Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07a
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- Pages.89-93
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- 2002
Enhanced Parallel-Branch Spiral Inductors
병렬분기 방법을 이용한 박막 나선 인덕터의 특성 향상
Abstract
In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.