• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.206-207
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• 2005

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.495-497
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• 2014

Combining the quantum transport theory with new field of Spin Caloritronics, we investigate on the influence of thermal gradient on the magneto tunnel junction structure under various circumstances. The results indicate enhancement in performance of spintronic device is possible using thermal energy.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.77-78
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• 2012

• Journal of Magnetics
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• v.17 no.4
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• pp.261-264
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• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• Journal of Magnetics
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• v.7 no.3
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• pp.98-100
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• 2002

Tunnel magnetoresistive devices using an individual multi-walled carbon nanotube were fabricated and their low-temperature electrical transport propertiers were investigated. With the ferromagnetic Co electrodes, the multi-walled carbon nanotube exhibited hysteretic magnetoresistance curve at low temperatures. Depending on the temperature and the bias current, the magnetoresistance ratio can be as high as 16% at the temperature of 2.2 K. Such high magnetoresistance ratio indicates a long diffusion length of the multi-walled carbon nanotube.

• Journal of the Korean Society of Marine Environment & Safety
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• v.14 no.1
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• pp.39-43
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• 2008

It is generally recognized that monitering of bio-molecules, which are related to the ocean environment, becomes more important. So far, for the detection of the bio-molecules, ocean samples were brought to laboratory to be analyzed using a complicate and expensive measuring system The "ship and dip" method takes a relatively long time to complete a analysis cycle and causes significant errors due to the time difference between the analysis processes. In order to overcome the drawbacks, developments of sensors for the detection of bio-molecules were suggested using nano-technology, such as nano-spintronic device, carbon nano tube device, and nano-semiconductors. The pros and cons of the technology were examined and reinvestigated to overcome the technical problems in the application to real sensors.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.91-92
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• 2011

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.447-450
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• 2004

The modeling circuit becomes more important in developing various magnetic devices regarding the fact that the competitive architecture and circuitry should be developed simultaneously. In this paper, we introduce a modeling circuit for hysteresis characteristic of a magnetic device, which is a major characteristic in the spin dependent magnetic material. This transistor-level model is conspicuous in that it can be usefully embodied in real circuits rather than conventional SPICE models are only for simulations.

• Journal of Magnetics
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• v.10 no.2
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.