• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.195-204
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• 1990

본 논문에서는 컴퓨터를 근본으로 한 Deep Level Transient Spectroscopy (DLTS) 장치를 구성하고 이를 이용하여 P형 Si MOS 캐패시터의 Si- $SiO_{2}$ 계면상태를 측정하여 트랩의 활성화에너지와 포획단면적 그리고 계면트랩밀도를 조사하였다. 실리콘 band gap내에 연속적으로 분포하고 있는 계면트랩을 상세히 고찰하기 위해 quiescent 전압의 위치를 변화시키면서 0.1volt의 미소한 펄스를 MOS에 주입하여 그 각각이 분리된 트랩이라고 생각되는 매우 좁은 에너지 영역에서 나오는 DLTS신호를 측정하였다. 또한 quiescent 전압의 위치, 주입펄스전압의 진폭 그리고 rate window의 선택이 DLTS 신호에 미치는 영향 등을 조사하였다. 측정결과, 계면트랩의 활성화에너지는 가전자대로 부터 0.16-0.45eV이고 포획단면적은 1.3*$10^{-19}$~3.2*$10^{-15}$$cm^{2}$, 계면트랩밀도는 1.8*$10^{10}$ ~ 2.5*$10^{11}$$cm^{-2}$e$V^{-1}$로 측정되었다.

• Journal of Korean Institute of Industrial Engineers
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• v.25 no.2
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• pp.204-216
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• 1999

Failure physics and statistical lifetime analysis constitute the two extreme ends of the reliability engineering spectrum, and studies that relate failure mechanisms to failure distributions have been near non-existent. This paper is an attempt to stimulate interest to fill the gap between the two extremes and proposes an approach of combining them through i) developing a failure mechanism model, ii) generating failure times by Monte Carlo simulation with the model, iii) deriving the failure time distribution and evaluating the product reliability, and iv) improving the product reliability by the sensitivity analysis. An application of the proposed approach to the BGA(Ball Grid Array) surface mount package is also provided.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.337-340
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• 1999

Luminescence of bismuth activated CaS, CaS:Bi, prepared in sodium polysulfide is studied. Excitation spectrum of CaS:Bi shows a band at 350 nm due to the recombination process between holes in Na+Ca2+ and electrons in conduction bands, in addition to bands at 260 nm from band gap of CaS, and at 320 nm (1S0→1P1) and at 420 nm (1S0→3P1) from electronic energy transitions of Bi. Emission band at 450 nm is from 3P1→1S0 transition of Bi3+, bands at 500 nm and 580 nm correspond to recombinations of electron donors (Bi3+Ca2+ and VS2-) with acceptors (VCa2+ and Na+Ca2+). Emission band of 3P1→1S0 transition is shifted to longer wavelength from CaS:Bi to BaS:Bi, due to the increase of the Stokes shift by the decrease of the crystal field parameter from CaS:Bi to BaS:Bi.

• 중국학논총
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• no.66
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• pp.161-188
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• 2020

The purpose of this paper is to analyze the debate on the Lewisian turning point in China. Despite the heated debate and accumulating research results both inside and outside China, the results showed a very complex spectrum. Different results were presented depending on which criteria the researcher selected, which analytical tools were used, and which data were utilized. Territory of China is vast, and the differences in economic basement and development stages between regions are not only severe, but also the economic gap among areas in a region is big. Therefore, it is difficult to have a significant meaning in analyzing the Lewisian Turning Point China as a whole. In addition, China's industrial production and labor force structure remain very unbalanced. This can be said to be due to the fact that the allocation and relocation of labor force according to the stage of economic development has not been achieved reasonably, and so it confuses the task of determining whether the Lewis Turning Point has arrived of not.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.78-82
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• 2021

The Ga₂O₃ single crystal was grown through a floating zone method, and its structural and optical properties were instigated. It has a monoclinic crystal structure with a (100) crystal orientation and an optical band gap energy of 4.6 eV. It showed an average transmittance of 70% in the visible region. At room temperature, its photoluminescent spectrum showed three different peaks: the ultraviolet at 360 nm, the blue-green at 500 nm, and the red peaks at 700 nm. Especially, at liquid nitrogen temperature, the ultraviolet peak was optically active while the others were quenched.

• Journal of Broadcast Engineering
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• v.16 no.1
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• pp.14-22
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• 2011

The conventional satellite image fusion methods usually add the same amount of higher frequency components extracted from the panchromatic image to all the multispectral images. However, it is noted that each of multispectral images has different amount of overlap with the panchromatic image in terms of its spectrum, and also has different intensities. Thus giving the same amount of high frequency contents to all the spectral bands does not match with this observation, which causes color distortion in the fused image. In this paper, we propose a new wavelet-domain satellite image fusion algorithm that can compensate for these differences in intensity and spectrum overlap. For the compensation of intensity differences, we first estimate the high resolution multispectral images from P, considering the relative intensity ratios. For the compensation of the amount of spectral overlap, their wavelet coefficients are appended to the conventional wavelet-domain method where the coefficients for the addition is determined by the amount of spectrum overlap. Experiments are conducted for the IKONOS satellite images whose spectrums are well known, and the results show that the proposed algorithm gives higher PSNR and correlation coefficients compared to the conventional methods.

• The Journal of Korean Academy of Sensory Integration
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• v.21 no.3
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• pp.79-102
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• 2023

Objective : Autistic Spectrum Disorders(ASD) is a developmental disorder characterized by atypical sensory adaptation, communication problem, stereotyped behavior, and feeding disorders. The reasons for ASD feeding disorders are oral sensory motor, cognitive, behavioral, and social problems. Major symptoms include picky eating, selective eating, food refusal, food neophobia, limited food variety, and food aversion. ASD feeding disorders could be accompanied by various problems such as health and nutrition intake problems, feeding development, eating-related sociability, and family and caregiver stress. Feeding problems and disorders in ASD can present from birth. However, ASD is diagnosed by the age of 3, and there might be an appropriate treatment gap. Usually, symptoms of feeding disorders tend to decrease with age. However, the symptoms often remain, so early evaluation, intervention, and periodic checking are necessary. In this study, the general information about the feeding disorder characteristics of ASD, influencing factors, and intervention were described through a literature review. Conclusion : Sensory-based therapy and behavior-based therapies are generally used for feeding disorders in ASD. Sensory-based therapy is effective for food sensitivity and behavior-based therapy for food selection. As the symptoms of feeding disorders in ASD are diverse, a comprehensive approach includes play and participation, oral motor exercise, diet, and daily life. However, appropriate evaluation, intervention protocol, and guidelines for the treatment of feeding disorders in ASD are limited. Therefore, a complex approach based on a more systematic understanding is needed. Feeding rehabilitation specialists, such as occupational therapists, should provide appropriate evaluation and intervention.