Effect of temperature gradient on junction magnetoresistance of magnetic tunnel junction devices

  • 노성철 (한국과학기술원 전기 및 전자공학과) ;
  • 박민규 (한국과학기술원 전기 및 전자공학과) ;
  • 이여름 (한국과학기술원 전기 및 전자공학과)
  • Published : 2014.03.21

Abstract

Combining the quantum transport theory with new field of Spin Caloritronics, we investigate on the influence of thermal gradient on the magneto tunnel junction structure under various circumstances. The results indicate enhancement in performance of spintronic device is possible using thermal energy.

Keywords