• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.1-6
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• 2012

This paper presents the extraction and analysis of small-signal parameters of tunneling field-effect transistors (TFETs) by using TCAD device simulation. The channel lengths ($L_G$) of the simulated devices varies from 50 nm to 100 nm. The parameter extraction for TFETs have been performed by quasi-static small-signal model of conventional MOSFETs. The small-signal parameters of TFETs with different channel lengths were extracted according to gate bias voltage. The $L_G$-dependency of the effective gate resistance, transconductance, source-drain conductance, and gate capacitance are different with those of conventional MOSFET. The $f_T$ of TFETs is inverely proportional not to $L_G{^2}$ but to $L_G$.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.398-403
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• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.

• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.1
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• pp.23-29
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• 2013

In recent years, development of energy conversion systems using hydrogen as an energy source has been accelerated globally. Even though hydrogen is an environment-friendly energy source, safety and effectiveness issues in storage, transportation, and usage of hydrogen should be clearly resolved in every application. Therefore, sensors for detecting hydrogen leakage, especially for fuel cell electric vehicles, should be designed to have much higher resolution and accuracy in comparison with conventional gas sensors. In this study, we conducted to determine the design parameters for the semiconductor hydrogen sensor with optimized sensing conditions under the thermal distribution characteristic and thermal transfer characteristic. The heat generation study on power supply voltage was studied for correlation analysis of thermal energy according to the power supply voltage variation from 1.0 voltage to 10.0 voltage every 0.5 voltage. And we studied for the temperature coefficient of resistance with hydrogen sensor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Journal of Convergence for Information Technology
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• v.11 no.11
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• pp.159-165
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• 2021

A fin channel with a fin width of 20 nm and a gradually increased source/drain extension regions are fabricated on a bulk silicon wafer by using a three-dimensional selective oxidation. The detailed process steps to fabricate the proposed fin channel are explained. We are demonstrating their preliminary characteristics and properties compared with those of the conventional fin field effect transistor device (FinFET) and the bulk FinFET device via three-dimensional device simulation. Compared to control devices, the three-dimensional selective oxidation fin channel MOSFET shows a higher linear transconductance, larger drive current, and lower series resistance with nearly the same scaling-down characteristics.

• Computers and Concrete
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• v.30 no.1
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• pp.43-74
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• 2022

Machine learning technique is recently opening new opportunities to identify the complex shear transfer mechanisms of reinforced concrete (RC) beam members. This study employed 1224 shear test specimens to train decision tree-based machine learning (ML) programs, by which strong correlations between shear capacity of RC beams and key input parameters were affirmed. In addition, shear contributions of concrete and shear reinforcement (the so-called V_c and V_s) were identified by establishing three independent ML models trained under different strategies with various combinations of datasets. Detailed parametric studies were then conducted by utilizing the well-trained ML models. It appeared that the presence of shear reinforcement can make the predicted shear contribution from concrete in RC beams larger than the pure shear contribution of concrete due to the intervention effect between shear reinforcement and concrete. On the other hand, the size effect also brought a significant impact on the shear contribution of concrete (V_c), whereas, the addition of shear reinforcements can effectively mitigate the size effect. It was also found that concrete tends to be the primary source of shear resistance when shear span-depth ratio a/d<1.0 while shear reinforcements become the primary source of shear resistance when a/d>2.0.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.10
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• pp.33-46
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• 2015

In this paper, we predicts the analog and digital circuit performance of FinFETs that are scaled down following the ITRS(International technology roadmap for semiconductors). For accurate prediction of the circuit performance of scaled down devices, accurate parasitic resistance and capacitance analytical models are developed and their accuracies are within 2 % compared to 3D TCAD simulation results. The parasitic capacitance models are developed using conformal mapping, and the parasitic resistance models are enhanced to include the fin extension length($L_{ext}$) with respect to the default parasitic resistance model of BSIM-CMG. A new algorithm is developed to fit the DC characteristics of BSIM-CMG to the reference DC data. The proposed capacitance and resistance models are implemented inside BSIM-CMG to replace the default parasitic model, and SPICE simulations are performed to predict circuit performances such as $f_T$, $f_{MAX}$, ring oscillators and common source amplifier. Using the proposed parasitic capacitance and resistance model, the device and circuit performances are quantitatively predicted down to 5 nm FinFET transistors. As the FinFET technology scales, due to the improvement in both DC characteristics and the parasitic elements, the circuit performance will improve.

• Laser Solutions
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• v.6 no.1
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• pp.17-24
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• 2003

The purpose of this study is to evaluate thermal shock resistance and thermal shock fracture toughness for ATJ graphite. Thermal shock resistance and thermal shock fracture toughness of ATJ graphite are evaluated by using CO$_2$ laser irradiation technique. The laser heat source is irradiated at the center of specimens. Temperature distribution on the specimen surface is measured using the thermocouples of type K and C. SEM and radiographic images are used to observe the cracks which are formed at the thermal shock specimens.

• Proceedings of the Korea Concrete Institute Conference
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• 2004.05a
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• pp.608-611
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• 2004

As the use of various electronic equipments has been increased recently according to industrialization and information network establishment, concern about electromagnetic wave exposed environment has also been increased. Therefore, this study aims to verify electromagnetic wave absorbing effects of inorganic paint that is made of carbon, electro-conductive materials with regard to its physical characteristics, its electromagnetic wave absorbing rate through a mock-up test for proving its effects in the indoor condition. The results are as follows: The results of running tests on electromagnetic wave absorbing inorganic paints for checking their requirements as painting material such as adherence degree, resistance to fine crack, resistance to washing, alkali-resistance, discoloration-resistance, etc. show that inorganic paints have the physical characteristics meeting the requirements for painting materials. In addition, it shows that the electromagnetic wave absorbing effect, in line with the number of paintings and the thickness of paintings, secures $75\~89\%$ of efficiency. And the mock-up test shows that the electromagnetic wave absorbing effect inside building is directly proportional to the distance from the source of electromagnetic wave such as electronic equipments.