• E2M - 전기 전자와 첨단 소재
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• 제5권1호
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• pp.71-80
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• 1992

CdS박막을 5*$10^{-7}$Torr의 초기 진공하에서 CdS source 온도를 800~1100.deg.C로 하고 기판 온도를 100~200.deg.C로 하여 corning 7059 glass 기판위에 0.6~1.2.mu.m의 두께로 진공증착 방법으로 제조하였다. CdS soruce 온도와 기판온도가 증착된 CdS 박막의 미세구조와 결정구조 및 전기적, 광학적 성질에 미치는 영향을 알아 보았다. 기판을 가열하지 않은 경우는 source 온도가 증가할수록 전기비저항과 광투과도가 낮게 나타났다. Source 온도를 1100.deg.C로 고정하였을 경우 기판의 온도에 따라 전기비저항값과 광투과도값은 증가하였으며 optical band gap도 증가하였다. Soruce 온도가 1100.deg.C이고 기판온도가 190.deg.C일때 전기비저항값은 2*$10^{6}$ohm-cm였고 광투과도는 band gap 이상의 파장에서 80% 이상의 값을 가졌다. 증착된 CdS박막의 결정구조는 모두 hexagonal structure를 가지며 source 온도가 낮을수록 기판온도가 높을수록 C축으로 방향성있게 성장하였다.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.271-274
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• 2011

Screen-printed source and drain electrodes were used for a spin-coated and inkjet-processed zinc-tin oxide (ZTO) TFTs for the first time. Source and drain were silver nanoparticles. Channel length was patterned using screen printing technology. Different silver nanoinks and process parameters were tested to find optimal source and drain contacts Relatively good electrical properties of a screen-printed inkjet-processed oxide TFT were obtained as follows; a mobility of 1.20 $cm^2$/Vs, an on-off current ratio of $10^6$, a Vth of 5.4 V and a subthreshold swing of 1.5 V/dec.

• 산업기술연구
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• 제25권B호
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• pp.141-147
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• 2005

A target of this paper is to get some elementary experimental data on the energy harvesting using a piezoelectric material. A THUNDER series piezo material (TH7-R), which has been developed by NASA engineer is selected for this study. In order to provide a mechanical energy to the piezoelectric material, a mechanical motion vibrator and its driving electronics are designed. Using a simple PWM control, the excitation frequency of vibrating mechanical motion is varied. The generated electric power as a function of the excitation frequency is monitored and analyzed. This initial experiment shows a possible energy source using a piezoelectric material for the application to low-power consumed small electronic devices such as RFID, MEMS, and etc.

• 연구논문집
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• 통권30호
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• pp.147-157
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• 2000

The filtered vacuum arc source (FVAS), which is adopted by magnetic filtering methode to remove the macro-particle in vacuum arc plasma, was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were consisted of one permanent magnet, one magnetic yoke and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Graphite was used as the cathode material to coat the amorphic diamond film and its diameter was 80 mm. The amorphic diamond film attracts much attention due to its excellent mechanical, optical and tribological properties suitable for wide range of applications. The effects of solenoid magnet in plasma extraction were studied by computer simulation and experiment using Taguchi's method. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. Optimum deposition condition was obtained when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, and 5 A, respectively.

• 한국세라믹학회지
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• 제45권5호
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• pp.280-284
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• 2008

In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.199-199
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• 2008

이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

• 한국정밀공학회지
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• 제21권3호
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• pp.38-43
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• 2004

This paper describes the construction of a circular polariscope. Generally, a circular polariscope contains four optical elements and a light source. The first element following the light source is called the linear polarizer. It converts the ordinary light into plane-polarized light. The second element is a quarter wave plate which converts the plane-polarized light into circularly polarized light. Following the quarter wave plate, a specimen made of transparent photoelastic material is located in a loading device. The second quarter wave plate is set and the last element is the analyzer. These polarizing elements, two quarter wave plates and two linear polarizing filters, were purchased from the USA. Frames and other structures for holding polarizing filters were machined and assembled to be rotated. Light box, which includes four incandescent lamps and two sodium-vapor lamps, was made. In order to proof the function of the newly built polariscope, Tardy compensation test was applied to a rectangular shaped specimen made of poly-carbonate material (PSM 1). The error of the fringe constant, which was measured by the newly built polariscope, was within 4.4 percent compared to the standard value of this material. It is possible to make a good quality of polariscope if accurate polarizing filters will be used.

• Journal of Plant Biotechnology
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• 제2권1호
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• pp.13-19
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• 2000

Carbohydrates serve three different principal functions in the metabolism of plants. They are the primary products of energy fixation, they are important transport metabolites, and they are deposited as structural or storage compounds. Modification of carbohydrate metabolism therefore covers approaches to modify yield, to change sink/source relationships and thereby alter the ratio of harvestable material, and to improve the quality of crop plants. The scope of this article is to summarize research done at the Max-Planck-Institute related to the first two fields and to present in some detail what we learned, when we established a new carbohydrate storage form in potato.