• 전자공학회논문지D
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• 제35D권8호
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• pp.62-68
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• 1998

Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.491-496
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• 2010

The relaxation behavior of aligned electric dipoles in a mixed polymer of P2ANS with P(VDF-TrFE) is studied with optical second harmonic generation (SHG). In this work, a macroscopic noncentrosymmetry of the spin coated film was achieved by an electrical poling. The relaxation of induced polar order of nonlinear optic(NLO) chromophores after poling leads to an insufficient long-term stability of NLO properties. In this work, we develop a new technique to suppress such kind of dipole relaxation in a poled polymer. We found that the poled dipoles in a NLO polymer were effectively immobilized by the internal electric field created by a thermally annealed ferroelectric polymer. The long-term stability in a mixed system of NLO polymer/ferroelectric polymer was successively accomplished by a series of thermal treatments applied to the mixed polymer system at a temperature of $140^{\circ}C$ for at least 1hour after poling.

• 한국인쇄학회지
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• 제14권1호
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

• 한국응용과학기술학회지
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• 제19권4호
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• pp.335-338
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• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.247-250
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. We have fabricated organic thin film transistors(OTFTs) and discuss electrical characteristics of the devices. For the gate dielectric layer, OPTMER PC403 photoacryl(JSR Co.) was spin-coated and cured at 220$^{\circ}C$. Electrical characteristics of the device were investigated, where the photoacryl dielectric layer thickness and pentacene active layer thickness were about 0.6$\mu\textrm{m}$ and 800${\AA}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.335-338
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• 1998

Ferroelectric Sr$_2$(Nb,Ta)$_2$O$_{7}$ (SNTO) thin films were prepared by chemical solution deposition processes. SNTO thin films were spin-coated on Pt/Ti/SiO$_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. B site-rich impurity phase, i.e. [Sr(Nb,Ta)$_2$O$_{6}$], was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.s.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.122-125
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• 1995

Using metalorganic deposition technique, $La_2Ti_2O_{7}$ precursor solution was deposited on platinium coated SiO$_2$/SI(100) substrates by spin-coating process. Crystalline and crack-free films of ∼0.2$\mu\textrm{m}$ thickness were successfully fabricated on the above substrate from four different types of $La_2Ti_2O_{7}$ precursor solutions by proper heat treatment in the temperature range of $700^{\circ}C$∼$1200^{\circ}C$. Microstructure and X-ray diffraction analysis of $La_2Ti_2O_{7}$ thin film showed that the crystallization temperature and the preferred orientation of $La_2Ti_2O_{7}$ thin film were strongly dependent on the precursor used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.1.1-4
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• 1995

In this study, PLZT thin films in AFE region prepared by sol-gel processing were investigated. And PLZT stock solutions were spin-coated on ITO-glass. The PLZT thin films were annealed by RTA. Hysteresis curves, dielectric characteristics and optical transmittances were measured in order to investigates the characteristics far the thin films. The PLZT thin films were crystallized at 750$^{\circ}C$ for 5 mimutes by RTA and the rosette structure composed of perovskite observed in the thin films. In case La content was 2/90/10 antiferroelectric-ferroelectric phase boundary was 2/90/10 PLZT thin film, and its hysteresis curve was good for application of optical information storage.