• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.287-287
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• 2009

The characteristics of slow wave structure employed for backward wave oscillators expected to be a high power microwave source are studied analytically and experimentary. The slow wave structure is a sinusoidally corrugated wall waveguide The dispersion relationn and transmitted characteristics for microwaves are measured in the air. There exist literatures on high efficiency of enhanced radiation from backward wave oscillators involving plasma studied experimentally.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.8-10
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• 1997

In recent years, the metal industry has become increasingly aware of an unwanted component in metal scrap-radioactive material. Worldwide, there have 38 instances where radioactive sources were unintentionally smelted in the course of recycling metal scrap. In some cases contaminated metal consumer products were distributed internationally. U.S. mill that have smelted a radioactive source face costs resulting from decontamination, waste disposal, and lost profits that range from 7 to 23 million U.S. dollars for each case. Despite radiation monitoring system does not provide 100% protection, POSCO has developed the system for the first time in the steel industry of KOREA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.177-181
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• 1995

Lead-acid battery is used widely as a power source in the automobile, industrial machines, folk lifts U.P.S etc. But this battery has man\ulcorner disadvantages such as heavy low energy density, environment problem etc. In this paper, we have studied the physicochemical and electrochemical properties of lead-acid battery positive plates with regard to the method of curing. It has been observed that curing conditions strongly influence electrode composition and electrchemical performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.180-183
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• 2000

Beginning with a brief introduction on near 100 nm or below CMOS devices, this paper addresses novel devices for future sub-100 nm CMOS. First, key issues such as gate materials, gate dielectric, source/drain, and channel in Si bulk CMOS devices are considered. CMOS devices with different channel doping and structure are introduced by explaining a figure of merit. Finally, novel device structures such as SOI, SiGe, and double-gate devices will be discussed for possible candidates for sub-100 nm CMOS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.190-193
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• 1995

MCFC has been investigated for the last half centry as an alternative energy source. The operating temperature of MCFC is 650$^{\circ}C$, so it is more efficient than ocher fuel cells, and it has needed no nob metal element for the electrodes. we investigated electrochemical characteristics of separator for MCFC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.22-24
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• 1995

The electrical conductivity of TiO$_2$doped ZnO was investigated by means of complex impedance measurement and voltage-current source and meaurement unit. The e1ectrical conductivity of TiO$_2$added ZnO was increased with increasing the concentration of TiO$_2$. The calculated relative dielectric constant was decreased with increasing the concentration of TiO$_2$. The increase of electrical conductivity seems to be the effect of TiO$_2$donor doping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.379-382
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• 2002

GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.353-353
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• 2010

본 논문에서는 소스와 드레인의 형성에 있어서 implantation 이 아닌 silicide를 형성시켜서 최고온도 $500^{\circ}C$가 넘지않는 저온공정을 실현하였고, silicon-on-insulator (SOI) 기판이 아닌 solid phase crystallization (SPC) 결정화 방법을 이용하여 결정화 시킨 SPC-TFT 기판을 사용하였다. Silicide 의 형성은 pt를 증착하여 furnace에서 열처리를 실시하여 형성하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.10-10
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• 2010

The solar cell energy is considered as a clean energy source in the world. However, because the output of solar cell is not constant, it needs to study the relationships of the DC voltage, the DC current and the DC power of the solar cell. This paper presents the solar cell output characteristics and the maximum power point of the solar cell under different irradiation conditions.