Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The investigation of forming the n+ emitter layer for crystalline silicon solar cells

결정질 실리콘 태양전지의 n+ emitter층 형성에 관한 특성연구

  • Kwon, Hyuk-Yong (Green strategic energy research institute, sejong university) ;
  • Lee, Jae-Doo (Green strategic energy research institute, sejong university) ;
  • Kim, Min-Jung (Green strategic energy research institute, sejong university) ;
  • Lee, Soo-Hong (Green strategic energy research institute, sejong university)
  • 권혁용 (세종대학교 그린전략에너지연구소) ;
  • 이재두 (세종대학교 그린전략에너지연구소) ;
  • 김민정 (세종대학교 그린전략에너지연구소) ;
  • 이수홍 (세종대학교 그린전략에너지연구소)
  • Published : 2010.06.16
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Abstract

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

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