutual inductance decreased compared to the occupied area of the coil, resulting in a low inductance, and the resistance of the coil increased more than the increase in the inductance, and the quality factor was also lowered. In the future, it is expected that inductance and quality factor can be improved through a 2-layer symmetrical spiral structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.89-93
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• 2002

In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.