• Electronics and Telecommunications Trends
• /
• v.17 no.6 s.78
• /
• pp.127-134
• /
• 2002

정보통신 연구개발 사업인 우수신기술 지정 ·지원사업에 참여한 벤처기업 중 초기단계 벤처기업 75개사를 대상으로 대기업 및 중소기업으로부터 spin-off한 배태조직 벤처기업과 개인창업 벤처기업으로 분류하여 업종 및 벤처확인 유형별 특성, 재무 및 조직현황 특성, 최고경영자 특성, 기술개발 특성, 해외진출 특성을 분석하여 두 그룹간의 차이점 및 공통점을 파악한 후 향후 벤처기업의 나아갈 방향에 대해 제시해 보았다.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.188-189
• /
• 2002

One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1789-1791
• /
• 2007

We fabricated OTFT-OLED display panel by using Ag-paste for source and drains electrode of OTFTs. The OTFTs were fabricated by solution processes such as spin-coating for PVP gate dielectric and screen printing for S/D electrodes with Ag-paste, except pentacene active layer which was deposited by evaporation. The mobility was 0.024 cm2/V.sec , off state current ${\sim}10-11A$, threshold voltage 7.6 V and on/off current ratio ${\sim}105$. The panel consisted of 16 x 16 pixels and each pixel consisted of 2 OTFTs, 1 Capacitor and 1 OLED. The pixels successfully worked in terms of current magnitude supplied to OLED and the control ability of driving and switching OTFTs.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1150-1153
• /
• 2006

In this paper, we investigated the effect of solvent on electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs). The TIPS pentacene was spin coated by using chlorobenzene, p-xylene, chloroform and toluene as solvent. Fabricated OTFT with chlorobenzene showed field-effect mobility of $0.01\;cm^2/V{\cdot}s$, on/off ratio $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform the mobility was $5.8{\times}10^{-7}\;cm^2/Vs$, on/off ratio $1.1{\times}10^2$ and threshold voltage of 1.7 V.

• Journal of the military operations research society of Korea
• /
• v.32 no.1
• /
• pp.1-12
• /
• 2006

This study investigates key factors affecting the activity of defense technology transfer through the questionnaire survey in Korea. Defense R&D investment has played an important role in promoting the commercial technology development as well as the targeted defense sector through the spin-off mechanism as shown in many countries. Recognizing the importance of effective and efficient investment in defense technology development, the advanced countries in defense technology are trying to establish optimal technology transfer mechanism to maximize the effect of the invested R&D at the national level considering the idiosyncratic features of their own countries. Because the technology transfer mechanisms are very distinct from country to country, it is natural to question "what are the determinants of the effective and efficient technology transfer in Korea?" We tested 19 potential factors and identified 11 factors that are significantly important as the determinants of technology transfer. From the empirical findings, we discuss some policy implications to promote the technology transfer.

• Journal of Information Display
• /
• v.4 no.2
• /
• pp.1-6
• /
• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• Journal of Digital Convergence
• /
• v.19 no.8
• /
• pp.173-184
• /
• 2021

For the current organizations, retaining executive members is one of the most important functions of human resource management. Given that importance, although executives' mobility becomes prevalent, most prior studies tended to focus on involuntary turnover of executive members. To fill this gap, the current theoretical paper suggests a model of executive voluntary turnover, drawing on the lierature of employee mobility and entrepreneurship. First, running a new business as a CEO negatively affects prior-firm performance, but collaboration between two firms mitigate the negative association. Second, spin-off positively affects prior-firm performance, but this is weakened as spin-off firm performance decreases. Finally, moving to a competitor negatively, while moving to a collaborator positively affects prior-firm performance.

• Journal of Magnetics
• /
• v.11 no.1
• /
• pp.8-11
• /
• 2006

Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04b
• /
• pp.45-48
• /
• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.385-385
• /
• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.