• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.7B
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• pp.721-727
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• 2009

Wireless Sensor Networks(WSN) make use of low cost and energy constrained sensor nodes. Thus, reaching the successful execution of its tasks with low energy consumption is one of the most important issues. The limitation of existing hierarchical algorithms is that many times the data are transmitted to the opposite direction to the sink. In this paper, DDACM (Data Direction Aware Clustering Method) is proposed. In this method, the nearest node to the sink is elected as cluster head, and when its energy level reaches a threshold value, the cluster head is reelected. We also make a comparison with LEACH showing how this method can reduce the energy consumption minimizing the reverse direction data transmission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.265-271
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• 2003

Ferroelectric lanthanum-substituted Bi$_4$Ti$_3$O$_{12}$(BLT) thin films were fabricated by spin-coating onto a Pt/Ti/SiO$_2$/Si substrate by metalorganic decomposition technique. The grain size in BLT thin films were prepared with controlled by various drying process. The effect of grain size on the crystallization and ferroelectric properties were investigated by x-ray diffraction and field emission scanning electron microscope. The dependence of crystallization and electrical properties are related to the grain size in BLT thin films with different drying temperature. The remanent polarization of BLT thin film increases with the increasing grain size. The value of 2P$_{r}$ and E$_{c}$ of BLT thin film dried at 45$0^{\circ}C$ were 25.9 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm, respectively. The BLT thin film with larger grain size has better fatigue properties. The fatigue properties revealed that small grained film showed more degradation of switching charge than large grained films.lms.s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.105-113
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• 2004

MRAM uses magneto-resistance material as a storage element, which stores cell data as a polarization of spin in a free magnetic layer. This magneto-resistance material has hysteresis, asteroid curve at the thermal variation, and R-V characteristics for switching the data. Therefore, a macro-model which can reproduce these characteristics is required for MRAM simulation. We propose a macro-model of TMR (Tunneling Magneto Resistance) that can reproduce all of these characteristics on HSPICE. Also we propose a novel sensing scheme, which generates reference resistance having the medium value, ( $R_{H}$+ $R_{L}$)/2, for a wide range of applied voltage and present simulation results based on the HSPICE macro-model of MTJ that we have developed.d.d.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.603-610
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• 1991

An oxygen deficient perovskite (CaLa)(MgMn)O5.43, with the cubic unit cell parameter of 3.826$\AA$, was prepared 115$0^{\circ}C$ for 10 hrs under the ambient oxygen gas pressure. The average oxidation state of manganese was determined to be 3.86 by the iodometric titration, so that the perovskite could be formulated as (CaLa) ({{{{ { MgMn}`_{ chi } ^{II } }}{{{{ { Mn}`_{ y} ^{III } }}{{{{ { Mn}`_{1- chi -y } ^{IV } }})O5.43 (2x+y=0.14). From X-ray photoelectron spectroscopy, the manganese ions in the lattice are mostly tetravalent, but two paramagnetic configurations were observed in the EPR spectrum: One sharp isotropic signal with hyperfines (ΔH 50 G, g=1.997$\pm$0.002 and │A│=82(4)$\times$10-4 cm-1) and a broad isotropic one (ΔH 1600 G, g=1.994$\pm$0.002), those which correspond respectively to Mn(II) and Mn(IV) ions. According to the magnetic susceptibility measurement, it follows the Curie-Weiss law from 20 K up to room temperature with $\mu$eff=5.23 $\mu$B, which is relatively larger than spin-only value({{{{ { mu }`_{eff} ^{s.o } }}=4.04 $\mu$B) due to the effect of weak ferromagnetic coupling. Such a result is in accord with a theory of semicovalence exchange.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.408-411
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• 2018

We fabricated highly flexible Mn-doped $SnO_2$ (MTO)/Ag/MTO/polydimethylsiloxane (PDMS)/MTO multilayer transparent conducting films. To reduce refractive-index mismatching of the MTO/Ag/MTO/polyethylene terephthalate (PET), index-matching layers were inserted between the oxide-metal-oxide-structured films and the PET substrate. The PDMS layer was deposited by spin-coating after adjusting the mixing ratio of PDMS and hexane. We investigated the effects of the index-matching layer on the color and reflectance differences with different PDMS dilution ratios. As the dilution ratio increased from 1:100 to 1:130, the color difference increased slightly, while the reflectance difference decreased from 0.62 to 0.32. The MTO/Ag/MTO/PDMS/MTO film showed a transmittance of 87.18~87.68% at 550 nm. The highest value of the Haacke figure of merit was $47.54{\times}10^{-3}{\Omega}^{-1}$ for the dilution ratio of 1:130.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.668-673
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• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.134-135
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• 2006

$AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.

• Journal of Radiation Industry
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• v.9 no.2
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• pp.57-62
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• 2015

In this study, we fabricated effect of storage conditions on graft of polypropylene (PP) non-woven fabric induced by electron beam. The electron beam irradiations on PP non-woven fabric were carried out over a range of irradiation doses from 25 to 100 kGy to make free radicals on fabric surface. The radical measurement was established by electron spin resonance (ESR) for confirming the changes of the alkyl radical and peroxy radical according to effect of storage time, storage temperature and atmosphere. It was observed that the free radicals were increased with irradiation dose and decreased with storage time due to the continuous oxidation. However, the radical extinction was significantly delayed due to reduced mobility of radicals at extremely low temperature. The degree of graft based on the analysis of ESR was investigated. The conditions of graft reaction were set at a temperature: $60^{\circ}C$, reaction time: 6 hours and styrene monomer concentration: 20 wt%.